20,443 research outputs found

    Metamaterial with polarization and direction insensitive resonant transmission response mimicking electromagnetically induced transparency

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    We report on a planar metamaterial, the resonant transmission frequency of which does not depend on the polarization and angle of incidence of electromagnetic waves. The resonance results from the excitation of high-Q antisymmetric trapped current mode and shows sharp phase dispersion characteristic to Fano-type resonances of the electromagnetically induced transparency phenomenon

    Rho primes in analyzing e+e- annihilation, MARK III, LASS and ARGUS data

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    The results of an analysis are presented of some recent data on the reactions e+eπ+ππ+πe^+e^-\to\pi^+\pi^-\pi^+\pi^-, e+eπ+ππ0π0e^+e^-\to\pi^+\pi^-\pi^0\pi^0 with the subtracted ωπ0\omega\pi^0 events, e+eωπ0e^+e^-\to\omega\pi^0, e+eηπ+πe^+e^-\to\eta \pi^+\pi^-, e+eπ+πe^+e^-\to\pi^+\pi^-, Kpπ+πΛK^-p\to\pi^+\pi^-\Lambda, the decays J/ψπ+ππ0J/\psi\to\pi^+\pi^-\pi^0, tauνtauπ+πππ0tau^-\to\nu_tau\pi^+\pi^-\pi^-\pi^0 tauντωπtau^-\to\nu_\tau\omega\pi^-, upon taking into account both the strong energy dependence of the partial widths on energy and the previously neglected mixing of the ρ\rho type resonances. The above effects are shown to exert an essential influence on the specific values of masses and coupling constants of heavy resonances and hence are necessary to be accounted for in establishing their true nature.Comment: 20 pages, ReVTeX, 9 Postscript figures As compared to hep-ph/9607398, new material concerning the analysis of the ARGUS data on the tau decays into four pion hadronic states is adde

    The ννγ\nu \nu \gamma Amplitude in an External Homogeneous Electromagnetic Field

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    Neutrino-photon interactions in the presence of an external homogeneous constant electromagnetic field are studied. The ννγ\nu \nu \gamma amplitude is calculated in an electromagnetic field of the general type, when the two field invariants are nonzero.Comment: 7 pages, 1 figur

    Orbital symmetry fingerprints for magnetic adatoms in graphene

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    In this paper, we describe the formation of local resonances in graphene in the presence of magnetic adatoms containing localized orbitals of arbitrary symmetry, corresponding to any given angular momentum state. We show that quantum interference effects which are naturally inbuilt in the honeycomb lattice in combination with the specific orbital symmetry of the localized state lead to the formation of fingerprints in differential conductance curves. In the presence of Jahn-Teller distortion effects, which lift the orbital degeneracy of the adatoms, the orbital symmetries can lead to distinctive signatures in the local density of states. We show that those effects allow scanning tunneling probes to characterize adatoms and defects in graphene.Comment: 15 pages, 11 figures. Added discussion about the multi-orbital case and the validity of the single orbital picture. Published versio

    Infrared probe of the anomalous magnetotransport of highly oriented pyrolytic graphite in the extreme quantum limit

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    We present a systematic investigation of the magnetoreflectance of highly oriented pyrolytic graphite in magnetic field B up to 18 T . From these measurements, we report the determination of lifetimes tau associated with the lowest Landau levels in the quantum limit. We find a linear field dependence for inverse lifetime 1/tau(B) of the lowest Landau levels, which is consistent with the hypothesis of a three-dimensional (3D) to 1D crossover in an anisotropic 3D metal in the quantum limit. This enigmatic result uncovers the origin of the anomalous linear in-plane magnetoresistance observed both in bulk graphite and recently in mesoscopic graphite samples

    Metal-Insulator-Like Behavior in Semimetallic Bismuth and Graphite

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    When high quality bismuth or graphite crystals are placed in a magnetic field directed along the c-axis (trigonal axis for bismuth) and the temperature is lowered, the resistance increases as it does in an insulator but then saturates. We show that the combination of unusual features specific to semimetals, i.e., low carrier density, small effective mass, high purity, and an equal number of electrons and holes (compensation), gives rise to a unique ordering and spacing of three characteristic energy scales, which not only is specific to semimetals but which concomitantly provides a wide window for the observation of apparent field induced metal-insulator behavior. Using magnetotransport and Hall measurements, the details of this unusual behavior are captured with a conventional multi-band model, thus confirming the occupation by semimetals of a unique niche between conventional metals and semiconductors.Comment: 4 pages, 4 figs, data and discussion on bismuth added, final published versio

    Application of Current Algebra in Three Pseudoscalar Meson Decays of τ\tau Lepton

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    The decays of τ3πν\tau \to 3\pi \nu and τπKν,Kρν\tau \to \pi K^{*} \nu, K\rho \nu are calculated using the hard pion and kaon current algebra and assuming the Axial-Vector meson dominance of the hadronic axial currents. Using the experimental data on their masses and widths, the τ\tau decay branching ratios into these channels are calculated and found to be in a reasonable agreement with the experimental data. In particular, using the available Aleph data on the 3π3\pi spectrum, we determine the A1A_1 parameters, mA=1.24±0.02GeVm_A=1.24\pm 0.02 GeV, ΓA=0.43±0.02\Gamma _A=0.43\pm 0.02 GeV; the hard current algebra calculation yields a 3π3\pi branching ratio of 19±3%19 \pm 3 \%.Comment: 14 pages, Tex, 6 included figure

    Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors

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    Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the optimisation of field effect transistors to the engineering of qubit devices with enhanced stability and coherence. Existing methods are surface sensitive and are unable to probe band bending at depth from surface or bulk charges related to crystal defects. Here we propose an in-situ method for probing band bending in a semiconductor device by imaging an array of atomic-sized quantum sensing defects to report on the local electric field. We implement the concept using the nitrogen-vacancy centre in diamond, and map the electric field at different depths under various surface terminations. We then fabricate a two-terminal device based on the conductive two-dimensional hole gas formed at a hydrogen-terminated diamond surface, and observe an unexpected spatial modulation of the electric field attributed to a complex interplay between charge injection and photo-ionisation effects. Our method opens the way to three-dimensional mapping of band bending in diamond and other semiconductors hosting suitable quantum sensors, combined with simultaneous imaging of charge transport in complex operating devices.Comment: This is a pre-print of an article published in Nature Electronics. The final authenticated version is available online at https://dx.doi.org/10.1038/s41928-018-0130-
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