Modelling Deformations in Car Crash animation

In this paper, we present a prototype of a deformation engine to efficiently model and render the damaged structure of vehicles in crash scenarios. We introduce a novel system architecture to accelerate the computation, which is traditionally an extremely expensive task. We alter a rigid body simulator to predict trajectories of cars during a collision and formulate a correction procedure to estimate the deformations of the collapsed car structures within the contact area. Non-linear deformations are solved based on the principle of energy conservation. Large plastic deformations resulting from collisions are modelled as a weighted combination of deformation examples of beams which can be produced using classical mechanics

Is a combination of varenicline and nicotine patch more effective in helping smokers quit than varenicline alone? A randomised controlled trial

This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited

On Factorization of a Special type of Vandermonde Rhotrix

Vandermonde matrices have important role in many branches of applied mathematics such as combinatorics, coding theory and cryptography. Some authors discuss Vandermonde rhotrices in the literature for its mathematical enrichment. Here, we introduce a special type of Vandermonde rhotrix and obtain its LR factorization, namely left and right triangular factorization which is further used to obtain the inverse of the rhotrix

Pre-emptive and therapeutic adoptive immunotherapy for nasopharyngeal carcinoma: Phenotype and effector function of T cells impact on clinical response

published_or_final_versio

On factorization of a special type of vandermonde rhotrix

Vandermonde matrices have important role in many branches of applied mathematics such as combinatorics, coding theory and cryptography. Some authors discuss the Vandermonde rhotrices in the literature for its mathematical enrichment. Here, we introduce a special type of Vandermonde rhotrix and obtain its LR factorization namely left and right triangular factorization, which is further used to obtain the inverse of the rhotrix

On Circulant-Like Rhotrices over Finite Fields

Circulant matrices over finite fields are widely used in cryptographic hash functions, Lattice based cryptographic functions and Advanced Encryption Standard (AES). Maximum distance separable codes over finite field GF2 have vital a role for error control in both digital communication and storage systems whereas maximum distance separable matrices over finite field GF2 are used in block ciphers due to their properties of diffusion. Rhotrices are represented in the form of coupled matrices. In the present paper, we discuss the circulant- like rhotrices and then construct the maximum distance separable rhotrices over finite fields

Genomic, Pathway Network, and Immunologic Features Distinguishing Squamous Carcinomas

This integrated, multiplatform PanCancer Atlas study co-mapped and identified distinguishing molecular features of squamous cell carcinomas (SCCs) from five sites associated with smokin

Pan-Cancer Analysis of lncRNA Regulation Supports Their Targeting of Cancer Genes in Each Tumor Context

Long noncoding RNAs (lncRNAs) are commonly dys-regulated in tumors, but only a handful are known toplay pathophysiological roles in cancer. We inferredlncRNAs that dysregulate cancer pathways, onco-genes, and tumor suppressors (cancer genes) bymodeling their effects on the activity of transcriptionfactors, RNA-binding proteins, and microRNAs in5,185 TCGA tumors and 1,019 ENCODE assays.Our predictions included hundreds of candidateonco- and tumor-suppressor lncRNAs (cancerlncRNAs) whose somatic alterations account for thedysregulation of dozens of cancer genes and path-ways in each of 14 tumor contexts. To demonstrateproof of concept, we showed that perturbations tar-geting OIP5-AS1 (an inferred tumor suppressor) andTUG1 and WT1-AS (inferred onco-lncRNAs) dysre-gulated cancer genes and altered proliferation ofbreast and gynecologic cancer cells. Our analysis in-dicates that, although most lncRNAs are dysregu-lated in a tumor-specific manner, some, includingOIP5-AS1, TUG1, NEAT1, MEG3, and TSIX, synergis-tically dysregulate cancer pathways in multiple tumorcontexts

Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors

Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored. Besides complexity, high defect densities and junction leakage currents present limitations in the approach. Motivated by this challenge, here we utilize an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on Si/SiO2 substrates. As a parallel to silicon-on-insulator (SOI) technology14,we use the abbreviation "XOI" to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsOx layer (~1 nm thick). The fabricated FETs exhibit an impressive peak transconductance of ~1.6 mS/{\mu}m at VDS=0.5V with ON/OFF current ratio of greater than 10,000 and a subthreshold swing of 107-150 mV/decade for a channel length of ~0.5 {\mu}m