3,308 research outputs found
Design study for the support of an inertial guidance test facility on gas lubricated compliant surface spherical bearings
Design study for support of inertial guidance test facility on gas lubricated compliant surface spherical bearing
Diameter selective characterization of single-wall carbon nanotubes
A novel method is presented which allows the characterization of diameter
selective phenomena in SWCNTs. It is based on the transformation of fullerene
peapod materials into double-wall carbon nanotubes and studying the diameter
distribution of the latter. The method is demonstrated for the diameter
selective healing of nanotube defects and yield from C peapod samples.
Openings on small diameter nanotubes are closed first. The yield of very small
diameter inner nanotubes from C peapods is demonstrated. This challenges
the theoretical models of inner nanotube formation. An anomalous absence of
mid-diameter inner tubes is observed and explained by the suppressed amount of
C peapods due to the competition of the two almost equally stable
standing and lying C peapod configurations
Interaction between concentric Tubes in DWCNTs
A detailed investigation of the Raman response of the inner tube radial
breathing modes (RBMs) in double-wall carbon nanotubes is reported. It revealed
that the number of observed RBMs is two to three times larger than the number
of possible tubes in the studied frequency range. This unexpected increase in
Raman lines is attributed to a splitting of the inner tube response. It is
shown to originate from the possibility that one type of inner tube may form in
different types of outer tubes and the fact that the inner tube RBM frequency
depends on the diameter of the enclosing tube. Finally, a comparison of the
inner tube RBMs and the RBMs of tubes in bundles gave clear evidence that the
interaction in a bundle is stronger than the interaction between inner and
outer tubes.Comment: 6 pages, 7 figures, submitted to Eur. Phys. J.
Linear plasmon dispersion in single-wall carbon nanotubes and the collective excitation spectrum of graphene
We have measured a strictly linear pi-plasmon dispersion along the axis of
individualized single wall carbon nanotubes, which is completely different from
plasmon dispersions of graphite or bundled single wall carbon nanotubes.
Comparative ab initio studies on graphene based systems allow us to reproduce
the different dispersions. This suggests that individualized nanotubes provide
viable experimental access to collective electronic excitations of graphene,
and it validates the use of graphene to understand electronic excitations of
carbon nanotubes. In particular, the calculations reveal that local field
effects (LFE) cause a mixing of electronic transitions, including the 'Dirac
cone', resulting in the observed linear dispersion
Radiation Hardness of Thin Low Gain Avalanche Detectors
Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure
where an appropriate doping of the multiplication layer (p+) leads to high
enough electric fields for impact ionization. Gain factors of few tens in
charge significantly improve the resolution of timing measurements,
particularly for thin detectors, where the timing performance was shown to be
limited by Landau fluctuations. The main obstacle for their operation is the
decrease of gain with irradiation, attributed to effective acceptor removal in
the gain layer. Sets of thin sensors were produced by two different producers
on different substrates, with different gain layer doping profiles and
thicknesses (45, 50 and 80 um). Their performance in terms of gain/collected
charge and leakage current was compared before and after irradiation with
neutrons and pions up to the equivalent fluences of 5e15 cm-2. Transient
Current Technique and charge collection measurements with LHC speed electronics
were employed to characterize the detectors. The thin LGAD sensors were shown
to perform much better than sensors of standard thickness (~300 um) and offer
larger charge collection with respect to detectors without gain layer for
fluences <2e15 cm-2. Larger initial gain prolongs the beneficial performance of
LGADs. Pions were found to be more damaging than neutrons at the same
equivalent fluence, while no significant difference was found between different
producers. At very high fluences and bias voltages the gain appears due to deep
acceptors in the bulk, hence also in thin standard detectors
Comparison of 35 and 50 {\mu}m thin HPK UFSD after neutron irradiation up to 6*10^15 neq/cm^2
We report results from the testing of 35 {\mu}m thick Ultra-Fast Silicon
Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison
of these new results to data reported before on 50 {\mu}m thick UFSD produced
by HPK. The 35 {\mu}m thick sensors were irradiated with neutrons to fluences
of 0, 1*10^14, 1*10^15, 3*10^15, 6*10^15 neq/cm^2. The sensors were tested
pre-irradiation and post-irradiation with minimum ionizing particles (MIPs)
from a 90Sr \b{eta}-source. The leakage current, capacitance, internal gain and
the timing resolution were measured as a function of bias voltage at -20C and
-27C. The timing resolution was extracted from the time difference with a
second calibrated UFSD in coincidence, using the constant fraction method for
both. Within the fluence range measured, the advantage of the 35 {\mu}m thick
UFSD in timing accuracy, bias voltage and power can be established.Comment: 9 pages, 9 figures, HSTD11 Okinawa. arXiv admin note: text overlap
with arXiv:1707.0496
Gain and time resolution of 45 m thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of n/cm
Low Gain Avalanche Detectors (LGADs) are silicon sensors with a built-in
charge multiplication layer providing a gain of typically 10 to 50. Due to the
combination of high signal-to-noise ratio and short rise time, thin LGADs
provide good time resolutions.
LGADs with an active thickness of about 45 m were produced at CNM
Barcelona. Their gains and time resolutions were studied in beam tests for two
different multiplication layer implantation doses, as well as before and after
irradiation with neutrons up to n/cm.
The gain showed the expected decrease at a fixed voltage for a lower initial
implantation dose, as well as for a higher fluence due to effective acceptor
removal in the multiplication layer. Time resolutions below 30 ps were obtained
at the highest applied voltages for both implantation doses before irradiation.
Also after an intermediate fluence of n/cm, similar
values were measured since a higher applicable reverse bias voltage could
recover most of the pre-irradiation gain. At n/cm, the
time resolution at the maximum applicable voltage of 620 V during the beam test
was measured to be 57 ps since the voltage stability was not good enough to
compensate for the gain layer loss. The time resolutions were found to follow
approximately a universal function of gain for all implantation doses and
fluences.Comment: 17 page
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