Periodicity-dependence of the ferroelectric properties in BiFeO3/SrTiO3 multiferroic superlattices

Artificial superlattices of (BiFeO3)m(SrTiO3)m (m= 1 to 10 unit cells) consisting of multiferroic BiFeO3 and insulating SrTiO3 layers were fabricated on (100)-oriented SrTiO3 substrates by pulsed laser ablation. The remnant polarization and leakage current behavior were studied varying the periodicity (8-80A) of the superlattice. The leakage current was reduced by few orders of magnitude on increase of periodicity compared to single layer BiFeO3 thin films. Reduced leakage and intrinsic polarization hysteresis was observed and was confirmed by PUND analysis for periodicities in the range 20-60A. The leakage current was observed to be dominated by space charge limited conductionComment: Submitted to Applied Physics Letter

Interfacial contribution to the dielectric response in semiconducting LaBiMn4/3Co2/3O6

Impedance measurements have been performed on a sintered polycrystalline sample of the perovskite LaBiMn4/3Co2/3O6. Colossal dielectric permittivity often is measured in this class of semiconducting materials as a result of extrinsic factors. Our results show that a large offset in the capacitance, measured on a series of samples with different thickness, is due to the interfacial polarization. This contribution then can be removed from the data, creating a general procedure for dielectric measurements in semiconducting samples.Comment: 13 pages, 4 figure

Pure down-conversion photons through sub-coherence length domain engineering

Photonic quantum technology relies on efficient sources of coherent single photons, the ideal carriers of quantum information. Heralded single photons from parametric down-conversion can approximate on-demand single photons to a desired degree, with high spectral purities achieved through group-velocity matching and tailored crystal nonlinearities. Here we propose crystal nonlinearity engineering techniques with sub-coherence-length domains. We first introduce a combination of two existing methods: a deterministic approach with coherence-length domains and probabilistic domain-width annealing. We then show how the same deterministic domain-flip approach can be implemented with sub-coherence length domains. Both of these complementary techniques create highly pure photons, outperforming previous methods, in particular for short nonlinear crystals matched to femtosecond lasers.Comment: 12 pages, 4 figures. Minor update to Fig.

Three terminal capacitance technique for magnetostriction and thermal expansion measurements

An instrument has been constructed to measure a large range of magnetostriction and thermal expansion between room temperature and 4 K in a superconductive split-coil magnet, that allows investigation in magnetic fields up to 12 T. The very small bulk samples (up to 1 mm in size) as well as big ones (up to 13 mm) of the irregular form can be measured. The possibility of magnetostriction investigation in thin films is shown. A general account is given of both electrical and the mechanical aspects of the design of capacitance cell and their associated electronic circuitry. A simple lever device is proposed to increase the sensitivity twice. The resulting obtained sensitivity can be 0.5 Angstrom. The performance of the technique is illustrated by some preliminary measurements of the magnetostriction of superconducting MgB2, thermal expansion of (La0.8Ba0.2)0.93MnO3 single crystal and magnetoelastic behavior of the Ni/Si(111) and La0.7Sr0.3CoO3/SAT0.7CAT0.1LA0.2(001) cantilevers.Comment: 6 pages, 6 figures, journal pape

Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3

We present a magnetoresistive-photoresistive device based on the interaction of a piezomagnetic CoFe thin film with a photostrictive BiFeO3 substrate that undergoes light-induced strain. The magnitude of the resistance and magnetoresistance in the CoFe film can be controlled by the wavelength of the incident light on the BiFeO3. Moreover, a light-induced decrease in anisotropic magnetoresistance is detected due to an additional magnetoelastic contribution to magnetic anisotropy of the CoFe film. This effect may find applications in photo-sensing systems, wavelength detectors and can possibly open a research development in light-controlled magnetic switching properties for next generation magnetoresistive memory devices.Comment: 5 pages, 4 figures, journal pape

Ferromagnetism and magneto-dielectric effect in insulating LaBiMn4/3Co2/3O6 thin films

High quality epitaxial thin films of LaBiMn4/3Co2/3O6 perovskite were fabricated on (001)-oriented SrTiO3 and LaAlO3 substrates by the pulsed laser deposition technique. Magnetization measurements reveal a strong magnetic anisotropy and a ferromagnetic behavior that is in agreement with a super-exchange interaction between Mn4+ and Co2+ ions, which are randomly distributed in the B-site. A distinct anomaly is observed in the dielectric measurements at 130K corresponding to the onset of the magnetic ordering, suggesting a coupling. Above this temperature, the extrinsic Maxwell-Wagner effect is dominating. Theses results are explained using the Raman spectroscopic studies indicating a weak spin-lattice interaction around this magnetic transition.Comment: Submitted to Appl. Phys. Lett. (2008

A Multiferroic Ceramic with Perovskite Structure: La0.5Bi0.5Mn0.5Fe0.5O3.09

ABO3 perovskite multiferroic La0.5Bi0.5Mn0.5Fe0.5O3.09 where the B-site cations is responsible for the magnetic properties and the A-site cation with lone pair electron is responsible for the ferroelectric properties was synthesized at normal conditions. This oxide exhibits a ferromagnetic transition around 240 K with a well defined hysteresis loop, and a significant reversible remnant polarization below 67K similar to ferroelectric behavior. The magnetic interaction is interpreted by the ferromagnetic Fe3+-O-Mn3+ and antiferromagnetic Fe3+(Mn3+)-O-Fe3+(Mn3+) interactions competed each other, whereas the ferroelectricity is predominantly due to the polar nature introduced by the 6s2 lone pair of Bi3+ cationsComment: Submitted to Applied Physics Letters, 7 pages, 3 figure

Magnetoelectric coupling in polycrystalline FeVO4

We report coupling between magnetic and electric orders for antiferromagnetic polycrystalline FeVO4 in which magnetism-induced polarization has been recently found in noncollinear antiferromagnetic state below the second antiferromagnetic phase transition at TN2=15.7K. In this low symmetry phase space group P-1, the magnetic field dependence of electric polarization evidences a clear magnetoelectric coupling in the noncollinear spin-configured antiferromagnetic phase. The discontinuity of magnetodielectric effect observed at the vicinity of the polar to nonpolar transition evidences competition between different magnetodielectric couplings in the two different antiferromagnetic states. The existence of thermal expansion anomaly near TN2 and magnetostriction effect support magnetoelastically mediated scenario of the observed magnetoelectric effect.Comment: 4 pages, 6 figures, Phys. Rev. B 80, 172103 (2009