Multilayered Heater Nanocryotron: A Superconducting-Nanowire-Based Thermal Switch

We demonstrate a multilayer nanoscale cryogenic heater-based switch (M-hTron) that uses a normal-metal heater overlapping a thin-film superconductor separated by a thin insulating layer. The M-hTron eliminates leakage current found in three-terminal superconducting switches and applies heat locally to the superconductor, reducing the energy required to switch the device. Modeling using the energy-balance equations and the acoustic mismatch model demonstrates reasonable agreement with experiment. The M-hTron is a promising device for digital superconducting electronics that require high fan-out and offers the possibility of enhancing readout for superconducting-nanowire single-photon detectors

Demonstration of sub-3 ps temporal resolution with a superconducting nanowire single-photon detector

Improvements in temporal resolution of single photon detectors enable increased data rates and transmission distances for both classical and quantum optical communication systems, higher spatial resolution in laser ranging, and observation of shorter-lived fluorophores in biomedical imaging. In recent years, superconducting nanowire single-photon detectors (SNSPDs) have emerged as the most efficient, time-resolving single-photon counting detectors available in the near infrared, but understanding of the fundamental limits of timing resolution in these devices has been limited due to a lack investigations into the time scales involved in the detection process. We introduce an experimental technique to probe the detection latency in SNSPDs and show that the key to achieving low timing jitter is the use of materials with low latency. By using a specialised niobium nitride (NbN) SNSPD we demonstrate that the system temporal resolution can be as good as 2.6±0.2 ps for visible wavelengths and 4.3±0.2 ps at 1550 nm

A superconducting thermal switch with ultrahigh impedance for interfacing superconductors to semiconductors

A number of current approaches to quantum and neuromorphic computing use superconductors as the basis of their platform or as a measurement component, and will need to operate at cryogenic temperatures. Semiconductor systems are typically proposed as a top-level control in these architectures, with low-temperature passive components and intermediary superconducting electronics acting as the direct interface to the lowest-temperature stages. The architectures, therefore, require a low-power superconductor-semiconductor interface, which is not currently available. Here we report a superconducting switch that is capable of translating low-voltage superconducting inputs directly into semiconductor-compatible (above 1,000 mV) outputs at kelvin-scale temperatures (1 K or 4 K). To illustrate the capabilities in interfacing superconductors and semiconductors, we use it to drive a light-emitting diode (LED) in a photonic integrated circuit, generating photons at 1 K from a low-voltage input and detecting them with an on-chip superconducting single-photon detector. We also characterize our device's timing response (less than 300 ps turn-on, 15 ns turn-off), output impedance (greater than 1 M{\Omega}), and energy requirements (0.18 fJ/um^2, 3.24 mV/nW)

Athermal Energy Loss from X-Rays Deposited in Thin Superconducting Bilayers on Solid Substrates

An important feature that determines the energy resolution of any type of thin film microcalorimeter is the fraction of athermal energy that can be lost to the heat bath prior to the device coming into thermal equilibrium

Demonstration of sub-3 ps temporal resolution with a superconducting nanowire single-photon detector

Improvements in temporal resolution of single-photon detectors enable increased data rates and transmission distances for both classical and quantum optical communication systems, higher spatial resolution in laser ranging, and observation of shorter-lived fluorophores in biomedical imaging. In recent years, superconducting nanowire single-photon detectors (SNSPDs) have emerged as the most efficient time-resolving single-photon-counting detectors available in the near-infrared, but understanding of the fundamental limits of timing resolution in these devices has been limited due to a lack of investigations into the timescales involved in the detection process. We introduce an experimental technique to probe the detection latency in SNSPDs and show that the key to achieving low timing jitter is the use of materials with low latency. By using a specialized niobium nitride SNSPD we demonstrate that the system temporal resolution can be as good as 2.6 ± 0.2 ps for visible wavelengths and 4.3 ± 0.2 ps at 1,550 nm

Demonstration of sub-3 ps temporal resolution with a superconducting nanowire single-photon detector

Improvements in temporal resolution of single-photon detectors enable increased data rates and transmission distances for both classical and quantum optical communication systems, higher spatial resolution in laser ranging, and observation of shorter-lived fluorophores in biomedical imaging. In recent years, superconducting nanowire single-photon detectors (SNSPDs) have emerged as the most efficient time-resolving single-photon-counting detectors available in the near-infrared, but understanding of the fundamental limits of timing resolution in these devices has been limited due to a lack of investigations into the timescales involved in the detection process. We introduce an experimental technique to probe the detection latency in SNSPDs and show that the key to achieving low timing jitter is the use of materials with low latency. By using a specialized niobium nitride SNSPD we demonstrate that the system temporal resolution can be as good as 2.6 ± 0.2 ps for visible wavelengths and 4.3 ± 0.2 ps at 1,550 nm

The role of photons in establishing a non-equilibrium quasiparticle state in small gap mulitple tunnelling superconducting tunnel junctions.

We derive expressions for phonon escape times from a thin superconducting film. The escape time is determined by the rate of scattering conversion for phonons propagating beyond the critical cone for total internal reflection. The conversion is due to different scattering processes for the groups of Cooper pair breaking and sub-gap phonons. For pair breaking phonons the most efficient conversion mechanism is through the interaction with the condensate. For sub-gap phonons the conversion rate is much slower and for plane parallel films is due to elastic scattering at surface or interface roughness resulting in significantly slower escape times. We discuss implications of slow escape time for sub-gap phonons for the properties of the recently observed new non-equilibrium state in small gap multiple tunnelling superconducting tunnel junctions

Athermal energy loss from x-rays deposited in thin superconducting films on solid substrates

When energy is deposited in a thin-film cryogenic detector, such as from the absorption of an x-ray, an important feature that determines the energy resolution is the amount of athermal energy that can be lost to the heat bath prior to the elementary excitation systems coming into thermal equilibrium. This form of energy loss will be position dependent and therefore can limit the detector energy resolution. An understanding of the physical processes that occur when elementary excitations are generated in metal films on dielectric substrates is important for the design and optimization of a number of different types of low-temperature detectors. We have measured the total energy loss in one relatively simple geometry that allows us to study these processes and compare measurements with calculation based upon a model for the various different processes. We have modeled the athermal phonon energy loss in this device by finding an evolving phonon distribution function that solves the system of kinetic equations for the interacting system of electrons and phonons. Using measurements of device parameters such as the Debye energy and the thermal diffusivity we have calculated the expected energy loss from this detector geometry, and also the position-dependent variation of this loss. We have also calculated the predicted impact on measured spectral lineshapes and have shown that they agree well with measurements. In addition, we have tested this model by using it to predict the performance of a number of other types of detector with different geometries, where good agreement is also found. DOI: 10.1103/PhysRevB.87.10450

The effect of carrier diffusion on the characteristics of semiconductor imaging arrays.

The fabrication of semiconductor imaging arrays with optimum spectroscopic capabilities requires the parallel development of modelling techniques to investigate the effects of carrier transport on detector performance. We have developed an analytical approach based on the method of weighting potentials. It is found that diffusion may cause substantial deterioration of array characteristics by distorting carrier motion in the crucial near-field region. As a result, not only are the imaging characteristics of the array impaired, but, also, its spectroscopic performance may be greatly degraded