955 research outputs found
Magnetic properties of Sn/1-x/Cr/x/Te diluted magnetic semiconductors
We present the studies of Sn/1-x/Cr/x/Te semimagnetic semiconductors with
chemical composition x ranging from 0.004 to 0.012. The structural
characterization indicates that even at low average Cr-content x < ?0.012, the
aggregation into micrometer size clusters appears in our samples. The magnetic
properties are affected by the presence of clusters. In all our samples we
observe the transition into the ordered state at temperatures between 130 and
140 K. The analysis of both static and dynamic magnetic susceptibility data
indicates that the spin-glass-like state is observed in our samples. The
addition of Cr to the alloy seems to shift the spin-glass-like transition from
130 K for x = 0.004 to 140 K for x = 0.012.Comment: 4 pages, 4 figure
The magnetic interactions in spin-glasslike Ge/1-x-y/Sn/x/Mn/y/Te diluted magnetic semiconductor
We investigated the nature of the magnetic phase transition in the
Ge/1-x-y/Sn/x/Mn/y/Te mixed crystals with chemical composition changing in the
range of 0.083 < x < 0.142 and 0.012 < y < 0.119. The DC magnetization
measurements performed in the magnetic field up to 90 kOe and temperature range
2-200 K showed that the magnetic ordering at temperatures below T = 50 K
exhibits features characteristic for both spin-glass and ferromagnetic phases.
The modified Sherrington - Southern model was applied to explain the observed
transition temperatures. The calculations showed that the spin-glass state is
preferred in the range of the experimental carrier concentrations and Mn
content. The value of the Mn hole exchange integral was estimated to be J/pd/ =
0.45+/-0.05 eV. The experimental magnetization vs temperature curves were
reproduced satisfactory using the non-interacting spin-wave theory with the
exchange constant J/pd/ values consistent with those calculated using modified
Sherrington - Southern model. The magnetization vs magnetic field curves showed
nonsaturating behavior at magnetic fields B < 90 kOe indicating the presence of
strong magnetic frustration in the system. The experimental results were
reproduced theoretically with good accuracy using the molecular field
approximation-based model of a disordered ferromagnet with long-range RKKY
interaction.Comment: 9 pages, 6 figure
Magnetoresistance of a semiconducting magnetic wire with domain wall
We investigate theoretically the influence of the spin-orbit interaction of
Rashba type on the magnetoresistance of a semiconducting ferromagnetic
nanostructure with a laterally constrained domain wall. The domain wall is
assumed sharp (on the scale of the Fermi wave length of the charge carriers).
It is shown that the magnetoresistance in such a case can be considerably
large, which is in a qualitative agreement with recent experimental
observations. It is also shown that spin-orbit interaction may result in an
increase of the magnetoresistance. The role of localization corrections is also
briefly discussed.Comment: 5 pages, 2 figure
Analogies between optical propagation and heat diffusion: applications to microcavities, gratings and cloaks
International audienceA new analogy between optical propagation and heat diffusion in heterogeneous anisotropic media has beenproposed recently [S. Guenneau, C. Amra, and D. Veynante, Optics Express Vol. 20, 8207-8218 (2012)]. A detailedderivation of this unconventional correspondence is presented and developed. In time harmonic regime, all thermalparameters are related to optical ones in artificial metallic media, thus making possible to use numerical codesdeveloped for optics. Then the optical admittance formalism is extended to heat conduction in multilayeredstructures. The concepts of planar micro-cavities, diffraction gratings, and planar transformation optics for heatconduction are addressed. Results and limitations of the analogy are emphasized
Native vacancy defects in Zn1-x(Mn,Co)xGeAs2 studied with positron annihilation spectroscopy
We have studied vacancy defects in chalcopyrite semimagnetic semiconducting mixed Zn1−x(Mn,Co)xGeAs2 bulk crystals with alloy composition x varying between 0.052 to 0.182 using positron annihilation spectroscopy. We identified As vacancies, potentially complexed with the transition metal alloying elements, in all the studied samples, while no cation vacancy related defects were detected. The positron lifetimes for the bulk ZnGeAs2 lattice and neutral As vacancy were determined to be τB=220–230 ps and τAs=300±10 ps, respectively. Our results also show that the p-type conductivity in the samples is not due to cation vacancy related acceptor centers. The As vacancies were found to be present at such low concentrations that they cannot be responsible for the compensation of the p-type conductivity or the reduction of mobility in the Zn1−x(Mn,Co)xGeAs2 samples.Peer reviewe
- …