Fine-tuning the functional properties of carbon nanotubes via the interconversion of encapsulated molecules

Tweaking the properties of carbon nanotubes is a prerequisite for their practical applications. Here we demonstrate fine-tuning the electronic properties of single-wall carbon nanotubes via filling with ferrocene molecules. The evolution of the bonding and charge transfer within the tube is demonstrated via chemical reaction of the ferrocene filler ending up as secondary inner tube. The charge transfer nature is interpreted well within density functional theory. This work gives the first direct observation of a fine-tuned continuous amphoteric doping of single-wall carbon nanotubes

Comparison of 35 and 50 {\mu}m thin HPK UFSD after neutron irradiation up to 6*10^15 neq/cm^2

We report results from the testing of 35 {\mu}m thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data reported before on 50 {\mu}m thick UFSD produced by HPK. The 35 {\mu}m thick sensors were irradiated with neutrons to fluences of 0, 1*10^14, 1*10^15, 3*10^15, 6*10^15 neq/cm^2. The sensors were tested pre-irradiation and post-irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source. The leakage current, capacitance, internal gain and the timing resolution were measured as a function of bias voltage at -20C and -27C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both. Within the fluence range measured, the advantage of the 35 {\mu}m thick UFSD in timing accuracy, bias voltage and power can be established.Comment: 9 pages, 9 figures, HSTD11 Okinawa. arXiv admin note: text overlap with arXiv:1707.0496

THE EFFECT OF ROTATIONAL GRAZING ON FLORISTIC COMPOSITION AND YIELD OF Ranunculo repentis – Alopecuretum pratensis HILLY GRASSLAND

V letih 2001 in 2002 smo ugotavljali vpliv uvedbe celoletne čredinske paše z različno popasenostjo ruše - do 4 (obravnavanje 1) in do 7 cm (obravnavanje 2) na pridelek in spremembe v rastlinski sestavi donedavnega hribovskega travnika združbe Ranunculo repentis – Alopecuretum pratensis. Eksperimentalni pašnik (0.53 ha) je bil razdeljen na šest čredink – dve obravnavanji v treh ponovitvah (naključni bloki). S pašo v posamezni čredinki je osem krav svetlolisaste pasme pričelo ob višini ruše približno 15 cm in rušo v dnevu do dveh popaslo do ciljne višine. Celoletna paša ruše do različne višine v dveh letih izvajanja poskusa ni značilno različno vplivala na skupni pridelek sušine. Število različnih rastlinskih vrst v ruši se je iz začetnih 57 do spomladi 2002 zmanjšalo pod 40, nakar je do spomladi 2003 spet naraslo in sicer na 44 (1) oziroma 45 (2). Shanonov indeks rastlinske pestrosti (H) je z uvedbo paše iz začetnih 3.16 v drugem letu upadel na 2.69 (1) oziroma na 2.72 (2). V naslednjem letu pa se je ponovno povečal na 2.87 (1) oziroma 2.91 (2).In the years 2001 and 2002 the effect of the introduction of the whole year rotational grazing with different post-grazing target sward heights (4 cm in the treatment 1, and 7 cm in the treatment 2) on the yield and changes in floristic composition of the Ranunculo repentis – Alopecuretum pratensis hilly grassland was studied. A meadow (0.53 ha) was divided into six paddocks (randomised block design - two treatments, three replications). Eight Simmental cows started grazing in paddocks at 15 cm sward height. After one or two days of grazing the target height of sward was achieved. During the two-year experiment, the whole year rotational grazing to various post-grazing target sward heights did not have a significantly different effect on the total dry matter (DM) yield. The number of different plant species in the sward, however, fell from the initial 57 to under 40 by the spring 2002, but by the spring 2003 the number rose again to 44 in the treatment 1, and to 45 in the treatment 2. Due to change in the utilisation, the Shannon diversity index (H) fell from the initial 3.16 to 2.69 in the second year (treatment 1) and to 2.72 (treatment 2). Next year it increased again to 2.87 (treatment 1) and to 2.91 (treatment 2)

Linear plasmon dispersion in single-wall carbon nanotubes and the collective excitation spectrum of graphene

We have measured a strictly linear pi-plasmon dispersion along the axis of individualized single wall carbon nanotubes, which is completely different from plasmon dispersions of graphite or bundled single wall carbon nanotubes. Comparative ab initio studies on graphene based systems allow us to reproduce the different dispersions. This suggests that individualized nanotubes provide viable experimental access to collective electronic excitations of graphene, and it validates the use of graphene to understand electronic excitations of carbon nanotubes. In particular, the calculations reveal that local field effects (LFE) cause a mixing of electronic transitions, including the 'Dirac cone', resulting in the observed linear dispersion

Gain and time resolution of 45 μ\mum thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of 101510^{15} neq_{eq}/cm2^2

Low Gain Avalanche Detectors (LGADs) are silicon sensors with a built-in charge multiplication layer providing a gain of typically 10 to 50. Due to the combination of high signal-to-noise ratio and short rise time, thin LGADs provide good time resolutions. LGADs with an active thickness of about 45 $\mu$m were produced at CNM Barcelona. Their gains and time resolutions were studied in beam tests for two different multiplication layer implantation doses, as well as before and after irradiation with neutrons up to $10^{15}$ n$_{eq}$/cm$^2$. The gain showed the expected decrease at a fixed voltage for a lower initial implantation dose, as well as for a higher fluence due to effective acceptor removal in the multiplication layer. Time resolutions below 30 ps were obtained at the highest applied voltages for both implantation doses before irradiation. Also after an intermediate fluence of $3\times10^{14}$ n$_{eq}$/cm$^2$, similar values were measured since a higher applicable reverse bias voltage could recover most of the pre-irradiation gain. At $10^{15}$ n$_{eq}$/cm$^2$, the time resolution at the maximum applicable voltage of 620 V during the beam test was measured to be 57 ps since the voltage stability was not good enough to compensate for the gain layer loss. The time resolutions were found to follow approximately a universal function of gain for all implantation doses and fluences.Comment: 17 page

Radiation Hardness of Thin Low Gain Avalanche Detectors

Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 um). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5e15 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (~300 um) and offer larger charge collection with respect to detectors without gain layer for fluences <2e15 cm-2. Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors

Exciton-plasmon states in nanoscale materials: breakdown of the Tamm-Dancoff approximation

Within the Tamm-Dancoff approximation ab initio approaches describe excitons as packets of electron-hole pairs propagating only forward in time. However, we show that in nanoscale materials excitons and plasmons hybridize, creating exciton--plasmon states where the electron-hole pairs oscillate back and forth in time. Then, as exemplified by the trans-azobenzene molecule and carbon nanotubes, the Tamm-Dancoff approximation yields errors as large as the accuracy claimed in ab initio calculations. Instead, we propose a general and efficient approach that avoids the Tamm--Dancoff approximation, and correctly describes excitons, plasmons and exciton-plasmon states

Charge collection properties of irradiated depleted CMOS pixel test structures

Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after irradiation with reactor neutrons up to 2$\cdot$10$^{15}$ n$_{\mathrm{eq}}$/cm$^2$. Two sets of devices were investigated: unthinned (700 $\mu$m) with substrate biased through the implant on top and thinned (200 $\mu$m) with processed and metallised back plane. Depleted depth was estimated with Edge-TCT and collected charge was measured with $^{90}$Sr source using an external amplifier with 25 ns shaping time. Depleted depth at given bias voltage decreased with increasing neutron fluence but it was still larger than 70 $\mu$m at 250 V after the highest fluence. After irradiation much higher collected charge was measured with thinned detectors with processed back plane although the same depleted depth was observed with Edge-TCT. Most probable value of collected charge of over 5000 electrons was measured also after irradiation to 2$\cdot$10$^{15}$ n$_{\mathrm{eq}}$/cm$^2$. This is sufficient to ensure successful operation of these detectors at the outer layer of the pixel detector in the ATLAS experiment at the upgraded HL-LHC

Gain Recovery in Heavily Irradiated Low Gain Avalanche Detectors by High Temperature Annealing

Studies of annealing at temperatures up to 450$^\circ$C with LGADs irradiated with neutrons are described. It was found that the performance of LGADs irradiated with 1.5e15 n/cm$^2$ was already improved at 5 minutes of annealing at 250$^\circ$C. Isochronal annealing for 30 minutes in 50$^\circ$C steps between 300$^\circ$C and 450$^\circ$C showed that the largest beneficial effect of annealing is at around 350$^\circ$C. Another set of devices was annealed for 60 minutes at 350$^\circ$C and this annealing significantly increased V$_{\mathrm{gl}}$. The effect is equivalent to reducing the effective acceptor removal constant by a factor of $\sim$ 4. Increase of V$_{\mathrm{gl}}$ is the consequence of increased effective space charge in the gain layer caused by formation of electrically active defects or re-activation of interstitial Boron atoms