346 research outputs found
Low-field diffusion magneto-thermopower of a high mobility two-dimensional electron gas
The low magnetic field diffusion thermopower of a high mobility
GaAs-heterostructure has been measured directly on an electrostatically defined
micron-scale Hall-bar structure at low temperature (T = 1.6 K) in the low
magnetic field regime (B < 1.2 T) where delocalized quantum Hall states do not
influence the measurements. The sample design allowed the determination of the
field dependence of the thermopower both parallel and perpendicular to the
temperature gradient, denoted respectively by Sxx (longitudinal thermopower)
and Syx (Nernst-Ettinghausen coefficient). The experimental data show clear
oscillations in Sxx and Syx due to the formation of Landau levels for 0.3 T < B
< 1.2 T and reveal that Syx is approximately 120 times larger than Sxx at a
magnetic field of 1 T, which agrees well with the theoretical prediction.Comment: 4 pages, 4 figure
Lattice constant variation and complex formation in zincblende Gallium Manganese Arsenide
We perform high resolution X-ray diffraction on GaMnAs mixed crystals as well
as on GaMnAs/GaAs and GaAs/MnAs superlattices for samples grown by low
temperature molecular beam epitaxy under different growth conditions. Although
all samples are of high crystalline quality and show narrow rocking curve
widths and pronounced finite thickness fringes, the lattice constant variation
with increasing manganese concentration depends strongly on the growth
conditions: For samples grown at substrate temperatures of 220 and 270 degrees
C the extrapolated relaxed lattice constant of Zincblende MnAs is 0.590 nm and
0.598 nm respectively. This is in contrast to low temperature GaAs, for which
the lattice constant decreases with increasing substrate temperature.Comment: pdf onl
Thermo-Electric Properties of Quantum Point Contacts
I. Introduction
II. Theoretical background (Landauer-Buttiker formalism of
thermo-electricity, Quantum point contacts as ideal electron waveguides,
Saddle-shaped potential)
III. Experiments (Thermopower, Thermal conductance, Peltier effect)
IV. ConclusionsComment: #4 of a series of 4 legacy reviews on QPC'
Zero field spin polarization in a 2D paramagnetic resonant tunneling diode
We study I-V characteristics of an all-II-VI semiconductor resonant tunneling
diode with dilute magnetic impurities in the quantum well layer. Bound magnetic
polaron states form in the vicinity of potential fluctuations at the well
interface while tunneling electrons traverse these interface quantum dots. The
resulting microscopic magnetic order lifts the degeneracy of the resonant
tunneling states. Although there is no macroscopic magnetization, the resulting
resonant tunneling current is highly spin polarized at zero magnetic field due
to the zero field splitting. Detailed modeling demonstrates that the local spin
polarization efficiency exceeds 90% without an external magnetic field.Comment: 7 pages, 10 figures (including supplementary information
Residual strain in free-standing CdTe nanowires overgrown with HgTe
We investigate the crystal properties of CdTe nanowires overgrown with HgTe.
Scanning electron microscopy (SEM) and scanning transmission electron
microscopy (STEM) confirm, that the growth results in a high ensemble
uniformity and that the individual heterostructures are single-crystalline,
respectively. We use high-resolution X-ray diffraction (HRXRD) to investigate
strain, caused by the small lattice mismatch between the two materials. We find
that both CdTe and HgTe show changes in lattice constant compared to the
respective bulk lattice constants. The measurements reveal a complex strain
pattern with signatures of both uniaxial and shear strains present in the
overgrown nanowires
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