Longitudinal photocurrent spectroscopy of a single GaAs/AlGaAs v-groove quantum wire

Modulation-doped GaAs v-groove quantum wires (QWRs) have been fabricated with novel electrical contacts made to two-dimensional electron-gas (2DEG) reservoirs. Here, we present longitudinal photocurrent (photoconductivity/PC) spectroscopy measurements of a single QWR. We clearly observe conductance in the ground-state one-dimensional subbands; in addition, a highly temperature-dependent response is seen from other structures within the v-groove. The latter phenomenon is attributed to the effects of structural topography and localization on carrier relaxation. The results of power-dependent PC measurements suggest that the QWR behaves as a series of weakly interacting localized states, at low temperatures

Electron surface layer at the interface of a plasma and a dielectric wall

We study the potential and the charge distribution across the interface of a plasma and a dielectric wall. For this purpose, the charge bound to the wall is modelled as a quasi-stationary electron surface layer which satisfies Poisson's equation and minimizes the grand canonical potential of the wall-thermalized excess electrons constituting the wall charge. Based on an effective model for a graded interface taking into account the image potential and the offset of the conduction band to the potential just outside the dielectric, we specifically calculate the potential and the electron distribution for magnesium oxide, silicon dioxide and sapphire surfaces in contact with a helium discharge. Depending on the electron affinity of the surface, we find two vastly different behaviors. For negative electron affinity, electrons do not penetrate into the wall and an external surface charge is formed in the image potential, while for positive electron affinity, electrons penetrate into the wall and a space charge layer develops in the interior of the dielectric. We also investigate how the electron surface layer merges with the bulk of the dielectric.Comment: 15 pages, 9 figures, accepted versio

Carrier relaxation in GaAs v-groove quantum wires and the effects of localization

Carrier relaxation processes have been investigated in GaAs/AlGaAs v-groove quantum wires (QWRs) with a large subband separation (46 meV). Signatures of inhibited carrier relaxation mechanisms are seen in temperature-dependent photoluminescence (PL) and photoluminescence-excitation (PLE) measurements; we observe strong emission from the first excited state of the QWR below ~50 K. This is attributed to reduced inter-subband relaxation via phonon scattering between localized states. Theoretical calculations and experimental results indicate that the pinch-off regions, which provide additional two-dimensional confinement for the QWR structure, have a blocking effect on relaxation mechanisms for certain structures within the v-groove. Time-resolved PL measurements show that efficient carrier relaxation from excited QWR states into the ground state, occurs only at temperatures > 30 K. Values for the low temperature radiative lifetimes of the ground- and first excited-state excitons have been obtained (340 ps and 160 ps respectively), and their corresponding localization lengths along the wire estimated.Comment: 9 pages, 8 figures, submitted to Phys. Rev. B Attempted to correct corrupt figure

The State of Strain in Single GaN Nanocolumns As Derived from Micro-Photoluminescence Measurements

In the present paper, studies on the state of strain in single and ensembles of nanocolumns investigated by photoluminescence spectroscopy will be presented. The GaN nanocolumns were either grown in a bottom-up approach or prepared in a top-down approach by etching compact GaN layers grown on Si(111) and sapphire (0001) substrates. Experimental evidence for strain relaxation of the nanocolumns was found. The difference and development of the strain value for different nanocolumns could be verified by spatially resolved micro-photoluminescence on single nanocolumns separated from their substrate. A common D0X spectral position at 3.473 eV was found for all separated single GaN nanocolumns independent of the substrate or processing technique used, as expected for a relaxed system

Temperature-dependence of the phase-coherence length in InN nanowires

We report on low-temperature magnetotransport measurements on InN nanowires, grown by plasma-assisted molecular beam epitaxy. The characteristic fluctuation pattern observed in the conductance was employed to obtain information on phase-coherent transport. By analyzing the root-mean-square and the correlation field of the conductance fluctuations at various temperatures the phase-coherence length was determined.Comment: 4 pages, 4 figure