Synthesis and down conversion emission property of Eu3+ doped LaAlO3 CsAlO2 and LiLaO2 phosphors

[EN] LaAlO3:Eu3+, CsAlO2:Eu3+ and LiLaO2:Eu3+ phosphors with varying concen- trations of Eu3+ from 3 to 10 mol% were prepared by combustion synthesis method and the samples were further heated to 1,000ºC to improve the crystallinity of the materials. The structure and morphology of materials have been examined by X-ray diffraction and scan- ning electron microscopy. SEM images depicted that the morphology of crystallites have no uniform shapes and sizes. Small and coagulated particles of irregular shapes of different sizes are obtained. The characteristic emissions of Eu3+ were clearly observed at nearly 580, 592, 650, 682 to 709 (multiplet structure) nm for 5D - 7 Fn transitions where n = 0, 1, 3, 4 respectively, including the strongest emission peaks at 614 and 620 nm for 5 D0 - 7 F2 transitions in CsAlO2:Eu3+ and LiLaO2:Eu3+ host lattices. The intensity of emission peak corresponding to 5 D0 !→ 7 F1 transitions in LaAlO3 :Eu3+ material is comparable to that of 5D0 5D-7F2 transitions which is also a singlet. Photoluminescence intensity follows the order as in LiLaO2 > LaAlO3 > CsAlO2 lattices. Remarkable high photoluminescence intensity with 7 mol% doping of Eu3+ in LiLaO2 makes it a strong contender for red colored display applications.This work was supported by the European Commission through Nano CIS project (FP7-PEOPLE-2010-IRSES ref. 269279).Marí Soucase, B.; Singh, KC.; Moya Forero, MM.; Singh, I.; Om, H.; Chand, S. (2015). Synthesis and down conversion emission property of Eu3+ doped LaAlO3 CsAlO2 and LiLaO2 phosphors. Optical and Quantum Electronics. 47(7):1569-1578. https://doi.org/10.1007/s11082-014-9997-9S15691578477Abbattista, F., Vallino, M.: Remarks on the $$\text{La}_{2}\text{O}_{3}-\text{Li}_{2}\text{O}$$ La 2 O 3 - Li 2 O binary system between 750 and 1,000  $$^{\circ}$$ ∘ C. Ceram. 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Vacuum ultraviolet excitation of rare-earth ion luminescence in strontium fluoride crystals

The photoexcitation spectra (70-280 nm) of the Eu 3+, Tb 3+, Dy 3+, Er 3+, and Tm 3+ ion luminescence in strontium fluoride crystals are studied at 8 and 295 K by vacuum ultraviolet spectroscopy using synchrotron-radiation excitation. The processes of transfer of the excitation energy to the impurity centers as well as the relaxation mechanisms of the excited high-energy states of the rare-earth ions are analyzed. The bands corresponding to the interconfiguration 4f-5d transitions and the charge-transfer bands are identified in the photoexcitation luminescence spectra. ©2005 Springer Science+Business Media, Inc.The present work was supported in part by the Russian Foundation for Basic Research (Grant 05-02-16530), by the Program “Russian Universities” (Grant UR.02.01.433), by REC-005 (ЕК-005-XI), and BMBF (05KS8GMD/1)

Time-resolved vacuum ultraviolet spectroscopy of Er3+Er3^+ ions in the SrF2SrF_2 crystals

The photoluminescence and photoexcitation spectra as well as the luminescence decay kinetics of Er3+ ions in the visible ultraviolet and vacuum ultraviolet (VUV) regions have been studied by the method of low-temperature, time-resolved VUV-spectroscopy on excitation by synchrotron radiation. In the VUV spectral region of the luminescence of SrF2:1% Er3+, the 146.5-nm band with a time of decay of less than 0.6 nsec was revealed together with the well-known emission band at 164.3 nm (decay constant in the microsecond range). Its possible nature is discussed. The specific features of the formation of photoexcitation spectra of the f-f and f-d transitions in the Er3+ ion are considered. Competition between the processes of excitation of f-f and d-f luminescence has been revealed. It manifests itself in the inverse relationship of their photoexcitation spectra in a range of energies of incident photons that are close to the position of the 4fn-15d configuration levels. © 2005 Springer Science+Business Media, Inc.This work was carried out with the support of grants from the Russian Fundamental Research Foundation (05-02-16530), "Universities of Russia (UR 02.01.433), Ural Scientific Center Promising Materials" CRDF (EK-005-XI), and partially from BMBF (05KS8GMD/1)

Unraveling Crystal Growth in GeSb Phase-Change Films in between the Glass-Transition and Melting Temperatures

The study of crystal growth in phase-change thin films is of crucial importance to improve our understanding of the extraordinary phase transformation kinetics of these materials excellently suited for data storage applications. Here, we developed and used a new method, based on isothermal heating using laser illumination in combination with a high-speed optical camera, to measure the crystal growth rates, in a direct manner over 6 orders of magnitude, in phase-change thin films composed of several GeSb alloys. For Ge8Sb92 and Ge9Sb91, a clear non-Arrhenius temperature dependence for crystal growth was found that is described well on the basis of a viscosity model incorporating the fragility of the supercooled liquid as an important parameter. Using this model, the crystal growth rate can be described for the whole range between the glass transition temperature of about 380 K and the melting temperature of 880 K, excellently explaining that these phase-change materials show unique and remarkable behavior that they combine extremely low crystal growth rates at temperatures below 380 K required for 10 years of data retention and very fast growth rates of 15 m s(-1) at temperatures near the melting point required for bit switching within tens of nanoseconds