Effect of Coulomb correlation on electron transport through concentric quantum ring-quantum dot structure

We theoretically study the single electron transfer through two-terminal quantum ring capacitively coupled to charged dot placed in its center. For this purpose we solve time-dependent Schrodinger equation for fully correlated two-particle system constituted by the transferred electron and the second particle confined in the dot. Analysis of transmission probability dependence on magnetic field in Ahronov-Bohm effect indicates that the maxima of transmission probability may be enhanced as well as reduced for attractive or repulsive Coulomb interaction respectively. The existence of Coulomb correlation in the system may also lead to inelastic scattering of the transferred electron. In such case, transmission of electron thorugh the ring is not completely blocked for (n+1/2) magnetic flux quanta

Thermoelectric performance of n-type Mg2Ge

Magnesium-based thermoelectric materials (Mg2X, X = Si, Ge, Sn) have received considerable attention due to their availability, low toxicity, and reasonably good thermoelectric performance. The synthesis of these materials with high purity is challenging, however, due to the reactive nature and high vapour pressure of magnesium. In the current study, high purity single phase n-type Mg2Ge has been fabricated through a one-step reaction of MgH2 and elemental Ge, using spark plasma sintering (SPS) to reduce the formation of magnesium oxides due to the liberation of hydrogen. We have found that Bi has a very limited solubility in Mg2Ge and results in the precipitation of Mg2Bi3. Bismuth doping increases the electrical conductivity of Mg2Ge up to its solubility limit, beyond which the variation is minimal. The main improvement in the thermoelectric performance is originated from the significant phonon scattering achieved by the Mg2Bi3 precipitates located mainly at grain boundaries. This reduces the lattice thermal conductivity by ~50% and increases the maximum zT for n-type Mg2Ge to 0.32, compared to previously reported maximum value of 0.2 for Sb-doped Mg2Ge

Recent progress in magnesium-based thermoelectric materials

Magnesium-based thermoelectric materials (Mg2X, X = Si, Ge, Sn) are considered one of the most attractive groups for large-scale application, due to their materials’ high availability, low cost, low mass density and reasonably high efficiency. In this work, we present an overview of the recent developments relating to magnesium-based thermoelectric materials and review the current approaches towards high thermoelectric efficiency