23 research outputs found

    Evaluation of open photovoltaic and wind production time series for Norwegian locations

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    We investigate the accuracy of wind and photovoltaic time series in individual systems in Norway. To study the accuracy of the available open data sets, we compare the measured production from individual photovoltaic- and wind power plants to the open time series from Renewables.ninja and EMHIRES. Additionally, we try to adjust the wind speed based on the average wind speed from Global Wind Atlas 3.0 and Norwegian water resources and energy directorate's Wind Map to try to achieve more accurate wind speed time series that take into account the local wind conditions, since they are not well represented in the large resolution of the MERRA-2 data set used by Renewables.ninja. The results for photovoltaic production time series are promising, the correlation between production obtained from Renewables.ninja and measured production is above 0.72 and maximum capacity factor difference of 2.5%. For the case of wind production, production time series show considerable deviations depending on the specific wind farm (correlation between 0.51 and 0.91 depending on the case and year). Additionally, the adjustments only improve the time series in some of the wind farms, whereas in others the results are even less accurate than the Renewables.ninja time series compared to the measured data.publishedVersio

    Analyse av solcelleanlegget på Kiwi Dalgård- Sluttrapport

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    Potensialet for solkraftproduksjon på eksisterende norske tak

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    Documentation of IFE-TIMES-Norway v2

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    Study of thermal donors in Czochralski silicon wafers by hyperspectral photoluminescence

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    Termiske donorer (TD) er et stort problem i silisiumindustrien fordi økt elektronkonsentrasjon forstyrrer forventet resistivitet i tillegg til å endre krystallstrukturen og innføre lovlige energinivåer. TD skyldes trolig interstitielt oksygen og formes ved temperaturer rundt 450 °C . Frøenden i en ingot har naturlig høyere oksygenkonsentrasjon og ved støping opplever denne delen av ingoten en tregere nedkjøling som resulterer i lenger tid ved temperaturområde for formering av TD. Muligheten for å bruke hyperspektral fotoluminescens avbildning (SPL) for å detektere termiske donorer i Czochralski silisium (Cz-Si) skiver ble undersøkt. Studien ble gjort gjennom to delstudier der det i første delstudie ble sett på PL-spekteret i skive fra frøenden og haleenden av en ingot før og etter varmebehandling ved 450 °C i 24 timer. Spekteret etter varmebehandling viste økt intensitet for alle energinivå sammenlignet med før varmebehandling, spesielt i energiområdet 0,6 eV - 0,8 eV. Generelt var intensiteten for frøenden høyere enn for haleenden i energiområdet både før og etter varmebehandling. Signalet i energiområdet 0,6 eV - 0,8 eV viste seg som intensitetstopper ved temperatur nedkjølt med nitrogen ( 90 K). De ble ved multivariate Curve Resolution (MCR) vist å være et komplekst signal der alle toppene er tilstede samtidig med lik romlig utbredelse. Ved romtemperatur ( 295 K) var det bare ett bredt signal i samme energiområde. I den andre delstudien ble 10 skiver jevnt fordelt fra en hel ingot undersøkt og PL spekteret ble sett på i sammenheng med konsentrasjon av TD. Intensiteten til signal i energiområdet 0,6 eV - 0,8 eV viste å følge samme trend som [TD] langs ingoten, med synkende verdier nedover i ingoten og ut mot kantene av hver skive. Begge delstudier gir en god indikasjon på at signalene i energiområdet 0,6 eV - 0,8 eV kan brukes til å predikere konsentrasjonen av TD. SPL ble utført ved både temperatur nedkjølt med nitrogen ( 90 K) og ved romtemperatur ( 295 K) i begge studier.Thermal donors (TD) are a major problem in the silicon industry because the increased electron concentration interferes with expected resistivity in addition to changing the crystal structure and introducing legal energy levels. TD are probably due to interstitial oxygen and are formed at temperatures around 450 °C. The seed-end in an ingot has a naturally higher oxygen concentration, and by growth this part of the ingot experiences a slower cooling which results in longer time at the temperature range for the propagation of TDs. The ability to use hyperspectral photoluminescence imaging (SPL) to detect thermal donors in Czochralski silicon wafers was investigated. The study was done through two sub-studies where the first part examined the spectral response of wafers from seed-end and the tail-end of an ingot before and after heat treatment at 450 °C for 24 hours. The spectrum after heat treatment showed increased intensity for all energy levels compared to before heat treatment, especially in the energy range 0.6 eV - 0.8 eV. In general, the intensity of the seed-end was higher than for the tail-end in the energy range, both before and after heat treatment. The signal in the energy range 0.6 eV - 0.8 eV appeared as several intensity maxima at temperature cooled with nitrogen (90 K). Multivariate curve resolution (MCR) showed it to be a complex signal at which all peaks are present at the same time with same spatial distribution. At room temperature (295 K), there was only one broad signal in the same energy range. In the second part, 10 wafers evenly distributed from an entire ingot was examined and spectral response was considered in context with the concentration of TD. The intensity of signal in the energy range 0.6 eV - 0.8 eV showed the same trend as [TD] along the ingot, with decreasing values ​​down the ingot and out towards the edges of each wafer. Both parts provide a good indication that the signals in the energy range 0.6 eV - 0.8 eV can be used to predict the concentration of [TD]. SPL was performed at both temperature cooled with nitrogen (90 K) and at room temperature (295 K) in both studies.M-M

    Analyse av solcelleanlegget på Kiwi Dalgård- Sluttrapport

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