42 research outputs found

    Quantum embedding methods for correlated excited states of point defects: Case studies and challenges

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    A quantitative description of the excited electronic states of point defects and impurities is crucial for understanding materials properties, and possible applications of defects in quantum technologies. This is a considerable challenge for computational methods, since Kohn-Sham density functional theory (DFT) is inherently a ground-state theory, while higher-level methods are often too computationally expensive for defect systems. Recently, embedding approaches have been applied that treat defect states with many-body methods, while using DFT to describe the bulk host material. We implement such an embedding method, based on Wannierization of defect orbitals and the constrained random-phase approximation approach, and perform systematic characterization of the method for three distinct systems with current technological relevance: a carbon dimer replacing a B and N pair in bulk hexagonal BN (CBCN), the negatively charged nitrogen-vacancy center in diamond (NV-), and an Fe impurity on the Al site in wurtzite AlN (FeAl). In the context of these test-case defects, we demonstrate that crucial considerations of the methodology include convergence of the bulk screening of the active-space Coulomb interaction, the choice of exchange-correlation functional for the initial DFT calculation, and the treatment of the "double-counting"correction. For CBCN we show that the embedding approach gives many-body states in agreement with analytical results on the Hubbard dimer model, which allows us to elucidate the effects of the DFT functional and double-counting correction. For the NV- center, our method demonstrates good quantitative agreement with experiments for the zero-phonon line of the triplet-triplet transition. Finally, we illustrate challenges associated with this method for determining the energies and orderings of the complex spin multiplets in FeAl. © 2022 American Physical Society.National Science Foundation, NSF: DMR-1918455; Council on grants of the President of the Russian Federation: SP-2488.2021.1C.E.D. thanks A. Alkauskas, D. Wickramaratne, M. Zingl, A. Gali, M. Turiansky, T. Berkelbach, and A. Millis for fruitful conversations and comments on the manuscript. The Flatiron Institute is a division of the Simons Foundation. C.E.D. acknowledges support from the National Science Foundation under Grant No. DMR-1918455. The work of D.I.B. was supported by the grant of the President of the Russian Federation, Project No. SP-2488.2021.1

    Observation of the nonlinear Hall effect under time reversal symmetric conditions

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    The electrical Hall effect is the production of a transverse voltage under an out-of-plane magnetic field. Historically, studies of the Hall effect have led to major breakthroughs including the discoveries of Berry curvature and the topological Chern invariants. In magnets, the internal magnetization allows Hall conductivity in the absence of external magnetic field. This anomalous Hall effect (AHE) has become an important tool to study quantum magnets. In nonmagnetic materials without external magnetic fields, the electrical Hall effect is rarely explored because of the constraint by time-reversal symmetry. However, strictly speaking, only the Hall effect in the linear response regime, i.e., the Hall voltage linearly proportional to the external electric field, identically vanishes due to time-reversal symmetry. The Hall effect in the nonlinear response regime, on the other hand, may not be subject to such symmetry constraints. Here, we report the observation of the nonlinear Hall effect (NLHE) in the electrical transport of the nonmagnetic 2D quantum material, bilayer WTe2. Specifically, flowing an electrical current in bilayer WTe2 leads to a nonlinear Hall voltage in the absence of magnetic field. The NLHE exhibits unusual properties sharply distinct from the AHE in metals: The NLHE shows a quadratic I-V characteristic; It strongly dominates the nonlinear longitudinal response, leading to a Hall angle of about 90 degree. We further show that the NLHE directly measures the "dipole moment" of the Berry curvature, which arises from layer-polarized Dirac fermions in bilayer WTe2. Our results demonstrate a new Hall effect and provide a powerful methodology to detect Berry curvature in a wide range of nonmagnetic quantum materials in an energy-resolved way

    The Mayer-Rokitansky-KĂŒster-Hauser syndrome (congenital absence of uterus and vagina) – phenotypic manifestations and genetic approaches

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    The Mayer-Rokitansky-KĂŒster-Hauser (MRKH) syndrome affects at least 1 out of 4500 women and has for a long time been considered as a sporadic anomaly. Congenital absence of upper vagina and uterus is the prime feature of the disease which, in addition, is often found associated with unilateral renal agenesis or adysplasia as well as skeletal malformations (MURCS association). The phenotypic manifestations of MRKH overlap various other syndromes or associations and thus require accurate delineation. Since MRKH manifests itself in males, the term GRES syndrome (Genital, Renal, Ear, Skeletal) might be more appropriate when applied to both sexes. The MRKH syndrome, when described in familial aggregates, seems to be transmitted as an autosomal dominant trait with an incomplete degree of penetrance and variable expressivity. This suggests the involvement of either mutations in a major developmental gene or a limited chromosomal deletion. Until recently progress in understanding the genetics of MRKH syndrome has been slow, however, now HOX genes have been shown to play key roles in body patterning and organogenesis, and in particular during genital tract development. Expression and/or function defects of one or several HOX genes may account for this syndrome

    Topological Phase Transition in 2D 1Tâ€Č‐WSTe

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    Heusler, Weyl and Berry

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    Heusler compounds, initially discovered by Fritz Heusler more than a century ago, have grown into a family of more than 1,000 compounds, synthesized from combinations of more than 40 elements. Recently, by incorporating heavy elements that can give rise to strong spin–orbit coupling, non-trivial topological phases of matter, such as topological insulators, have been discovered in Heusler materials. Moreover, interplay between the symmetry, spin–orbit coupling and magnetic structure allows for the realization of a wide variety of topological phases through Berry curvature design. The topological properties of Heusler compounds can be manipulated by various external perturbations, resulting in exotic properties, such as the chiral anomaly and large anomalous, spin and topological Hall effects. In addition, the non-zero Berry curvature that arises as a result of non-collinear order gives rise to a non-zero anomalous Hall effect. Besides this k-space Berry curvature, Heusler compounds with non-collinear magnetic structures also possess real-space topological states in the form of magnetic antiskyrmions, which have not yet been observed in other materials. In this Review, we discuss Heusler compounds from a topological perspective and the connection between the topology and the symmetry properties, spin gapless semiconductors, magnetic compensated ferrimagnets, non-collinear order in ferromagnetic and antiferromagnetic Heusler compounds, the anomalous Hall effect and, finally, magnetic antiskyrmions. Together with the new topological viewpoint and the high tunability, novel physical properties and phenomena await discovery in Heusler compounds

    Topological surface Fermi arcs in the magnetic Weyl semimetal Co<sub>3</sub>Sn<sub>2</sub>S<sub>2</sub>

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    Very recently, the half-metallic compound Co3Sn2S2 was proposed to be a magnetic Weyl semimetal (WSM) with Weyl points only 60 meV above the Fermi level E-F. Owing to the low charge carrier density and large Berry curvature induced, Co3Sn2S2 possesses both a large anomalous Hall conductivity and a large anomalous Hall angle, which provide strong evidence for the existence of Weyl points in Co3Sn2S2. In this work, we theoretically study the surface topological feature of Co3Sn2S2 and its counterpart Co3Sn2Se2. By cleaving the sample at the weak Sn-S/Se bonds, one can achieve two different surfaces terminated with Sn and S/Se atoms, respectively. The resulting Fermi-arc-related states can range from the energy of the Weyl points to E-F - 0.1 eV in the Sn-terminated surface. Therefore, it should be possible to observe the Fermi arcs in angle-resolved photoemission spectroscopy (ARPES) measurements. Furthermore, in order to simulate quasiparticle interference in scanning tunneling microscopy (STM) measurements, we also calculate the joint density of states for both terminals. This work should be helpful for a comprehensive understanding of the topological properties of these two magnetic WSMs and further ARPES and STM measurements

    Modular Arithmetic with Nodal Lines Drumhead Surface States in ZrSiTe

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    We study the electronic structure of the nodal line semimetal ZrSiTe both experimentally and theoretically. We find two different surface states in ZrSiTe—topological drumhead surface states and trivial floating band surface states, which can be easily distinguished in ARPES experiments. Using the spectra of Wilson loops, we show that a nontrivial Berry phase that exists in a confined region within the Brillouin zone gives rise to the topological drumhead-type surface states. The Z_{2} structure of the Berry phase induces a Z_{2} “modular arithmetic” of the surface states, allowing surface states derived from different nodal lines to hybridize and gap out, which can be probed by a set of Wilson loops. Our findings are confirmed by ab initio calculations and angle-resolved photoemission experiments, which are in excellent agreement with each other and the topological analysis. This work is the first complete characterization of topological surface states in the family of square-net-based nodal line semimetals, and thus it fundamentally increases the understanding of the topological nature of this growing class of topological semimetals
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