Coherent exciton transport in semiconductors

We review the topic of Bose-Einstein condensation of excitons in semiconductors, focusing on the signatures of the macroscopic order of the exciton condensate.Comment: Some references were updated with respect to the published version. appears as Chapter 19 in Novel Superfluids Volume 2, edited by K. H. Bennemann and J. B. Ketterson, International Series of Monographs on Physics no. 157, pages 423-474 (Oxford University Press, Oxford, 2014

The LISA Time-Delay Interferometry Zero-Signal Solution. I: Geometrical Properties

Time-Delay Interferometry (TDI) is the data processing technique needed for generating interferometric combinations of data measured by the multiple Doppler readouts available onboard the three LISA spacecraft. Within the space of all possible interferometric combinations TDI can generate, we have derived a specific combination that has zero-response to the gravitational wave signal, and called it the {\it Zero-Signal Solution} (ZSS). This is a two-parameter family of linear combinations of the generators of the TDI space, and its response to a gravitational wave becomes null when these two parameters coincide with the values of the angles of the source location in the sky. Remarkably, the ZSS does not rely on any assumptions about the gravitational waveform, and in fact it works for waveforms of any kind. Our approach is analogous to the data analysis method introduced by G\"ursel & Tinto in the context of networks of Earth-based, wide-band, interferometric gravitational wave detectors observing in coincidence a gravitational wave burst. The ZSS should be regarded as an application of the G\"ursel & Tinto method to the LISA data.Comment: 29 pages, 17 Figure

Thermoelectric properties of junctions between metal and strongly correlated semiconductor

We propose a junction of metal and rare-earth compound semiconductor as the basis for a possible efficient low-temperature thermoelectric device. If an overlayer of rare earth atoms differing from the bulk is placed at the interface, very high values of the figure of merit ZT can be reached at low temperature. This is due to sharp variation of the transmission coefficient of carriers across the junction at a narrow energy range, which is intrinsically linked to the localized character of the overlayer f-orbital.Comment: RevTeX 3.0, 4 pages, 3 postscript figures. To be published in Applied Physics Letter

Predictions of short-term rates and the expectations hypothesis of the term structure of interest rates

Despite its important role in monetary policy and finance, the expectations hypothesis (EH) of the term structure of interest rates has received virtually no empirical support. The empirical failure of the EH was attributed to a variety of econometric biases associated with the single-equation models used to test it; however, none account for it. This paper analyzes the EH by focusing on its fundamental tenet - the predictability of the short-term rate. This is done by comparing h-month ahead forecasts for the 1- and 3-month Treasury yields implied by the EH with the forecasts from random-walk, Diebold and Lei (2006), and Duffee (2002) models. The evidence suggests that the failure of the EH is likely a consequence of market participants’ inability to predict the short-term rate. JEL Classification: E40, E52expectations theory, random walk, time-varying risk premium

Disorder-induced superfluidity

We use quantum Monte Carlo simulations to study the phase diagram of hard-core bosons with short-ranged {\it attractive} interactions, in the presence of uniform diagonal disorder. It is shown that moderate disorder stabilizes a glassy superfluid phase in a range of values of the attractive interaction for which the system is a Mott insulator, in the absence of disorder. A transition to an insulating Bose glass phase occurs as the strength of the disorder or interactions increases.Comment: 5 pages, 6 figure

Scalable Atomistic Simulations of Quantum Electron Transport using Empirical Pseudopotentials

The simulation of charge transport in ultra-scaled electronic devices requires the knowledge of the atomic configuration and the associated potential. Such "atomistic" device simulation is most commonly handled using a tight-binding approach based on a basis-set of localized orbitals. Here, in contrast to this widely used tight-binding approach, we formulate the problem using a highly accurate plane-wave representation of the atomic (pseudo)-potentials. We develop a new approach that separately deals with the intrinsic Hamiltonian, containing the potential due to the atomic configuration, and the extrinsic Hamiltonian, related to the external potential. We realize efficient performance by implementing a finite-element like partition-of-unity approach combining linear shape functions with Bloch-wave enhancement functions. We match the performance of previous tight-binding approaches, while retaining the benefits of a plane wave based model. We present the details of our model and its implementation in a full-fledged self-consistent ballistic quantum transport solver. We demonstrate our implementation by simulating the electronic transport and device characteristics of a graphene nanoribbon transistor containing more than 2000 atoms. We analyze the accuracy, numerical efficiency and scalability of our approach. We are able to speed up calculations by a factor of 100 compared to previous methods based on plane waves and envelope functions. Furthermore, our reduced basis-set results in a significant reduction of the required memory budget, which enables devices with thousands of atoms to be simulated on a personal computer