136 research outputs found
Chapter Interlayer Processing in Active Matrix OLED Displays
Medical genetic
AMOLED Displays with In-Pixel Photodetector
The focus of this chapter is to consider additional functionalities beyond the regular display function of an active matrix organic light-emitting diode (AMOLED) display. We will discuss how to improve the resolution of the array with OLED lithography pushing to AR/VR standards. Also, the chapter will give an insight into pixel design and layout with a strong focus on high resolution, enabling open areas in pixels for additional functionalities. An example of such additional functionalities would be to include a photodetector in pixel, requiring the need to include in-panel TFT readout at the peripherals of the full-display sensor array for applications such as finger and palmprint sensing
Low-temperature and low-voltage, solution-processed metal oxide n-TFTs and flexible circuitry on large-area polyimide foil
In this article, we report on high-performance solution-based n-type metal oxide TFTs processed directly on polyimide foil and annealed at 250 °C. Saturation mobilities exceeding 2 cm²/(Vs) and Ion/Ioff ratios beyond 108 have been achieved. Using these oxide n-TFTs, fast and low-voltage flexible circuitry is presented. Furthermore, a complete 8-bit RFID transponder chip, containing 294 oxide n-TFTs has been fabricated. Both high-speed and low-voltage operation makes the presented oxide n-TFT technology suited for both the pixel driving and embedded line-drive circuitry at the borders of flexible AMOLED displays
A conformable active matrix LED display
Conformable and stretchable displays can be integrated on complex surfaces. Such a display can assume the shape of a conformed surface by simultaneous multi-dimensional stretching and bending. Such technology provides new opportunities in the field of display applications, for example wearable displays integrated or embedded in a textile or onto complex surfaces in automotive interiors. In this work we present a conformable active matrix display using LEDs mounted on an amorphous Indium-Gallium-Zinc Oxide (a-IGZO) TFT backplane. A two-transistor and one capacitor (2T-1C) pixel engine based backplane, fabricated on polyimide substrate, is used to drive LEDs. Rigid LED pixels are connected via meandered copper film. The meander interconnections have been optimized with respect to their electrical and mechanical properties to provide a display with a 2 mm pitch between the pixels and good conformability. At an operating supply voltage of 7 V, the average brightness of the display exceeds 170 cd/m2
IEEE Open Journal of the Solid-State Circuits Society Special Section on <italic>Integrated Circuits and Systems Based on Thin-Film Transistors</italic>
Thin-Film transistors (TFTs) are ubiquitous today as a backplane technology for various display and imager products. Those transistors act as switches in active-matrix liquid-crystal displays (AM-LCDs) or as full-pixel engines, including driving and threshold compensation, in active-matrix organic light-emitting diodes (AM-OLEDs) panels. TFT manufacturing requires only a limited amount of photolithographic steps, making it a relatively simple transistor technology, compared to the traditional Si CMOS technologies. The processing temperature of TFT technologies is sufficiently low to be compatible with glass and can even enable flexible substrates. Finally, these transistors have been developed specifically for large-area applications, such as televisions and X-ray scanners. Consequently, the backplane size for TFTs has evolved from the generation-1 glass panel of 270 mm by 360 mm to generation-10.5, which is manufactured on a glass panel of 2.94 m m [1]. This is profoundly different from traditional Si CMOS integrated circuits, which are fabricated nowadays on 200 mm or 300 mm round wafers. The critical dimension of the TFT technology on glass or flexible substrate in production is in the range of a few micrometers. The TFT research in the display field focuses on enabling increasingly better pixel resolution, improved visual quality, larger panels for LED walls, flexible displays, camera-behind display, sensor integration, and many more
An All LTPS-TFT-Based Charge-Integrating Amplifier for Sensor-Array Readout Circuit on Flexible Substrate
This article presents the design of a readout circuit for charge-output sensor arrays integrated on a flexible substrate. The charge-integrating amplifier is built with a current-output transimpedance amplifier that includes the integrator function with reset. The charge-integrating amplifier has a fully differential internal topology, improving over single-ended design, including the feedback amplifier implemented specifically as a Nauta-transconductor. The readout circuit has been manufactured in a 3- low-temperature polysilicon process on foil and measured, achieving a bandwidth of 200 kHz, operation at a 5-V supply while consuming 586- power and maintaining a maximum integral nonlinearity of 5%
Robust design of digital circuits on foil
A practical guide to the theory and applications of TFT technologies and circuit designs for those in academia and in industry
Design and manufacturing of organic RFID circuits Coping with intrinsic parameter variations in organic devices by circuit design
A detailed study of device characteristics and parameter variations of organic transistors on foil leads to the conclusion that design of p-type only digital circuits needs to focus on optimal yield, rather than on speed. From this perspective, subsequent generations of organic RFID tags have been realized, by increasing complexity (from 64 bit to 128 bit code generators), by adding functionality (Manchester encoding, anti-collision protocols), and by increasing data rate of the generated ID code (from 752 bits per second towards 50 kbit per second). As such, each of the requirements towards EPC compatible organic RFID tags is shown independently in code generators on foil, but not yet in a single RFID tag.status: publishe
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