The Use of Biological Feedback in Complex Treatment of Patients with Rheumatoid Arthritis and Systemic Sclerosis

There are significant emotional problems in patients with systemic sclerosis (SS) and rheumatoid arthritis (RA), including most expressed symptoms of anxiety and depression that complicate the process of social and psychological adaptation of patients, reduce the level of subjective control as an attribute of personal responsibility for controlling their disease. The effectiveness of the biofeedback (BFB) training inthe treatment of patients with rheumatoid arthritis and systemic sclerosis is analyzed. Analysis of the effectiveness of treatment was conducted by studying the dynamics of a number of psychological indices (the level of subjective control, reactive and personal anxiety, depression) and their comparison in patients of the main and control groups before and after the treatment. Correction of the psycho-emotional state of patients with SS and RA was carried out using biofeedback (BFB), based on the principle of self-regulation of body functions using external feedback systems. There was a significant reduction in anxiety and depressive reactions in patients, during the process of BFB therapy, accompanied by a significant decrease of scoresby Spielberger–Khanin and Beck psychological tests, noted a significant effect of increasing the level of subjective control that can improve the effectiveness of therapy and long-term disease prognosis. Thus, the additional application of BFB training in complex treatment of SS and RA patients promoted the improvement of the efficiency of the treatment and rehabilitation carried out and the improvement of the patients’ quality of life. Keywords: BFB training, systemic sclerosis, rheumatoid arthritis, rheumatic diseases, reactive anxiety, personality anxiety, depression, level of subjective contro

Estimating the Fractal Dimension, K_2-entropy, and the Predictability of the Atmosphere

The series of mean daily temperature of air recorded over a period of 215 years is used for analysing the dimensionality and the predictability of the atmospheric system. The total number of data points of the series is 78527. Other 37 versions of the original series are generated, including ``seasonally adjusted'' data, a smoothed series, series without annual course, etc. Modified methods of Grassberger and Procaccia are applied. A procedure for selection of the ``meaningful'' scaling region is proposed. Several scaling regions are revealed in the ln C(r) versus ln r diagram. The first one in the range of larger ln r has a gradual slope and the second one in the range of intermediate ln r has a fast slope. Other two regions are settled in the range of small ln r. The results lead us to claim that the series arises from the activity of at least two subsystems. The first subsystem is low-dimensional (d_f=1.6) and it possesses the potential predictability of several weeks. We suggest that this subsystem is connected with seasonal variability of weather. The second subsystem is high-dimensional (d_f>17) and its error-doubling time is about 4-7 days. It is found that the predictability differs in dependence on season. The predictability time for summer, winter and the entire year (T_2 approx. 4.7 days) is longer than for transition-seasons (T_2 approx. 4.0 days for spring, T_2 approx. 3.6 days for autumn). The role of random noise and the number of data points are discussed. It is shown that a 15-year-long daily temperature series is not sufficient for reliable estimations based on Grassberger and Procaccia algorithms.Comment: 27 pages (LaTex version 2.09) and 15 figures as .ps files, e-mail: [email protected]

Si_{1-x}Ge_{x} Single Crystals Grown by the Czochralski Method: Defects and Electrical Properties

Defects in $Si_{1-x}Ge_{x}$ single crystals (2-8.5 at.% Ge) grown by the Czochralski method are investigated by synchrotron white beam topography and phase contrast imaging techniques. As the Ge concentration increases, dislocation structure evolves from individual dislocations to slip bands and sub-grain boundaries. We discuss the effect of dislocations on the electrical characteristics such as resistivity $\rho_{v}$, the Hall hole mobility $\mu_{p}$ and carrier lifetime τ_{e}. Diodes are fabricated by bonding $p-Si_{1-x}Ge_{x}$ to n-Si wafers to investigate I-V characteristics and reverse recovery process. I-V characteristics are not deteriorated in spite of a five times decrease in $\tau_{e}$ with Ge concentration. A small reverse recovery time (determined by the accumulated charge) can be achieved for an optimised preset Ge concentration