9,583 research outputs found

    On the reduction of the multidimensional Schroedinger equation to a first order equation and its relation to the pseudoanalytic function theory

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    Given a particular solution of a one-dimensional stationary Schroedinger equation (SE) this equation of second order can be reduced to a first order linear differential equation. This is done with the aid of an auxiliary Riccati equation. We show that a similar fact is true in a multidimensional situation also. We consider the case of two or three independent variables. One particular solution of (SE) allows us to reduce this second order equation to a linear first order quaternionic differential equation. As in one-dimensional case this is done with the aid of an auxiliary Riccati equation. The resulting first order quaternionic equation is equivalent to the static Maxwell system. In the case of two independent variables it is the Vekua equation from theory of generalized analytic functions. We show that even in this case it is necessary to consider not complex valued functions only, solutions of the Vekua equation but complete quaternionic functions. Then the first order quaternionic equation represents two separate Vekua equations, one of which gives us solutions of (SE) and the other can be considered as an auxiliary equation of a simpler structure. For the auxiliary equation we always have the corresponding Bers generating pair, the base of the Bers theory of pseudoanalytic functions, and what is very important, the Bers derivatives of solutions of the auxiliary equation give us solutions of the main Vekua equation and as a consequence of (SE). We obtain an analogue of the Cauchy integral theorem for solutions of (SE). For an ample class of potentials (which includes for instance all radial potentials), this new approach gives us a simple procedure allowing to obtain an infinite sequence of solutions of (SE) from one known particular solution

    On a factorization of second order elliptic operators and applications

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    We show that given a nonvanishing particular solution of the equation (divpgrad+q)u=0 (1) the corresponding differential operator can be factorized into a product of two first order operators. The factorization allows us to reduce the equation (1) to a first order equation which in a two-dimensional case is the Vekua equation of a special form. Under quite general conditions on the coefficients p and q we obtain an algorithm which allows us to construct in explicit form the positive formal powers (solutions of the Vekua equation generalizing the usual powers of the variable z). This result means that under quite general conditions one can construct an infinite system of exact solutions of (1) explicitly, and moreover, at least when p and q are real valued this system will be complete in ker(divpgrad+q) in the sense that any solution of (1) in a simply connected domain can be represented as an infinite series of obtained exact solutions which converges uniformly on any compact subset of . Finally we give a similar factorization of the operator (divpgrad+q) in a multidimensional case and obtain a natural generalization of the Vekua equation which is related to second order operators in a similar way as its two-dimensional prototype does

    Superconductivity in correlated disordered two-dimensional electron gas

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    We calculate the dynamic effective electron-electron interaction potential for a low density disordered two-dimensional electron gas. The disordered response function is used to calculate the effective potential where the scattering rate is taken from typical mobilities from recent experiments. We investigate the development of an effective attractive pair potential for both disordered and disorder free systems with correlations determined from existing numerical simulation data. The effect of disorder and correlations on the superconducting critical temperature Tc is discussed.Comment: 4 pages, RevTeX + epsf, 4 figure

    A New Liquid Phase and Metal-Insulator Transition in Si MOSFETs

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    We argue that there is a new liquid phase in the two-dimensional electron system in Si MOSFETs at low enough electron densities. The recently observed metal-insulator transition results as a crossover from the percolation transition of the liquid phase through the disorder landscape in the system below the liquid-gas critical temperature. The consequences of our theory are discussed for variety of physical properties relevant to the recent experiments.Comment: 12 pages of RevTeX with 3 postscript figure

    On a complex differential Riccati equation

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    We consider a nonlinear partial differential equation for complex-valued functions which is related to the two-dimensional stationary Schrodinger equation and enjoys many properties similar to those of the ordinary differential Riccati equation as, e.g., the famous Euler theorems, the Picard theorem and others. Besides these generalizations of the classical "one-dimensional" results we discuss new features of the considered equation like, e.g., an analogue of the Cauchy integral theorem

    On the Klein-Gordon equation and hyperbolic pseudoanalytic function theory

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    Elliptic pseudoanalytic function theory was considered independently by Bers and Vekua decades ago. In this paper we develop a hyperbolic analogue of pseudoanalytic function theory using the algebra of hyperbolic numbers. We consider the Klein-Gordon equation with a potential. With the aid of one particular solution we factorize the Klein-Gordon operator in terms of two Vekua-type operators. We show that real parts of the solutions of one of these Vekua-type operators are solutions of the considered Klein-Gordon equation. Using hyperbolic pseudoanalytic function theory, we then obtain explicit construction of infinite systems of solutions of the Klein-Gordon equation with potential. Finally, we give some examples of application of the proposed procedure

    Instability of the Two-Dimensional Metallic Phase to Parallel Magnetic Field

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    We report on magnetotransport studies of the unusual two-dimensional metallic phase in high mobility Si-MOS structures. We have observed that the magnetic field applied in the 2D plane suppresses the metallic state, causing the resistivity to increase dramatically by more than 30 times. Over the total existence range of the metallic state, we have found three distinct types of the magnetoresistance, related to the corresponding quantum corrections to the conductivity. Our data suggest that the unusual metallic state is a consequence of both spin- and Coulomb-interaction effects.Comment: 6 pages, Latex, 4 ps fig

    Comment on "Theory of metal-insulator transitions in gated semiconductors" (B. L. Altshuler and D. L. Maslov, Phys. Rev. Lett. 82, 145 (1999))

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    In a recent Letter, Altshuler and Maslov propose a model which attributes the anomalous temperature and field dependence of the resistivity of two-dimensional electron (or hole) systems to the charging and discharging of traps in the oxide (spacer), rather than to intrinsic behavior of interacting particles associated with a conductor-insulator transition in two dimensions. We argue against this model based on existing experimental evidence.Comment: 1 page; submitted to PR

    Magnetic Field Suppression of the Conducting Phase in Two Dimensions

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    The anomalous conducting phase that has been shown to exist in zero field in dilute two-dimensional electron systems in silicon MOSFETs is driven into a strongly insulating state by a magnetic field of about 20 kOe applied parallel to the plane. The data suggest that in the limit of T -> 0 the conducting phase is suppressed by an arbitrarily weak magnetic field. We call attention to striking similarities to magnetic field-induced superconductor-insulator transitions

    Test of scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs

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    We show that once the effects of valley splitting and intervalley scattering are incorporated, renormalization group theory consistently describes the metallic phase in silicon metal-oxide-semiconductor field-effect transistors down to the lowest accessible temperatures
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