5,987 research outputs found

    NMR shieldings from density functional perturbation theory: GIPAW versus all-electron calculations

    Get PDF
    We present a benchmark of the density functional linear response calculation of NMR shieldings within the Gauge-Including Projector-Augmented-Wave method against all-electron Augmented-Plane-Wave++local-orbital and uncontracted Gaussian basis set results for NMR shieldings in molecular and solid state systems. In general, excellent agreement between the aforementioned methods is obtained. Scalar relativistic effects are shown to be quite large for nuclei in molecules in the deshielded limit. The small component makes up a substantial part of the relativistic corrections.Comment: 3 figures, supplementary material include

    Quasiparticle band structure based on a generalized Kohn-Sham scheme

    Full text link
    We present a comparative full-potential study of generalized Kohn-Sham schemes (gKS) with explicit focus on their suitability as starting point for the solution of the quasiparticle equation. We compare G0W0G_0W_0 quasiparticle band structures calculated upon LDA, sX, HSE03, PBE0, and HF functionals for exchange and correlation (XC) for Si, InN and ZnO. Furthermore, the HSE03 functional is studied and compared to the GGA for 15 non-metallic materials for its use as a starting point in the calculation of quasiparticle excitation energies. For this case, also the effects of selfconsistency in the GWGW self-energy are analysed. It is shown that the use of a gKS scheme as a starting point for a perturbative QP correction can improve upon the deficiencies found for LDA or GGA staring points for compounds with shallow dd bands. For these solids, the order of the valence and conduction bands is often inverted using local or semi-local approximations for XC, which makes perturbative G0W0G_0W_0 calculations unreliable. The use of a gKS starting point allows for the calculation of fairly accurate band gaps even in these difficult cases, and generally single-shot G0W0G_0W_0 calculations following calculations using the HSE03 functional are very close to experiment

    Structural, electronic and magnetic properties of SrRuO3_3 under epitaxial strain

    Full text link
    Using density functional theory within the local spin density approximation, structural, electronic and magnetic properties of SRO are investigated. We examine the magnitude of the orthorhombic distortion in the ground state and also the effects of applying epitaxial constraints, whereby the influence of large (in the range of ±4\pm 4%) in-plane strain resulting from coherent epitaxy, for both [001] and [110] oriented films, have been isolated and investigated. The overall pattern of the structural relaxations reveal coherent distortions of the oxygen octahedra network, which determine stability of the magnetic moment on the Ru ion. The structural and magnetic parameters exhibit substantial changes allowing us to discuss the role of symmetry and possibilities of magneto-structural tuning of \SRO-based thin film structures.Comment: 11 page

    Geometrical and electronic structures of the (5, 3) single-walled gold nanotube from first-principles calculations

    Full text link
    The geometrical and electronic structures of the 4 {\AA} diameter perfect and deformed (5, 3) single-walled gold nanotube (SWGT) have been studied based upon the density-functional theory in the local-density approximation (LDA). The calculated relaxed geometries show clearly significant deviations from those of the ideally rolled triangular gold sheet. It is found that the different strains have different effects on the electronic structures and density of states of the SWGTs. And the small shear strain can reduce the binding energy per gold atom of the deformed SWGT, which is consistent with the experimentally observed result. Finally, we found the finite SWGT can show the metal-semiconductor transition.Comment: 11 pages, 4 figure

    Electronic structure of the (111) and (-1-1-1) surfaces of cubic BN: A local-density-functional ab initio study

    Full text link
    We present ab initio local-density-functional electronic structure calculations for the (111) and (-1-1-1) surfaces of cubic BN. The energetically stable reconstructions, namely the N adatom, N3 triangle models on the (111), the (2x1), boron and nitrogen triangle patterns on the (-1-1-1) surface are investigated. Band structure and properties of the surface states are discussed in detail.Comment: 8 pages, 12 figure

    Structural and Superconducting Transitions in Mg_{1-x}Al_{x}B_2

    Full text link
    From systematic ab initio calculations of the alloy system Mg_{1-x}Al_{x}B_2, we find a strong tendency for the formation of a superstructure characterized by Al-rich layers. We also present a simple model, based on calculated energies and an estimate of the configurational entropy, which suggests that the alloy has two separate concentration regimes of phase separation, with critical points near x = 0.25 and x = 0.75. These results, together with calculations of electronic densities of states in several ionic arrangements, give a qualitative explanation for the observed structural instabilities, as well as the x-dependence of the superconducting T_c for x<0.6.Comment: 4 pp./4 figs.; revisions in responce to Referee comment

    Uniaxial Phase Transition in Si : Ab initio Calculations

    Full text link
    Based on a previously proposed thermodynamic analysis, we study the relative stabilities of five Si phases under uniaxial compression using ab initio methods. The five phases are diamond, beta-tin, sh, sc, and hcp structures. The possible phase-transition patterns were investigated by considering the phase transitions between any two chosen phases of the five phases. By analyzing the different conributions to the relative pahse stability, we identified the most important factors in reducing the phase-transition pressures at uniaxial compression. We also show that it is possible to have phase transitions occur only when the phases are under uniaxial compression, in spite of no phase transition when under hydrostatic commpression. Taking all five phases into consideration, the phase diagram at uniaxial compression was constructed for pressures under 20 GPa. The stable phases were found to be diamond, beta-tin and sh structures, i.e. the same as those when under hydrostatic condition. According to the phase diagram, direct phase transition from the diamond to the sh phase is possible if the applied uniaxial pressures, on increasing, satisfy the condition of Px>Pz. Simiilarly, the sh-to-beta-tin transition on increeasing pressures is also possible if the applied uniaxial pressures are varied from the condition of Px>Pz, on which the phase of sh is stable, to that of Px<Pz, on which the beta-tin is stable

    Three-dimensional MgB2_{2}-type superconductivity in hole-doped diamond

    Full text link
    We substantiate by calculations that the recently discovered superconductivity below 4 K in 3% boron-doped diamond is caused by electron-phonon coupling of the same type as in MgB2_2, albeit in 3 dimensions. Holes at the top of the zone-centered, degenerate σ\sigma-bonding valence band couple strongly to the optical bond-stretching modes. The increase from 2 to 3 dimensions reduces the mode-softening crucial for TcT_{c} reaching 40 K in MgB2._{2}. Even if diamond had the same \emph{bare} coupling constant as MgB2,_{2}, which could be achieved with 10% doping, TcT_{c} would only be 25 K. Superconductivity above 1 K in Si (Ge) requires hole-doping beyond 5% (10%).Comment: revised version, accepted by PR

    The Structure of the [Zn_In - V_P] Defect Complex in Zn Doped InP

    Get PDF
    We study the structure, the formation and binding energies and the transfer levels of the zinc-phosphorus vacancy complex [Zn_In - V_P] in Zn doped p-type InP, as a function of the charge, using plane wave ab initio DFT-LDA calculations in a 64 atom supercell. We find a binding energy of 0.39 eV for the complex, which is neutral in p-type material, the 0/-1 transfer level lying 0.50 eV above the valence band edge, all in agreement with recent positron annihilation experiments. This indicates that, whilst the formation of phosphorus vacancies (V_P) may be involved in carrier compensation in heavily Zn doped material, the formation of Zn-vacancy complexes is not. Regarding the structure: for charge states Q=+6 to -4 the Zn atom is in an sp^2 bonded DX position and electrons added/removed go to/come from the remaining dangling bonds on the triangle of In atoms. This reduces the effective vacancy volume monatonically as electrons are added to the complex, also in agreement with experiment. The reduction occurs through a combination of increased In-In bonding and increased Zn-In electrostatic attraction. In addition, for certain charge states we find complex Jahn-Teller behaviour in which up to three different structures, (with the In triangle dimerised, antidimerised or symmetric) are stable and are close to degenerate. We are able to predict and successfully explain the structural behaviour of this complex using a simple tight binding model.Comment: 10 pages text (postscript) plus 8 figures (jpeg). Submitted to Phys. Rev.
    corecore