15 research outputs found
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Picosecond Avalanche Detector â working principle and gain measurement with a proof-of-concept prototype
The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a (NP)drift(NP)gain structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. The signal is then induced by the secondary charges moving inside a thicker drift region. A proof-of-concept monolithic prototype, consisting of a matrix of hexagonal pixels with 100 ÎŒm pitch, has been produced using the 130 nm SiGe BiCMOS process by IHP microelectronics. Measurements on probe station and with a 55Fe X-ray source show that the prototype is functional and displays avalanche gain up to a maximum electron gain of 23. A study of the avalanche characteristics, corroborated by TCAD simulations, indicates that space-charge effects due to the large primary charge produced by the conversion of X-rays from the ^55Fe source limits the effective gain
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Testbeam results of the Picosecond Avalanche Detector proof-of-concept prototype
The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 ÎŒm pitch. At a sensor bias voltage of 125 V, the detector provides full efficiency and average time resolution of 30, 25 and 17 ps in the overall pixel area for a power consumption of 0.4, 0.9 and 2.7 W/cm2, respectively. In this first prototype the time resolution depends significantly on the distance from the center of the pixel, varying at the highest power consumption measured between 13 ps at the center of the pixel and 25 ps in the inter-pixel region
Testbeam Results of the Picosecond Avalanche Detector Proof-Of-Concept Prototype
The proof-of-concept prototype of the Picosecond Avalanche Detector, a
multi-PN junction monolithic silicon detector with continuous gain layer deep
in the sensor depleted region, was tested with a beam of 180 GeV pions at the
CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend
electronics and hexagonal pixels with 100 {\mu}m pitch. At a sensor bias
voltage of 125 V, the detector provides full efficiency and average time
resolution of 30, 25 and 17 ps in the overall pixel area for a power
consumption of 0.4, 0.9 and 2.7 W/cm^2, respectively. In this first prototype
the time resolution depends significantly on the distance from the center of
the pixel, varying at the highest power consumption measured between 13 ps at
the center of the pixel and 25 ps in the inter-pixel region
20 ps Time Resolution with a Fully-Efficient Monolithic Silicon Pixel Detector without Internal Gain Layer
A second monolithic silicon pixel prototype was produced for the MONOLITH
project. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch,
readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with
50 {\mu}m thick epilayer of 350 {\Omega}cm resistivity were used to produce a
fully depleted sensor. Laboratory and testbeam measurements of the analog
channels present in the pixel matrix show that the sensor has a 130 V wide
bias-voltage operation plateau at which the efficiency is 99.8%. Although this
prototype does not include an internal gain layer, the design optimised for
timing of the sensor and the front-end electronics provides a time resolutions
of 20 ps.Comment: 11 pages, 11 figure
Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer
A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced
project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV
n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m
pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Wafers
with 50 {\mu}m thick epilayer with a resistivity of 350 {\Omega}cm were used to
produce a fully depleted sensor. Laboratory tests conducted with a 90Sr source
show that the detector works satisfactorily after irradiation. The
signal-to-noise ratio is not seen to change up to fluence of 6 x 10^14 n_eq
/cm^2 . The signal time jitter was estimated as the ratio between the voltage
noise and the signal slope at threshold. At -35 {^\circ}C, sensor bias voltage
of 200 V and frontend power consumption of 0.9 W/cm^2, the time jitter of the
most-probable signal amplitude was estimated to be 21 ps for proton fluence up
to 6 x 10 n_eq/cm^2 and 57 ps at 1 x 10^16 n_eq/cm^2 . Increasing the sensor
bias to 250 V and the analog voltage of the preamplifier from 1.8 to 2.0 V
provides a time jitter of 40 ps at 1 x 10^16 n_eq/cm^2.Comment: Submitted to JINS
Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 Όm. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of (99.9 )% was measured together with a time resolution of (36.4 ± 0.8) ps at the highest preamplifier bias current working point of 150 ΌA and at a sensor bias voltage of 160 V. The ASIC was also characterized at lower bias voltage and preamplifier current.A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 m. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of % was measured together with a time resolution of ps at the highest preamplifier bias current working point of 150 A and at a sensor bias voltage of 160 V. The ASIC was also characterized at lower bias voltage and preamplifier current
Gain measurements of the first proof-of-concept PicoAD prototype with a 55Fe X-ray radioactive source
The Picosecond Avalanche Detector is a multi-junction silicon pixel detector devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamping capability. A proof-of-concept prototype of the PicoAD sensor has been produced by IHP microelectronics. Measurements with a 55Fe X-ray radioactive source show that the prototype is functional with an avalanche gain up to a maximum electron gain of 23
Radiation tolerance of SiGe BiCMOS monolithic silicon pixel detectors without internal gain layer
A monolithic silicon pixel prototype produced for theMONOLITH ERC Advanced project was irradiated with 70 MeV protons upto a fluence of 1 Ă 101 MeV n/cm. The ASIC contains a matrix ofhexagonal pixels with 100 ÎŒm pitch, readout by low-noise andvery fast SiGe HBT frontend electronics. Wafers with 50 ÎŒmthick epilayer with a resistivity of 350 Ωcm were used toproduce a fully depleted sensor. Laboratory tests conducted with aSr source show that the detector works satisfactorily afterirradiation. The signal-to-noise ratio is not seen to change up tofluence of 6 Ă 10n/cm. The signaltime jitter was estimated as the ratio between the voltage noise andthe signal slope at threshold. At -35°C, sensor bias voltageof 200 V and frontend power consumption of 0.9 W/cm, the timejitter of the most-probable signal amplitude was estimated to be ÏSr = 21 ps for proton fluence up to6 Ă 10n/cm and 57 ps at1 Ă 10n/cm. Increasing the sensorbias to 250 V and the analog voltage of the preamplifier from 1.8to 2.0 V provides a time jitter of 40 ps at1 Ă 10n/cm.A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 ÎŒm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 ÎŒm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully depleted sensor. Laboratory tests conducted with a 90Sr source show that the detector works satisfactorily after irradiation. The signal-to-noise ratio is not seen to change up to fluence of 6 x 10^14 n_eq /cm^2 . The signal time jitter was estimated as the ratio between the voltage noise and the signal slope at threshold. At -35 {^â}C, sensor bias voltage of 200 V and frontend power consumption of 0.9 W/cm^2, the time jitter of the most-probable signal amplitude was estimated to be 21 ps for proton fluence up to 6 x 10 n_eq/cm^2 and 57 ps at 1 x 10^16 n_eq/cm^2 . Increasing the sensor bias to 250 V and the analog voltage of the preamplifier from 1.8 to 2.0 V provides a time jitter of 40 ps at 1 x 10^16 n_eq/cm^2
The CompactLight Design Study
CompactLight is a Design Study funded by the European Union under the Horizon 2020 research and innovation funding programme, with Grant Agreement No. 777431. CompactLight was conducted by an International Collaboration of 23 international laboratories and academic institutions, three private companies, and five third parties. The project, which started in January 2018 with a duration of 48 months, aimed to design an innovative, compact, and cost-effective hard X-ray FEL facility complemented by a soft X-ray source to pave the road for future compact accelerator-based facilities. The result is an accelerator that can be operated at up to 1 kHz pulse repetition rate, beyond todayâs state of the art, using the latest concepts for high brightness electron photoinjectors, very high gradient accelerating structures in X-band, and novel short-period undulators. In this report, we summarize the main deliverable of the project: the CompactLight Conceptual Design Report, which overviews the current status of the design and addresses the main technological challenges