Spin-Spin Asymmetries in Large Transverse Momentum Higgs Boson Production

We examine the spin-dependence of standard model Higgs boson production at large transverse momentum via the processes $gg \rightarrow gH^0$, $qg \rightarrow qH^0$, and $q\overline{q} \rightarrow gH^0$. The partonic level spin-spin asymmetries ($\hat{a}_{LL}$) for these processes are large at SSC/LHC energies.Comment: 10 pages, 4 figures (not included), LaTeX; PSU/TH/113, MAD/PH/70

Collapsing Layers on Schwarzschild-Lemaitre Geodesics

We discuss Israel layers collapsing inward from rest at infinity along Schwarzschild-Lemaitre geodesics. The dynamics of the collapsing layer and its equation of state are developed. There is a general equation of state which is approximately polytropic in the limit of very low pressure. The equation of state establishes a new limit on the stress-density ratio.Comment: To appear in Phys. Rev. D 1

Radiation and String Atmosphere for Relativistic Stars

We extend the Vaidya radiating metric to include both a radiation field and a string fluid. Assuming diffusive transport for the string fluid, we find new analytic solutions of Einstein's field equations. Our new solutions represent an extention of Xanthopoulos superposition.Comment: To appear in Phys. Rev. D, Rapid Communicatio

Evidence of Annealing Effects on a High-Density Si/SiO2 Interfacial Layer

Thermally grown Si(001)/SiO$_2$ samples were studied by x-ray reflectivity. Fits of model electron density profiles to the data reveal the existence of an interfacial layer at the Si/SiO$_2$ interface up to 15-Å-thick, with density higher than either the crystalline Si or the main oxide layer. This density of the layer is reduced by a postoxidation anneal.Engineering and Applied Science

Understanding the complex phase diagram of uranium: the role of electron-phonon coupling

We report an experimental determination of the dispersion of the soft phonon mode along [1,0,0] in uranium as a function of pressure. The energies of these phonons increase rapidly, with conventional behavior found by 20 GPa, as predicted by recent theory. New calculations demonstrate the strong pressure (and momentum) dependence of the electron-phonon coupling, whereas the Fermi-surface nesting is surprisingly independent of pressure. This allows a full understanding of the complex phase diagram of uranium, and the interplay between the charge-density wave and superconductivity

Levi-Civita cylinders with fractional angular deficit

The angular deficit factor in the Levi-Civita vacuum metric has been parametrized using a Riemann-Liouville fractional integral. This introduces a new parameter into the general relativistic cylinder description, the fractional index {\alpha}. When the fractional index is continued into the negative {\alpha} region, new behavior is found in the Gott-Hiscock cylinder and in an Israel shell.Comment: 5 figure

Solution generating with perfect fluids

We apply a technique, due to Stephani, for generating solutions of the Einstein-perfect fluid equations. This technique is similar to the vacuum solution generating techniques of Ehlers, Harrison, Geroch and others. We start with a ``seed'' solution of the Einstein-perfect fluid equations with a Killing vector. The seed solution must either have (i) a spacelike Killing vector and equation of state P=rho or (ii) a timelike Killing vector and equation of state rho+3P=0. The new solution generated by this technique then has the same Killing vector and the same equation of state. We choose several simple seed solutions with these equations of state and where the Killing vector has no twist. The new solutions are twisting versions of the seed solutions

Mechanisms of heavy-ion induced gate rupture in thin oxides

Single event gate rupture (SEGR) is a catastrophic failure mode that occurs in dielectric materials that are struck by energetic heavy ions while biased under a high electric field condition. SEGR can reduce the critical electric field to breakdown to less than half the value observed in normal voltage ramp reliability tests. As electric fields in gate oxides increase to greater than 5 MV/cm in advanced MOS technologies, the impact of SEGR on the reliability of space based electronics must be assessed. In this summary, the authors explore the nature of SEGR in oxides with thickness from 7 nm to less than 5 nm, where soft breakdown is often observed during traditional reliability tests. They discuss the possible connection between the present understanding of SEGR and voltage stress breakdown models