51 research outputs found

    Energy-Momentum dispersion relation of plasmarons in bilayer graphene

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    The relation between the energy and momentum of plasmarons in bilayer graphene is investigated within the Overhauser approach, where the electron-plasmon interaction is described as a field theoretical problem. We find that the Dirac-like spectrum is shifted by ΔE(k)100÷150meV\Delta E(\mathbf{k})\sim 100\div150\,{\rm meV} depending on the electron concentration nen_{e} and electron momentum. The shift increases with electron concentration as the energy of plasmons becomes larger. The dispersion of plasmarons is more pronounced than in the case of single layer graphene, which is explained by the fact that the energy dispersion of electrons is quadratic and not linear. We expect that these predictions can be verified using angle-resolved photoemission spectroscopy (ARPES).Comment: 4 pages, 3 figure

    Plasmons and their interaction with electrons in trilayer graphene

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    The interaction between electrons and plasmons in trilayer graphene is investigated within the Overhauser approach resulting in the 'plasmaron' quasi-particle. This interaction is cast into a field theoretical problem, nd its effect on the energy spectrum is calculated using improved Wigner-Brillouin perturbation theory. The plasmaron spectrum is shifted with respect to the bare electron spectrum by ΔE(k)50÷200meV\Delta E(\mathbf{k})\sim 50\div200\,{\rm meV} for ABC stacked trilayer graphene and for ABA trilayer graphene by ΔE(k)30÷150meV\Delta E(\mathbf{k})\sim 30\div150\,{\rm meV} (ΔE(k)1÷5meV\Delta E(\mathbf{k})\sim 1\div5\,{\rm meV}) for the hyperbolic linear) part of the spectrum. The shift in general increases with the electron concentration nen_{e} and electron momentum. The dispersion of plasmarons is more pronounced in \textit{ABC} stacked than in ABA tacked trilayer graphene, because of the different energy band structure and their different plasmon dispersion.Comment: arXiv admin note: substantial text overlap with arXiv:1310.623

    Ballistic transport through graphene nanostructures of velocity and potential barriers

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    We investigate the electronic properties of graphene nanostructures when the Fermi velocity and the electrostatic potential vary in space. First, we consider the transmission T and conductance G through single and double barriers. We show that G for velocity barriers differs markedly from that for potential barriers for energies below the height of the latter and it exhibits periodic oscillations as a function of the energy for strong velocity modulation. Special attention is given to superlattices (SLs). It is shown that an applied bias can efficiently widen or shrink the allowed minibands of velocity-modulated SLs. The spectrum in the Kronig–Penney limit is periodic in the strength of the barriers. Collimation of an electron beam incident on an SL with velocity and potential barriers is present but it disappears when the potential barriers are absent. The number of additional Dirac points may change considerably if barriers and wells have sufficiently different Fermi velocities

    Integral quantum Hall effect in graphene: Zero and finite Hall field

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    We study the influence of a finite Hall field EH on the Hall conductivity σyx in graphene. Analytical expressions are derived for σyx using the Kubo-Greenwood formula. For vanishing EH, we obtain the well-known expression σyx=4(N+1/2)e2/h. The inclusion of the dispersion of the energy levels, previously not considered, and their width, due to scattering by impurities, produces the plateau of the n=0 Landau level. Further, we evaluate the longitudinal resistivity ρxx and show that it exhibits an oscillatory behavior with the electron concentration. The peak values of ρxx depend strongly on the impurity concentration and their potential. For a finite EH, the result for σyx is the same as that for EH=0, provided EH is not strong, but the values and positions of the resistivity maxima are modified due to the EH-dependent dispersion of the energy levels

    Transport properties of low-dimensional semiconductor structures in the presence of spin–orbit interaction

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    Transport properties of a two-dimensional electron gas (2DEG) and of quantum wires are theoretically studied in the presence of both Rashba and Dresselhaus terms of the spin–orbit interaction (SOI). Fully quantum mechanical expressions for the conductivity are evaluated for very low temperatures and the differences between them and previous semiclassical results are highlighted. Two kinds of confining potentials in quantum wires are considered, square-type and parabolic. Various cases depending on the relative strengths of two different SOI terms are discussed and the relaxation times for various impurity potentials are evaluated. In addition, the spin accumulation in a 2DEG and in a quantum wire (QW) is evaluated semiclassically and its dependence on the Fermi energy and the SOI strengths is discussed. A nearly saw-tooth dependence on the electron concentration is obtained for a QW with parabolic confinement

    Combined approach of density functional theory and quantum Monte Carlo method to electron correlation in dilute magnetic semiconductors

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    We present a realistic study for electronic and magnetic properties in dilute magnetic semiconductor (Ga,Mn)As. A multi-orbital Haldane-Anderson model parameterized by density-functional calculations is presented and solved with the Hirsch-Fye quantum Monte Carlo algorithm. Results well reproduce experimental results in the dilute limit. When the chemical potential is located between the top of the valence band and an impurity bound state, a long-range ferromagnetic correlations between the impurities, mediated by antiferromagnetic impurity-host couplings, are drastically developed. We observe an anisotropic character in local density of states at the impurity-bound-state energy, which is consistent with the STM measurements. The presented combined approach thus offers a firm starting point for realistic calculations of the various family of dilute magnetic semiconductors.Comment: 5 pages, 4 figure

    New high-speed centre of mass method incorporating background subtraction for accurate determination of fluorescence lifetime

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    We demonstrate an implementation of a centre-of-mass method (CMM) incorporating background subtraction for use in multifocal fluorescence lifetime imaging microscopy to accurately determine fluorescence lifetime in live cell imaging using the Megaframe camera. The inclusion of background subtraction solves one of the major issues associated with centre-of-mass approaches, namely the sensitivity of the algorithm to background signal. The algorithm, which is predominantly implemented in hardware, provides real-time lifetime output and allows the user to effectively condense large amounts of photon data. Instead of requiring the transfer of thousands of photon arrival times, the lifetime is simply represented by one value which allows the system to collect data up to limit of pulse pile-up without any limitations on data transfer rates. In order to evaluate the performance of this new CMM algorithm with existing techniques (i.e. Rapid lifetime determination and Levenburg-Marquardt), we imaged live MCF-7 human breast carcinoma cells transiently transfected with FRET standards. We show that, it offers significant advantages in terms of lifetime accuracy and insensitivity to variability in dark count rate (DCR) between Megaframe camera pixels. Unlike other algorithms no prior knowledge of the expected lifetime is required to perform lifetime determination. The ability of this technique to provide real-time lifetime readout makes it extremely useful for a number of applications

    Instrumentation for fluorescence lifetime measurement using photon counting

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    We describe the evolution of HORIBA Jobin Yvon IBH Ltd, and its time-correlated single-photon counting (TCSPC) products, from university research beginnings through to its present place as a market leader in fluorescence lifetime spectroscopy. The company philosophy is to ensure leading-edge research capabilities continue to be incorporated into instruments in order to meet the needs of the diverse range of customer applications, which span a multitude of scientific and engineering disciplines. We illustrate some of the range of activities of a scientific instrument company in meeting this goal and highlight by way of an exemplar the performance of the versatile DeltaFlex instrument in measuring fluorescence lifetimes. This includes resolving fluorescence lifetimes down to 5 ps, as frequently observed in energy transfer, nanoparticle metrology with sub-nanometre resolution and measuring a fluorescence lifetime in as little as 60 μs for the study of transient species and kinetics

    Semiconductor Spintronics

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    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.Comment: tutorial review; 342 pages, 132 figure
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