Observation of thermally activated glassiness and memory dip in a-NbSi insulating thin films

We present electrical conductance measurements on amorphous NbSi insulating thin films. These films display out-of equilibrium electronic features that are markedly different from what has been reported so far in disordered insulators. Like in the most studied systems (indium oxide and granular Al films), a slow relaxation of the conductance is observed after a quench to liquid helium temperature which gives rise to the growth of a memory dip in MOSFET devices. But unlike in these systems, this memory dip and the related conductance relaxations are still visible up to room temperature, with clear signatures of a temperature dependent dynamics

Spin injection in Silicon at zero magnetic field

In this letter, we show efficient electrical spin injection into a SiGe based \textit{p-i-n} light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact. Electron spin injection is carried out through an alumina tunnel barrier from a Co/Pt thin film exhibiting a strong out-of-plane anisotropy. The electrons spin polarization is then analysed through the circular polarization of emitted light. All the light polarization measurements are performed without an external applied magnetic field \textit{i.e.} in remanent magnetic states. The light polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the Co/Pt injector. We could achieve a circular polarization degree of the emitted light of 3 % at 5 K. Moreover this light polarization remains almost constant at least up to 200 K.Comment: accepted in AP

Electron glass effects in amorphous NbSi films

We report on non equilibrium field effect in insulating amorphous NbSi thin films having different Nb contents and thicknesses. The hallmark of an electron glass, namely the logarithmic growth of a memory dip in conductance versus gate voltage curves, is observed in all the films after a cooling from room temperature to 4.2 K. A very rich phenomenology is demonstrated. While the memory dip width is found to strongly vary with the film parameters, as was also observed in amorphous indium oxide films, screening lengths and temperature dependence of the dynamics are closer to what is observed in granular Al films. Our results demonstrate that the differentiation between continuous and discontinuous systems is not relevant to understand the discrepancies reported between various systems in the electron glass features. We suggest instead that they are not of fundamental nature and stem from differences in the protocols used and in the electrical inhomogeneity length scales within each material.Comment: Submission SciPos

Manifestation of ageing in the low temperature conductance of disordered insulators

We are interested in the out of equilibrium phenomena observed in the electrical conductance of disordered insulators at low temperature, which may be signatures of the electron coulomb glass state. The present work is devoted to the occurrence of ageing, a benchmark phenomenon for the glassy state. It is the fact that the dynamical properties of a glass depend on its age, i.e. on the time elapsed since it was quench-cooled. We first critically analyse previous studies on disordered insulators and question their interpretation in terms of ageing. We then present new measurements on insulating granular aluminium thin films which demonstrate that the dynamics is indeed age dependent. We also show that the results of different relaxation protocols are related by a superposition principle. The implications of our findings for the mechanism of the conductance slow relaxations are then discussed

Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering

We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence of a 2-3 nm thick amorphous layer at the interface mitigates the response in devices fabricated by direct deposition of n-AlInN on p-Si(111). Adding a 4-nm-thick AlN buffer layer improves the AlInN crystalline quality and the interface alignment leading to devices with a conversion efficiency of 1.5% under 1-sun AM1.5G illumination. For thicker buffers the performance lessens due to inefficient tunnel transport through the AlN. These results demonstrate the feasibility of using In-rich AlInN alloys deposited by radio frequency sputtering as novel electron-selective contacts to Si-heterojunction solar cells

Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering

8 pags., 5 figs., 1 tab.We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of AlInN on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence of a 2-3 nm thick amorphous layer at the interface mitigates the response in devices fabricated by direct deposition of n-AlInN on p-Si(111). Adding a 4-nm-thick AlN buffer layer improves the AlInN crystalline quality and the interface alignment leading to devices with a conversion efficiency of 1.5% under 1-sun AM1.5G illumination. For thicker buffers the performance lessens due to inefficient tunnel transport through the AlN. These results demonstrate the feasibility of using In-rich AlInN alloys deposited by radio frequency sputtering as novel electron-selective contacts to Si-heterojunction solar cells.Support from projects NitPho (TEC2014-60483-R), ANOMALOS (TEC2015- 71127-C2-2-R), INFRASIL (TEC 2013-41730-R), SINFOTON (S2013/MIT 2790), MADRID-PV (2013/MAE-2780), PhotoAl (CCG2015/EXP-014), PAI research group (TEP-946 INNANOMAT), and FEDER-EU is acknowledged. TEM data were taken at DME-SC-ICyT-UCA. A. Nuñez- ˜ Cascajero thanks her grant to the University of Alcala and D. Montero acknowledges his contract ´ BES-2014-067585

Polarization sensitive silicon photodiodes using nanostructured metallic grids

In this paper, we present the design, fabrication, and characterization of wire grid polarizers. These polarizers show high extinction ratios and high transmission with structure dimensions that are compatible with current complementary metal-oxide-semiconductor (CMOS) technology. To design these wire grids, we first analyze the transmission properties of single apertures. From the understanding of a single aperture, we apply a modal expansion method to model wire grids. The most promising grids are fabricated on both a glass substrate and CMOS photodiode. An extinction ratio higher than 200 is measured

Dry and Humid Periods Reconstructed from Tree Rings in the Former Territory of Sogdiana (Central Asia) and Their Socio-economic Consequences over the Last Millennium

One of the richest societies along the Silk Road developed in Sogdiana, located in present-day Tajikistan, Uzbekistan, and Kyrgyzstan. This urban civilisation reached its greatest prosperity during the golden age of the Silk Road (sixth to ninth century ce). Rapid political and economic changes, accelerated by climatic variations, were observed during last millennium in this region. The newly developed tree-ring-based reconstruction of precipitation for the pastmillennium revealed a series of dry and wet stages. During the Medieval Climate Anomaly (MCA), two dry periods occurred (900–1000 and 1200–1250), interrupted by a phase of wetter conditions. Distinct dry periods occurred around 1510–1650, 1750–1850, and 1920–1970, respectively. The juniper tree-ring record of moisture changes revealed that major dry and pluvial episodes were consistent with those indicated by hydroclimatic proxy data from adjacent areas. These climate fluctuations have had longand short term consequences for human history in the territory of former Sogdiana