High-speed high-efficiency resonant cavity enhanced photodiodes

In this paper, we review our research efforts on RCE high-speed high-efficiency p-i-n and Schottky photodiodes. Using a microwave compatible planar fabrication process, we have designed and fabricated GaAs based RCE photodiodes. For RCE Schottky photodiodes, we have achieved a peak quantum efficiency of 50% along with a 3-dB bandwidth of 100 GHz. The tunability of the detectors via a recess etch is also demonstrated. For p-i-n type photodiodes, we have fabricated and tested widely tunable devices with near 100% quantum efficiencies, along with a 3-dB bandwidth of 50 GHz. Both of these results correspond to the fastest RCE photodetectors published in scientific literature

Three dimensional optical manipulation and structural imaging of soft materials by use of laser tweezers and multimodal nonlinear microscopy

We develop an integrated system of holographic optical trapping and multimodal nonlinear microscopy and perform simultaneous three-dimensional optical manipulation and non-invasive structural imaging of composite soft-matter systems. We combine different nonlinear microscopy techniques such as coherent anti-Stokes Raman scattering, multi-photon excitation fluorescence and multi-harmonic generation, and use them for visualization of long-range molecular order in soft materials by means of their polarized excitation and detection. The combined system enables us to accomplish both, manipulation in composite soft materials such as colloidal inclusions in liquid crystals as well as imaging of each separate constituents of the composite material in different nonlinear optical modalities. We also demonstrate optical generation and control of topological defects and simultaneous reconstruction of their three-dimensional long-range molecular orientational patterns from the nonlinear optical images

Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG

Characterization of Sub-Monolayer Contaminants at the Regrowth Interface in GaN Nanowires Grown by Selective-Area Molecular Beam Epitaxy

While GaN nanowires (NWs) offer an attractive architecture for a variety of nanoscale optical, electronic, and mechanical devices, defects such as crystal polarity inversion domains (IDs) can limit device performance. Moreover, the formation of such defects during NW growth is not fully understood. In this study, we use transmission electron microscopy (TEM) and atom probe tomography (APT) to investigate the effects of sub-monolayer contamination at the regrowth interface in GaN NWs grown by selective-area molecular beam epitaxy (MBE). TEM energy dispersive X-ray spectroscopy (EDS) and APT independently identified Al and O contamination localized at the regrowth interface in two of the three growth runs examined. The Al and O concentrations were each estimated to be on the order of 11% of an ideal c-plane monolayer in the most severely contaminated case. The amount of contamination correlated with the number of crystal polarity inversion domain defects (IDs) across the growth runs. A growth run in which the pre-regrowth HF vapor etch step was replaced by HCl immersion showed the smallest quantity of O and no measurable Al. In addition, many of the NWs examined from the HCl-treated growth run turned out to be free of IDs. These results suggest that sub-monolayer contamination introduced during processing contributes to defect formation in MBE-grown GaN NWs

Three-dimensional imaging of liquid crystal structures and defects by means of holographic manipulation of colloidal nanowires with faceted sidewalls

We use nanowires with faceted sidewalls for mapping of the patterns of three-dimensional orientational order and defect structures. In chiral nematics, the nanowires follow the local average orientation of rod-shaped molecules. When spatially translated by use of holographic optical tweezers in three dimensions, they mediate direct nondestructive visualization of the helicoidal ground-state structures, edge and screw dislocations, and kinks, as well as enable non-contact manipulation of these defects. We probe interactions of faceted nanowires with different defects and demonstrate their spontaneous self-alignment along the cores of singular defect lines

Unconventional structure-assisted optical manipulation of high-index nanowires in liquid crystals

Stable optical trapping and manipulation of high-index particles in low-index host media is often impossible due to the dominance of scattering forces over gradient forces. Here we explore optical manipulation in liquid crystalline structured hosts and show that robust optical manipulation of high-index particles, such as GaN nanowires, is enabled by laser-induced distortions in long-range molecular alignment, via coupling of translational and rotational motions due to helicoidal molecular arrangement, or due to elastic repulsive interactions with confining substrates. Anisotropy of the viscoelastic liquid crystal medium and particle shape give rise to a number of robust unconventional trapping capabilities, which we use to characterize defect structures and study rheological properties of various thermotropic liquid crystals

Media 6: Unconventional structure-assisted optical manipulation of high-index nanowires in liquid crystals

Originally published in Optics Express on 26 March 2012 (oe-20-7-7741