Integrated Ultrasonic Transducer

Ultrasonic transducers composed of integrated assemblies of double-diffused MOS transistors (DMOST) and thin-film piezoelectric transducing elements are described. The entire transducer is built on a single-crystal silicon wafer and offers a number of attractive features including: small size and correspondingly precise localization of the sensitive element, a response that can be predicted by relatively simple theory, a large bandwidth, and a possibility of producing arrays of sensors together with other signal-processing elements in a single processing sequence. The piezoelectric film (zinc oxide) is sputtered either in the gate region of a double-diffused H6S transistor (making the so-called PI-MOST ) or adjacent to the gate electrode of a double-diffused MOS transistor. The transducer~ be excited in various ways: (1) in a thickness mode from the bare silicon surface opposite the piezoelectric-coated region; (2) in a flexural mode caused by bending the silicon wafer; (3) end excitation by surface motions either normal or transverse to the edge of the wafer; (4) by surface waves. Various of these modes are characterized by high sensitivity to strain, low conversion loss, large bandwidth, and good response at very low or very high frequencies

Integrated Ultrasonic Transducer

The typical transducer considered consists of a piezoelectric film, and associated.electrodes, connected to one gate of a dual-gate field-effect transistor in the silicon wafer on which the piezoelectric film is situated. An individual transducer responds to various modes of excitation (flexural, surface, bulk) at frequencies which may range from far below one Hertz to hundreds of megahertz. The second gate of the field-effect transistor can be used for electrical amplitude control or for mixing purposes, Connection of a number of these small transducers together to form arrays permits realizing ultrasonic receiving devices having variable directivity, and progammable surface-wave signal processors

Integrated Ultrasonic Transducer

Ultrasonic transducers composed of integrated assemblies of double-diffused MOS transistors (DMOST) and thin-film piezoelectric transducing elements are described. The entire transducer is built on a single-crystal silicon wafer and offers a number of attractive features including: small size and correspondingly precise localization of the sensitive element, a response that can be predicted by relatively simple theory, a large bandwidth, and a possibility of producing arrays of sensors together with other signal-processing elements in a single processing sequence. The piezoelectric film (zinc oxide) is sputtered either in the gate region of a double-diffused H6S transistor (making the so-called "PI-MOST") or adjacent to the gate electrode of a double-diffused MOS transistor. The transducer~ be excited in various ways: (1) in a thickness mode from the bare silicon surface opposite the piezoelectric-coated region; (2) in a flexural mode caused by bending the silicon wafer; (3) end excitation by surface motions either normal or transverse to the edge of the wafer; (4) by surface waves. Various of these modes are characterized by high sensitivity to strain, low conversion loss, large bandwidth, and good response at very low or very high frequencies.</p

Integrated Ultrasonic Transducer

Ultrasonic transducers composed of integrated assemblies of double-diffused MOS transistors (DMOST) and thin-film piezoelectric transducing elements are described. The entire transducer is built on a single-crystal silicon wafer and offers a number of attractive features including: small size and correspondingly precise localization of the sensitive element, a response that can be predicted by relatively simple theory, a large bandwidth, and a possibility of producing arrays of sensors together with other signal-processing elements in a single processing sequence. The piezoelectric film (zinc oxide) is sputtered either in the gate region of a double-diffused H6S transistor (making the so-called "PI-MOST") or adjacent to the gate electrode of a double-diffused MOS transistor. The transducer~ be excited in various ways: (1) in a thickness mode from the bare silicon surface opposite the piezoelectric-coated region; (2) in a flexural mode caused by bending the silicon wafer; (3) end excitation by surface motions either normal or transverse to the edge of the wafer; (4) by surface waves. Various of these modes are characterized by high sensitivity to strain, low conversion loss, large bandwidth, and good response at very low or very high frequencies.</p

Integrated Ultrasonic Transducer

The typical transducer considered consists of a piezoelectric film, and associated.electrodes, connected to one gate of a dual-gate field-effect transistor in the silicon wafer on which the piezoelectric film is situated. An individual transducer responds to various modes of excitation (flexural, surface, bulk) at frequencies which may range from far below one Hertz to hundreds of megahertz. The second gate of the field-effect transistor can be used for electrical amplitude control or for mixing purposes, Connection of a number of these small transducers together to form arrays permits realizing ultrasonic receiving devices having variable directivity, and progammable surface-wave signal processors.</p

Integrated Ultrasonic Transducer

The typical transducer considered consists of a piezoelectric film, and associated.electrodes, connected to one gate of a dual-gate field-effect transistor in the silicon wafer on which the piezoelectric film is situated. An individual transducer responds to various modes of excitation (flexural, surface, bulk) at frequencies which may range from far below one Hertz to hundreds of megahertz. The second gate of the field-effect transistor can be used for electrical amplitude control or for mixing purposes, Connection of a number of these small transducers together to form arrays permits realizing ultrasonic receiving devices having variable directivity, and progammable surface-wave signal processors.</p

Multidimensional identification of tissue biomarkers of gastric cancer

Gastric cancer remains highly fatal due to a dearth of diagnostic biomarkers for early stage disease and molecular targets for therapy. Plasma membrane proteins, including cluster of differentiation (CD) proteins and receptor tyrosine kinases (RTKs), are a rich reservoir of biomarkers. Recognizing that interrogating plasma membrane proteins individually overlooks extensive interactions among them, we have systematically investigated the membrane proteomes and transcriptomes of six gastric cancer cell lines. Our data revealed aberrantly high expression of proteins whose functions accurately reflect the clinical phenotype of gastric cancer, and prioritized critical RTKs and CD proteins in gastric cancer. Expression of selected surface proteins was confirmed by flow cytometry and immunostaining of clinical gastric cancer tissues. Close to 90% of the gastric cancer tissues in a cohort showed up-regulation of at least one of four proteins, that is, MET, EPHA2, FGFR2, and CD104/ITGB4. All intestinal type gastric cancer tumors in this cohort overexpressed at least one of a panel of three proteins, MET, FGFR2, and EPHA2. This study reports the first quantitative global landscape of the surface proteome of gastric cancer cells and provides a shortlist of gastric cancer biomarkers

Inflation channels in the structure of monetary transmission

У мoнографії висвітлені основні напрями формування монетарної політики держави, розкрито сутність стратегії інфляційного таргетування.The book considers the basic ways of establishing the monetary policy of the country. The essentials of the inflation targeting are disclosed in details

Multidimensional Identification of Tissue Biomarkers of Gastric Cancer

Gastric cancer remains highly fatal due to a dearth of diagnostic biomarkers for early stage disease and molecular targets for therapy. Plasma membrane proteins, including cluster of differentiation (CD) proteins and receptor tyrosine kinases (RTKs), are a rich reservoir of biomarkers. Recognizing that interrogating plasma membrane proteins individually overlooks extensive interactions among them, we have systematically investigated the membrane proteomes and transcriptomes of six gastric cancer cell lines. Our data revealed aberrantly high expression of proteins whose functions accurately reflect the clinical phenotype of gastric cancer, and prioritized critical RTKs and CD proteins in gastric cancer. Expression of selected surface proteins was confirmed by flow cytometry and immunostaining of clinical gastric cancer tissues. Close to 90% of the gastric cancer tissues in a cohort showed up-regulation of at least one of four proteins, that is, MET, EPHA2, FGFR2, and CD104/ITGB4. All intestinal type gastric cancer tumors in this cohort overexpressed at least one of a panel of three proteins, MET, FGFR2, and EPHA2. This study reports the first quantitative global landscape of the surface proteome of gastric cancer cells and provides a shortlist of gastric cancer biomarkers