6 research outputs found
Intraband memory function and memory-function conductivity formula in doped graphene
The generalized self-consistent field method is used to describe intraband
relaxation processes in a general multiband electronic system with presumably
weak residual electron-electron interactions. The resulting memory-function
conductivity formula is shown to have the same structure as the result of a
more accurate approach based on the quantum kinetic equation. The results are
applied to heavily doped and lightly doped graphene. It is shown that the
scattering of conduction electron by phonons leads to the redistribution of the
intraband conductivity spectral weight over a wide frequency range, however, in
a way consistent with the partial transverse conductivity sum rule. The present
form of the intraband memory function is found to describe correctly the
scattering by quantum fluctuations of the lattice, at variance with the
semiclassical Boltzmann transport equations, where this scattering channel is
absent. This is shown to be of fundamental importance in quantitative
understanding of the reflectivity data measured in lightly doped graphene as
well as in different low-dimensional strongly correlated electronic systems,
such as the cuprate superconductors.Comment: 14 pages, 7 figure
Experimental Electronic Structure and Interband Nesting in BaVS_3
The correlated 3d sulphide BaVS_3 is a most interesting compound because of
the apparent coexistence of one-dimensional and three-dimensional properties.
Our experiments explain this puzzle and shed new light on its electronic
structure. High-resolution angle-resolved photoemission measurements in a 4eV
wide range below the Fermi level explored the coexistence of weakly correlated
a_1g wide-band and strongly correlated e_g narrow-band d-electrons that is
responsible for the complicated behavior of this material. The most relevant
result is the evidence for a_1g--e_g inter-band nesting condition.Comment: 4 pages, 3 figure
Slave-Boson Three-Band Model with O-O Hopping for High-Tc Superconductors
Slave boson mean-field approximation is carried out analytically for weakly
doped CuO_2 conduction planes, characterized by Cu-O charge transfer energy
\Delta_{pd}, Cu-O hopping t_0, O-O hopping t' and repulsion U_d between holes
on Cu site taken as infinite. At zero doping \delta, finite negative
t',|t'|<t_0/2, expands the range of stability of the covalent, conducting state
on the expense of the insulating state which, however, remains stable at larger
\Delta_{pd}. For sufficiently large \Delta_{pd} the renormalized charge
transfer energy saturates at 4|t'| instead of decreasing to zero, as at t'=0
case. In contrast to t', finite \delta suppresses the insulating state nearly
symmetrically with respect to the sign of \delta. The regime with charge
transfer energy renormalized close to 4|t'| fits remarkably well the ARPES
spectra of Bi2212 and LSCO, and, in the latter case, explains the observed
strong doping dependence of the Cu-O hopping.Comment: 4 pages, 2 figure
Nonbonding oxygen holes and spinless scenario of magnetic response in doped cuprates
Both theoretical considerations and experimental data point to a more
complicated nature of the valence hole states in doped cuprates than it is
predicted by Zhang-Rice model. Actually, we deal with a competition of
conventional hybrid Cu 3d-O 2p state and purely
oxygen nonbonding state with symmetry. The latter
reveals a non-quenched Ising-like orbital moment that gives rise to a novel
spinless purely oxygen scenario of the magnetic response in doped cuprates with
the oxygen localized orbital magnetic moments of the order of tenths of Bohr
magneton. We consider the mechanism of Cu-O 2p transferred orbital
hyperfine interactions due to the mixing of the oxygen O 2p orbitals with Cu 3p
semicore orbitals. Quantitative estimates point to a large magnitude of the
respective contributions both to local field and electric field gradient, and
their correlated character.Comment: 7 pages, 1 figur