Electrical and optical characterisation of low temperature grown InGaAs for photodiode applications

Dilute bismide and nitride alloys are promising semiconductors for bandgap engineering, opening additional design freedom for devices such as infrared photodiodes. Low growth temperatures are required to incorporate bismuth or nitrogen into III V semiconductors. However, the effects of low growth temperature on dark current and responsivity are not well understood. In this work, a set of InGaAs p i n wafers were grown at a constant temperature of 250, 300, 400 and 500 °C for all p, i and n layers. A second set of wafers was grown where the p and n layers were grown at 500 °C while the i-layers were grown at 250, 300 and 400 °C. Photodiodes were fabricated from all seven wafers. When constant growth temperature was employed (for all p, i and n layers), we observed that photodiodes grown at 500 °C show dark current density at 1 V that is 6 orders of magnitude lower while the responsivity at an illumination wavelength of 1520 nm is 4.5 times higher than those from photodiodes grown at 250 °C. Results from the second set of wafers suggest that performance degradation can be recovered by growing the p and n layers at high temperature. For instance, comparing photodiodes with i-layers grown at 250 °C, photodiodes showed dark current density at -1 V that is 5 orders of magnitude lower when the p and n layer were grown at 500 °C. Postgrowth annealing, at 595 °C for 15 minutes, on the two wafers grown at 250 and 300 °C showed recovery of diode responsivity but no significant improvement in the dark current. Our work suggests that growth of the cap layer at high temperature is necessary to maintain the responsivity and minimise the dark current degradation, offering a pathway to developing novel photodiode materials that necessitate low growth temperatures

Few-photon detection using InAs avalanche photodiodes

An avalanche photodiode with a ratio of hole-to-electron ionization coefficients, k = 0, is known to produce negligible excess noise irrespective of the avalanche gain. The low noise amplification process can be utilized to detect very low light levels. In this work, we demonstrated InAs avalanche photodiodes with high external quantum efficiency of 60% (achieved without antireflection coating) at the peak wavelength of 3.48 µm. At 77 K, our InAs avalanche photodiodes show low dark current (limited by 300 K blackbody background radiation), high avalanche gain and negligible excess noise, as InAs exhibits k = 0. They were therefore able to detect very low levels of light, at 15-31 photons per 50 µs laser pulse at 1550 nm wavelength. These correspond to the lowest detected average power by InAs avalanche photodiodes, ranging from 19 to 40 fW. The measurement system’s noise floor was dominated by the pre-amplifier. Our results suggest that, with a lower system noise, InAs avalanche photodiodes have high potential for optical detection of single or few-photon signal levels at wavelengths of 1550 nm or longer

Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP

The electron and hole avalanche multiplication characteristics have been measured in bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes, lattice matched to InP, with nominal avalanche region thicknesses of ~0.6 μm, 1.0 μm and 1.5 μm. From these and data from two much thinner devices, the bulk electron and hole impact ionization coefficients (α and β respectively), have been determined over an electric-field range from 220-1250 kV/cm for α and from 360-1250 kV/cm for β for the first time. The α/β ratio is found to vary from 1000 to 2 over this field range, making it the first report of a wide band-gap III-V semiconductor with ionization coefficient ratios similar to or larger than that observed in silicon

Serotonergic treatment normalizes midbrain dopaminergic neuron increase after periaqueductal gray stimulation-induced anticipatory fear in a rat mode

Background: Electrical stimulation of the dorsolateral periaqueductal gray (dlPAG) in rats has been shown to elicit panic-like behaviour and can be a useful tool for modelling anticipatory fear and agoraphobia. Methods: In this study, we further analysed our previous data on the effects of escitalopram (a selective serotonin reuptake inhibitor, SSRI) and buspirone (a 5-HT1A receptor partial agonist) on dlPAG-induced anticipatory fear behaviour in a rat model using freezing as a measure. We then used tyrosine hydroxylase (TH) immunohistochemistry to probe the effects on dopaminergic neurons. Results: Although acute treatment of escitalopram, but not buspirone, was effective in reducing anticipatory freezing behaviour, chronic administrations of both drugs were comparably effective. We found that the number of dopaminergic neurons in the ventral tegmental area (VTA) was lowered in both chronic buspirone and escitalopram groups. We showed a strong correlation between the number of dopaminergic neurons and freezing in the VTA. We further showed positive correlations between dopaminergic neurons in the VTA and substantia nigra pars compacta in escitalopram and buspirone groups, respectively. Limitations: Although our data strongly hint to a role of dopaminergic mechanisms in the dlPAG induced fear response, more in-depth studies with larger sample sizes are needed to understand the neuronal mechanisms underlying the interactions between serotonergic drugs and dopaminergic cell number and fear behavior. Conclusion: Chronic treatment with an SSRI and a 5-HT1A agonist decrease the number of dopaminergic neurons in the VTA. These effects seem to be associated with reduced dlPAG-induced anticipatory freezing behaviour

Formal inverse integrating factors and the nilpotent center problem

We are interested in deepening knowledge of methods based on formal power series applied to the nilpotent center problem of planar local analytic monodromic vector fields X. As formal integrability is not enough to characterize such a centers we use a more general object, namely, formal inverse integrating factors V of X. Although by the existence of V is not possible to describe all nilpotent centers strata, we simplify, improve and also extend previous results on the relationship between these concepts. We use in the performed analysis the so-called Andreev number n N with n > 2 associated to X which is invariant under orbital conjugacy of X. Besides the leading terms in the (1,n)-quasihomogeneous expansions that V can have we also prove the following: (i) If n is even and there exists V then X has a center; (iii) If the existence of V characterizes all the centers; (iii) If there is a V with minimum ``vanishing multiplicity' at the singularity then, generically, X has a center.The author is partially supported by a MINECO grant number MTM2014-53703-P and by a CIRIT grant number 2014 SGR 1204

Liberating Efimov physics from three dimensions

When two particles attract via a resonant short-range interaction, three particles always form an infinite tower of bound states characterized by a discrete scaling symmetry. It has been considered that this Efimov effect exists only in three dimensions. Here we review how the Efimov physics can be liberated from three dimensions by considering two-body and three-body interactions in mixed dimensions and four-body interaction in one dimension. In such new systems, intriguing phenomena appear, such as confinement-induced Efimov effect, Bose-Fermi crossover in Efimov spectrum, and formation of interlayer Efimov trimers. Some of them are observable in ultracold atom experiments and we believe that this study significantly broadens our horizons of universal Efimov physics.Comment: 17 pages, 5 figures, contribution to a special issue of Few-Body Systems devoted to Efimov Physic

Valence band engineering of GaAsBi for low noise avalanche photodiodes

Avalanche Photodiodes (APDs) are key semiconductor components that amplify weak optical signals via the impact ionization process, but this process’ stochastic nature introduces ‘excess’ noise, limiting the useful signal to noise ratio (or sensitivity) that is practically achievable. The APD material’s electron and hole ionization coefficients (α and β respectively) are critical parameters in this regard, with very disparate values of α and β necessary to minimize this excess noise. Here, the analysis of thirteen complementary p-i-n/n-i-p diodes shows that alloying GaAs with ≤ 5.1 % Bi dramatically reduces β while leaving α virtually unchanged—enabling a 2 to 100-fold enhancement of the GaAs α/β ratio while extending the wavelength beyond 1.1 µm. Such a dramatic change in only β is unseen in any other dilute alloy and is attributed to the Bi-induced increase of the spin-orbit splitting energy (∆so). Valence band engineering in this way offers an attractive route to enable low noise semiconductor APDs to be developed

Measuring Black Hole Spin using X-ray Reflection Spectroscopy

I review the current status of X-ray reflection (a.k.a. broad iron line) based black hole spin measurements. This is a powerful technique that allows us to measure robust black hole spins across the mass range, from the stellar-mass black holes in X-ray binaries to the supermassive black holes in active galactic nuclei. After describing the basic assumptions of this approach, I lay out the detailed methodology focusing on "best practices" that have been found necessary to obtain robust results. Reflecting my own biases, this review is slanted towards a discussion of supermassive black hole (SMBH) spin in active galactic nuclei (AGN). Pulling together all of the available XMM-Newton and Suzaku results from the literature that satisfy objective quality control criteria, it is clear that a large fraction of SMBHs are rapidly-spinning, although there are tentative hints of a more slowly spinning population at high (M>5*10^7Msun) and low (M<2*10^6Msun) mass. I also engage in a brief review of the spins of stellar-mass black holes in X-ray binaries. In general, reflection-based and continuum-fitting based spin measures are in agreement, although there remain two objects (GROJ1655-40 and 4U1543-475) for which that is not true. I end this review by discussing the exciting frontier of relativistic reverberation, particularly the discovery of broad iron line reverberation in XMM-Newton data for the Seyfert galaxies NGC4151, NGC7314 and MCG-5-23-16. As well as confirming the basic paradigm of relativistic disk reflection, this detection of reverberation demonstrates that future large-area X-ray observatories such as LOFT will make tremendous progress in studies of strong gravity using relativistic reverberation in AGN.Comment: 19 pages. To appear in proceedings of the ISSI-Bern workshop on "The Physics of Accretion onto Black Holes" (8-12 Oct 2012). Revised version adds a missing source to Table 1 and Fig.6 (IRAS13224-3809) and corrects the referencing of the discovery of soft lags in 1H0707-495 (which were in fact first reported in Fabian et al. 2009

Aggregate structure of hydroxyproline-rich glycoprotein (HRGP) and HRGP assisted dispersion of carbon nanotubes

Hydroxyproline-rich glycoproteins (HRGP) comprise a super-family of extracellular structural glycoproteins whose precise roles in plant cell wall assembly and functioning remain to be elucidated. However, their extended structure and repetitive block co-polymer character of HRGPs may mediate their self-assembly as wall scaffolds by like-with-like alignment of their hydrophobic peptide and hydrophilic glycopeptide modules. Intermolecular crosslinking further stabilizes the scaffold. Thus the design of HRGP-based scaffolds may have practical applications in bionanotechnology and medicine. As a first step, we have used single-molecule or single-aggregate atomic force microscopy (AFM) to visualize the structure of YK20, an amphiphilic HRGP comprised entirely of 20 tandem repeats of: Ser-Hyp4-Ser-Hyp-Ser-Hyp4-Tyr-Tyr-Tyr-Lys. YK20 formed tightly aggregated coils at low ionic strength, but networks of entangled chains with a porosity of ~0.5–3 μm at higher ionic strength. As a second step we have begun to design HRGP-carbon nanotube composites. Single-walled carbon nanotubes (SWNTs) can be considered as seamless cylinders rolled up from graphene sheets. These unique all-carbon structures have extraordinary aromatic and hydrophobic properties and form aggregated bundles due to strong inter-tube van der Waals interactions. Sonicating aggregated SWNT bundles with aqueous YK20 solubilized them presumably by interaction with the repetitive, hydrophobic, Tyr-rich peptide modules of YK20 with retention of the extended polyproline-II character. This may allow YK20 to form extended structures that could potentially be used as scaffolds for site-directed assembly of nanomaterials

Tomato: a crop species amenable to improvement by cellular and molecular methods

Tomato is a crop plant with a relatively small DNA content per haploid genome and a well developed genetics. Plant regeneration from explants and protoplasts is feasable which led to the development of efficient transformation procedures. In view of the current data, the isolation of useful mutants at the cellular level probably will be of limited value in the genetic improvement of tomato. Protoplast fusion may lead to novel combinations of organelle and nuclear DNA (cybrids), whereas this technique also provides a means of introducing genetic information from alien species into tomato. Important developments have come from molecular approaches. Following the construction of an RFLP map, these RFLP markers can be used in tomato to tag quantitative traits bred in from related species. Both RFLP's and transposons are in the process of being used to clone desired genes for which no gene products are known. Cloned genes can be introduced and potentially improve specific properties of tomato especially those controlled by single genes. Recent results suggest that, in principle, phenotypic mutants can be created for cloned and characterized genes and will prove their value in further improving the cultivated tomato.