Sacrificial charge and the spectral resolution performance of the Chandra Advanced CCD Imaging Spectrometer

Soon after launch, the Advanced CCD Imaging Spectrometer (ACIS), one of the focal plane instruments on the Chandra X-ray Observatory, suffered radiation damage from exposure to soft protons during passages through the Earth's radiation belts. The ACIS team is continuing to study the properties of the damage with an emphasis on developing techniques to mitigate charge transfer inefficiency (CTI) and spectral resolution degradation. A post-facto CTI corrector has been developed which can effectively recover much of the lost resolution. Any further improvements in performance will require knowledge of the location and amount of sacrificial charge - charge deposited along the readout path of an event which fills electron traps and changes CTI. We report on efforts by the ACIS Instrument team to characterize which charge traps cause performance degradation and the properties of the sacrificial charge seen on-orbit. We also report on attempts to correct X-ray pulseheights for the presence of sacrificial charge.Comment: 9 pages, 7 figures to be published in Proc. SPIE 485

Single electron Sensitive Readout (SiSeRO) X-ray detectors: Technological progress and characterization

Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source-drain current is modulated by the transfer of charge into the internal gate. At Stanford, we have developed a readout module based on the drain current of the on-chip transistor to characterize the device. Characterization was performed for a number of prototype sensors with different device architectures, e.g. location of the internal gate, MOSFET polysilicon gate structure, and location of the trough in the internal gate with respect to the source and drain of the MOSFET (the trough is introduced to confine the charge in the internal gate). Using a buried-channel SiSeRO, we have achieved a charge/current conversion gain of >700 pA per electron, an equivalent noise charge (ENC) of around 6 electrons root mean square (RMS), and a full width half maximum (FWHM) of approximately 140 eV at 5.9 keV at a readout speed of 625 Kpixel/s. In this paper, we discuss the SiSeRO working principle, the readout module developed at Stanford, and the characterization test results of the SiSeRO prototypes. We also discuss the potential to implement Repetitive Non-Destructive Readout (RNDR) with these devices and the preliminary results which can in principle yield sub-electron ENC performance. Additional measurements and detailed device simulations will be essential to mature the SiSeRO technology. However, this new device class presents an exciting technology for next generation astronomical X-ray telescopes requiring fast, low-noise, radiation hard megapixel imagers with moderate spectroscopic resolution.Comment: To appear in SPIE Proceedings of Astronomical Telescopes + Instrumentation, 202

The high-speed X-ray camera on AXIS

AXIS is a Probe-class mission concept that will provide high-throughput, high-spatial-resolution X-ray spectral imaging, enabling transformative studies of high-energy astrophysical phenomena. To take advantage of the advanced optics and avoid photon pile-up, the AXIS focal plane requires detectors with readout rates at least 20 times faster than previous soft X-ray imaging spectrometers flying aboard missions such as Chandra and Suzaku, while retaining the low noise, excellent spectral performance, and low power requirements of those instruments. We present the design of the AXIS high-speed X-ray camera, which baselines large-format MIT Lincoln Laboratory CCDs employing low-noise pJFET output amplifiers and a single-layer polysilicon gate structure that allows fast, low-power clocking. These detectors are combined with an integrated high-speed, low-noise ASIC readout chip from Stanford University that provides better performance than conventional discrete solutions at a fraction of their power consumption and footprint. Our complementary front-end electronics concept employs state of the art digital video waveform capture and advanced signal processing to deliver low noise at high speed. We review the current performance of this technology, highlighting recent improvements on prototype devices that achieve excellent noise characteristics at the required readout rate. We present measurements of the CCD spectral response across the AXIS energy band, augmenting lab measurements with detector simulations that help us understand sources of charge loss and evaluate the quality of the CCD backside passivation technique. We show that our technology is on a path that will meet our requirements and enable AXIS to achieve world-class science.Comment: 17 pages, 11 figures, submitted to Proceedings of SPIE Optics + Photonics 202

NICER and Fermi GBM Observations of the First Galactic Ultraluminous X-Ray Pulsar Swift J0243.6+6124

Swift J0243.6+6124 is a newly discovered Galactic Be/X-ray binary, revealed in late 2017 September in a giant outburst with a peak luminosity of 2 × 10[superscript 39](d/7 kpc)[superscript 2] erg s[superscript -1] (0.1-10 keV), with no formerly reported activity. At this luminosity, Swift J0243.6+6124 is the first known galactic ultraluminous X-ray pulsar. We describe Neutron star Interior Composition Explorer (NICER) and Fermi Gamma-ray Burst Monitor (GBM) timing and spectral analyses for this source. A new orbital ephemeris is obtained for the binary system using spin frequencies measured with GBM and 15-50 keV fluxes measured with the Neil Gehrels Swift Observatory Burst Alert Telescope to model the system's intrinsic spin-up. Power spectra measured with NICER show considerable evolution with luminosity, including a quasi-periodic oscillation near 50 mHz that is omnipresent at low luminosity and has an evolving central frequency. Pulse profiles measured over the combined 0.2-100 keV range show complex evolution that is both luminosity and energy dependent. Near the critical luminosity of L ∼ 10[superscript 38] erg s[superscript -1], the pulse profiles transition from single peaked to double peaked, the pulsed fraction reaches a minimum in all energy bands, and the hardness ratios in both NICER and GBM show a turnover to softening as the intensity increases. This behavior repeats as the outburst rises and fades, indicating two distinct accretion regimes. These two regimes are suggestive of the accretion structure on the neutron star surface transitioning from a Coulomb collisional stopping mechanism at lower luminosities to a radiation-dominated stopping mechanism at higher luminosities. This is the highest observed (to date) value of the critical luminosity, suggesting a magnetic field of B ∼ 10[superscript 13] G.United States. National Aeronautics and Space Administratio

New CTI Correction Method for the Spaced-Row Charge Injection of the Suzaku X-Ray Imaging Spectrometer

The charge transfer inefficiency (CTI) of the X-ray CCDs on board the Suzaku satellite (X-ray Imaging Spectrometers; XIS) has increased since the launch due to radiation damage, and the energy resolution has been degraded. To improve the CTI, we have applied a spaced-row charge injection (SCI) technique to the XIS in orbit; by injecting charges into CCD rows periodically, the CTI is actively decreased. The CTI in the SCI mode depends on the distance between a signal charge and a preceding injected row, and the pulse height shows periodic positional variations. Using in-flight data of onboard calibration sources and of the strong iron line from the Perseus cluster of galaxies, we studied the variation in detail. We developed a new method to correct the variation. By applying the new method, the energy resolution (FWHM) at 5.9 keV at March 2008 is ~155 eV for the front-illuminated CCDs and ~175 eV for the back-illuminated CCD.Comment: 7 pages, 14 figure

Tests With Soft X-rays of an Improved Monolithic SOI Active Pixel Sensor

We have been developing monolithic active pixel sensors with 0.2 μm Silicon-On-Insulator (SOI) CMOS technology, called SOIPIX, for high-speed wide-band X-ray imaging spectroscopy on future astronomical satellites. In this work, we investigate a revised chip (XRPIX1b) for soft X-rays used in frontside illumination. The Al Kα line at 1.5 keV is successfully detected and energy resolution of 188 eV (FWHM) is achieved from a single pixel at this energy. The responsivity is improved to 6 μV/electron and the readout noise is 18 electrons rms. Data from 3 ×3 pixels irradiated with 6.4 keV (Fe Kα) X-rays demonstrates that the circuitry crosstalk between adjacent pixels is less than 0.5%