Optical absorption in semiconductor quantum dots: Nonlocal effects

The optical absorption of a single spherical semiconductor quantum dot in an electrical field is studied taking into account the nonlocal coupling between the field of the light and the polarizability of the semiconductor. These nonlocal effects lead to a small size anf field dependent shift and broadening of the excitonic resonance which may be of interest in future high precision experiments.Comment: 6 pages, 4 figure

An entangled two photon source using biexciton emission of an asymmetric quantum dot in a cavity

A semiconductor based scheme has been proposed for generating entangled photon pairs from the radiative decay of an electrically-pumped biexciton in a quantum dot. Symmetric dots produce polarisation entanglement, but experimentally-realised asymmetric dots produce photons entangled in both polarisation and frequency. In this work, we investigate the possibility of erasing the `which-path' information contained in the frequencies of the photons produced by asymmetric quantum dots to recover polarisation-entangled photons. We consider a biexciton with non-degenerate intermediate excitonic states in a leaky optical cavity with pairs of degenerate cavity modes close to the non-degenerate exciton transition frequencies. An open quantum system approach is used to compute the polarisation entanglement of the two-photon state after it escapes from the cavity, measured by the visibility of two-photon interference fringes. We explicitly relate the two-photon visibility to the degree of Bell-inequality violation, deriving a threshold at which Bell-inequality violations will be observed. Our results show that an ideal cavity will produce maximally polarisation-entangled photon pairs, and even a non-ideal cavity will produce partially entangled photon pairs capable of violating a Bell-inequality.Comment: 16 pages, 10 figures, submitted to PR

Spin and energy transfer in nanocrystals without transport of charge

We describe a mechanism of spin transfer between individual quantum dots that does not require tunneling. Incident circularly-polarized photons create inter-band excitons with non-zero electron spin in the first quantum dot. When the quantum-dot pair is properly designed, this excitation can be transferred to the neighboring dot via the Coulomb interaction with either {\it conservation} or {\it flipping} of the electron spin. The second dot can radiate circularly-polarized photons at lower energy. Selection rules for spin transfer are determined by the resonant conditions and by the strong spin-orbit interaction in the valence band of nanocrystals. Coulomb-induced energy and spin transfer in pairs and chains of dots can become very efficient under resonant conditions. The electron can preserve its spin orientation even in randomly-oriented nanocrystals.Comment: 13 pages, 3 figure

Entangled Photons from Small Quantum Dots

We discuss level schemes of small quantum-dot turnstiles and their applicability in the production of entanglement in two-photon emission. Due to the large energy splitting of the single-electron levels, only one single electron level and one single hole level can be made resonant with the levels in the conduction band and valence band. This results in a model with nine distinct levels, which are split by the Coulomb interactions. We show that the optical selection rules are different for flat and tall cylindrically symmetric dots, and how this affects the quality of the entanglement generated in the decay of the biexciton state. The effect of charge carrier tunneling and of a resonant cavity is included in the model.Comment: 10 pages, 8 figure

Polarization-Correlated Photon Pairs from a Single Quantum Dot

Polarization correlation in a linear basis, but not entanglement, is observed between the biexciton and single-exciton photons emitted by a single InAs quantum dot in a two-photon cascade. The results are well described quantitatively by a probabilistic model that includes two decay paths for a biexciton through a non-degenerate pair of one-exciton states, with the polarization of the emitted photons depending on the decay path. The results show that spin non-degeneracy due to quantum-dot asymmetry is a significant obstacle to the realization of an entangled-photon generation device.Comment: 4 pages, 4 figures, revised discussio

Sub-microsecond correlations in photoluminescence from InAs quantum dots

Photon correlation measurements reveal memory effects in the optical emission of single InAs quantum dots with timescales from 10 to 800 ns. With above-band optical excitation, a long-timescale negative correlation (antibunching) is observed, while with quasi-resonant excitation, a positive correlation (blinking) is observed. A simple model based on long-lived charged states is presented that approximately explains the observed behavior, providing insight into the excitation process. Such memory effects can limit the internal efficiency of light emitters based on single quantum dots, and could also be problematic for proposed quantum-computation schemes.Comment: 8 pages, 8 figure

Nonlinear polaritons in a monolayer semiconductor coupled to optical bound states in the continuum

Optical bound states in the continuum (BICs) provide a way to engineer very narrow resonances in photonic crystals. The extended interaction time in these systems is particularly promising for the enhancement of nonlinear optical processes and the development of the next generation of active optical devices. However, the achievable interaction strength is limited by the purely photonic character of optical BICs. Here, we mix the optical BIC in a photonic crystal slab with excitons in the atomically thin semiconductor MoSe2 to form nonlinear exciton-polaritons with a Rabi splitting of 27 meV, exhibiting large interaction-induced spectral blueshifts. The asymptotic BIC-like suppression of polariton radiation into the far field toward the BIC wavevector, in combination with effective reduction of the excitonic disorder through motional narrowing, results in small polariton linewidths below 3 meV. Together with a strongly wavevector-dependent Q-factor, this provides for the enhancement and control of polariton–polariton interactions and the resulting nonlinear optical effects, paving the way toward tuneable BIC-based polaritonic devices for sensing, lasing, and nonlinear optics

Design and modeling of a transistor vertical-cavity surface-emitting laser

A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The important physical models and parameters are discussed and validated by modeling a conventional VCSEL and comparing the results with the experiment. The quantum capture/escape process is simulated using the quantum-trap model and shows a significant effect on the electrical output of the T-VCSEL. The parameters extracted from the numerical simulation are imported into the analytic modeling to predict the frequency response and simulate the large-signal modulation up to 40 Gbps