Longitudinal photocurrent spectroscopy of a single GaAs/AlGaAs v-groove quantum wire

Modulation-doped GaAs v-groove quantum wires (QWRs) have been fabricated with novel electrical contacts made to two-dimensional electron-gas (2DEG) reservoirs. Here, we present longitudinal photocurrent (photoconductivity/PC) spectroscopy measurements of a single QWR. We clearly observe conductance in the ground-state one-dimensional subbands; in addition, a highly temperature-dependent response is seen from other structures within the v-groove. The latter phenomenon is attributed to the effects of structural topography and localization on carrier relaxation. The results of power-dependent PC measurements suggest that the QWR behaves as a series of weakly interacting localized states, at low temperatures

Electron surface layer at the interface of a plasma and a dielectric wall

We study the potential and the charge distribution across the interface of a plasma and a dielectric wall. For this purpose, the charge bound to the wall is modelled as a quasi-stationary electron surface layer which satisfies Poisson's equation and minimizes the grand canonical potential of the wall-thermalized excess electrons constituting the wall charge. Based on an effective model for a graded interface taking into account the image potential and the offset of the conduction band to the potential just outside the dielectric, we specifically calculate the potential and the electron distribution for magnesium oxide, silicon dioxide and sapphire surfaces in contact with a helium discharge. Depending on the electron affinity of the surface, we find two vastly different behaviors. For negative electron affinity, electrons do not penetrate into the wall and an external surface charge is formed in the image potential, while for positive electron affinity, electrons penetrate into the wall and a space charge layer develops in the interior of the dielectric. We also investigate how the electron surface layer merges with the bulk of the dielectric.Comment: 15 pages, 9 figures, accepted versio

Carrier relaxation in GaAs v-groove quantum wires and the effects of localization

Carrier relaxation processes have been investigated in GaAs/AlGaAs v-groove quantum wires (QWRs) with a large subband separation (46 meV). Signatures of inhibited carrier relaxation mechanisms are seen in temperature-dependent photoluminescence (PL) and photoluminescence-excitation (PLE) measurements; we observe strong emission from the first excited state of the QWR below ~50 K. This is attributed to reduced inter-subband relaxation via phonon scattering between localized states. Theoretical calculations and experimental results indicate that the pinch-off regions, which provide additional two-dimensional confinement for the QWR structure, have a blocking effect on relaxation mechanisms for certain structures within the v-groove. Time-resolved PL measurements show that efficient carrier relaxation from excited QWR states into the ground state, occurs only at temperatures > 30 K. Values for the low temperature radiative lifetimes of the ground- and first excited-state excitons have been obtained (340 ps and 160 ps respectively), and their corresponding localization lengths along the wire estimated.Comment: 9 pages, 8 figures, submitted to Phys. Rev. B Attempted to correct corrupt figure

Dynamic redistribution of the electric field of the channel in AlGaN/GaN high electron mobility transistor with nanometer-scale gate length

Transport peculiarities and the physical origin of noise properties in AlGaN/GaN-based high electron mobility transistors (HEMTs) with a large ratio of channel length to gate length were investigated. Dependence of deviations of low-frequency noise spectra from the 1/f law on applied gate voltages was studied in an extended range of frequencies. The behavior is explained in terms of a model based on the dynamic redistribution of the electric field along the two-dimensional channel of the HEMT. The results show that the main contribution to the noise originates from the region under the gate and adjacent to the gate channel regions. (C) 2005 American Institute of Physics

Resonant electron transfer between quantum dots

An interaction of electromagnetic field with a nanostructure composed of two quantum dots is studied theoretically. An effect of a resonant electron transfer between the localized low-lying states of quantum dots is predicted. A necessary condition for such an effect is the existence of an excited bound state whose energy lies close to the top of the barrier separating the quantum dots. This effect may be used to realize the reversible quantum logic gate NOT if the superposition of electron states in different quantum dots is viewed as the superposition of bits 0 and 1.Comment: 8 pages, 1 EPS-figure, submitted to Phys. Rev.

Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SIC by Mbe

AbstractThe Gan heteroepitaxy on 6H-SiC is affected by the bad morphology of the substrate surface. We performed a hydrogen etching at 1550°C on the 6H-SiC(0001) substrates to obtain atomically flat terraces. An improvement of the structural properties of GaN grown by MBE on such substrates after deposition of a LT-AIN buffer layer is observed. A value of less than 220 arcsec of the FWHM of the XRD rocking curve, showing a reduced screw dislocations density, is comparable with the best results reported until now for thick GaN samples. Photoluminescence showed a structured near band edge emission spectrum with evidence of the A, B and C free exciton recombinations

Electronic structure of Pd multi-layers on Re(0001): the role of charge transfer

Understanding the origin of the properties of metal-supported metal thin films is important for the rational design of bimetallic catalysts and other applications, but it is generally difficult to separate effects related to strain from those arising from interface interactions. Here we use density functional (DFT) theory to examine the structure and electronic behavior of few-layer palladium films on the rhenium (0001) surface, where there is negligible interfacial strain and therefore other effects can be isolated. Our DFT calculations predict stacking sequences and interlayer separations in excellent agreement with quantitative low-energy electron diffraction experiments. By theoretically simulating the Pd core-level X-ray photoemission spectra (XPS) of the films, we are able to interpret and assign the basic features of both low-resolution and high-resolution XPS measurements. The core levels at the interface shift to more negative energies, rigidly following the shifts in the same direction of the valence d-band center. We demonstrate that the valence band shift at the interface is caused by charge transfer from Re to Pd, which occurs mainly to valence states of hybridized s-p character rather than to the Pd d-band. Since the d-band filling is roughly constant, there is a correlation between the d-band center shift and its bandwidth. The resulting effect of this charge transfer on the valence d-band is thus analogous to the application of a lateral compressive strain on the adlayers. Our analysis suggests that charge transfer should be considered when describing the origin of core and valence band shifts in other metal / metal adlayer systems

The Mass Definition in Hqet and a New Determination of Vcb_{\text{cb}}

Positive powers of the mass parameter in a physical quantity calculated with the help of heavy quark effective theory originate from a Wilson coefficient in the matching of QCD and HQET Green function. We show that this mass parameter enters the calculation as a well--defined running current mass. We further argue that the recently found ill--definition of the pole mass, which is the natural expansion parameter of HQET, does not affect a phenomenological analysis which uses truncated perturbative series. We reanalyse inclusive semileptonic decays of heavy mesons and obtain the $c$ quark mass $m_c^{\overline{\text{MS}}}(m_c) = (1.35\pm 0.20)\,\text{GeV}$ where the error is almost entirely due to scale--uncertainties. We also obtain $m_b^{\overline{\text{MS}}}(m_b) = (4.6\pm 0.3)\,\text{GeV}$ and $|V_{cb}|(\tau_B/1.49\,\text{ps})^{1/2} = 0.036\pm 0.005$ where the errors come from the uncertainty in the kinetic energy of the heavy quark inside the meson, in the experimental branching ratios, in QCD input parameters, and scale--uncertainties.Comment: 21 p., 5 figs, all style files incl., TUM-T31-56/R (Sec. 2 revised, phenomenological results unchanged