Adaptive cross-correlation detector for signals of optoelectronic reflective sensors

A soft- and hardware realization of optoelectronic intellectual sensor for biomedical noninvasive studies based on the analysis of light reflected from living tissues has been described. The main feature of the developed model is use of an adaptive crosscorrelation detector controlled by the digital signal processor. Algorithms and operating mode of detector are defined by the type of particular problem to be solved and conditions of measurements. The proposed model was tested to identify dynamic signals in the following areas: pulsometer, evaluation variability of the cardial rhythm, evaluation of blood saturation by oxygen

The construction of the training process highly skilled athletes in soccer and field hockey in the annual cycle of training

The purpose of the study - to justify the theoretical and methodological principles and concepts of the training process of building highly skilled athletes in soccer and field hockey in the annual cycle of training. The results . Calculate the ratio of training loads of different orientation in the annual cycle of training. Means of producing football players in the annual training cycle is as follows: non-specific (general training exercise) - 45.6%, specific - 54.4% (special training exercise - 4.1% subsidiary - 22, 7%, competitive - 27.6% ). Means of producing players in the annual training cycle is as follows: non-specific (general training) exercise - 49.0%, specific - 51.0% (special training - 2.3% subsidiary - 26.1%, competitive exercise - 22.0% )

Theoretical consideration of pits recording and etching processes in chalcogenide vitreous semiconductors

We propose theoretical consideration and computer modeling of information pit recording and etching processes in chalcogenide vitreous semiconductors. We demonstrate how to record and develop information pits with the necessary shape and sizes in chalcogenide photoresists using gaussian laser beam and selective etching. It has been shown that phototransformed region cross-section could be almost trapezoidal or parabolic depending on the photoresist material optical absorption, recording beam power, exposure, etchant selectivity and etching time. After illumination, the spatial distribution of photo-transformed material fraction was calculated using the Kolmogorov-Awrami equation. Analyzing obtained results, we derived a rather simple approximate analytical expression for the dependence of the photo-transformed region width and depth on the recording gaussian beam power, radius and exposure time. Then the selective etching process was simulated numerically. The obtained results quantitatively describes the characteristics of pits recorded by the gaussian laser beam in thin layers of As40S60 chalcogenide semiconductor.Comment: 14 pages, 1 scheme, 9 figure

Multi-element gas sensor based on surface plasmon resonance: recognition of alcohols by using calixarene films

This work is devoted to development of a multi-element gas sensor based on surface plasmon resonance (SPR) to recognize some alcohols. As sensitive layers capable to change their optical properties when interacting with volatile alcohol molecules, we investigated bulk-porous sorbents – calixarenes (tret-butyl-calix[4,6,8]arenes (С[4]А, С[6]А, С[8]А), tetra-amyl-calix[4] resorchinolaren (C[4]Re). Each calixarene was studied to obtain its kinetic concentration SPR characteristics for interaction with ethanol, isopropanol and penthanol vapors. To realize SPR measurements, the sensitive calixarene films (d ∼ 100 nm) were deposited on a gold film (d ∼ 45 nm) by using the method of thermal evaporation in vacuum. Experimental multi-element SPR device was designed as based on the analysis of TV image obtained for the studied array of calixarene films and tested using saturated ethanol vapors

Finding of the optimal parameters of animated and stereographic rainbow diffractive images

We have considered the basic aspects of the technology of animated and stereographic rainbow images. These images can be included in Optical Security Devices (OSDs) in order to increase their structure complexity and to improve their protective properties. The cited technology provides, on the one hand, a simple identification on the visual level of verification and, on the other hand, the sufficient reliability against counterfeits. The last property is achieved at first by the division of the elemental unit on elemental regions of any adjusted shape with outline of the precision that is inaccessible for the recreation without Electron Beam Lithography Equipment (EBLE) which is used for the recording of OSDs. Second, the used encoding methods also assure the certain reliability. In the context of the paper, the theoretical discussion based a quantitative formulation of the Huygens--Fresnel law of the diffraction on an elemental diffractive grating is carried out. For other definite Conditions of Lighting and Observation of Diffracting Light (CLODL), the correlation between the slope angle of diffraction grating strokes and the corresponding horizontal parallax angle is got; and the parameter which defines the channel selection (the quality of splitting into separate channels) is introduced. The rule for the definition of the wavelength and the intensity of light that diffracts on a given grating under certain CLODL is derived as well. This fact allows one to create the software utility that models the behavior of anigrams or stereograms. An algorithm of the synthesis of anigrams and stereograms as parts of OSDs using the technology of a composite “figure” elemental unit (that is composed from parts of any shape) and applying the halftone encoding by the period, filling, and achromaticity or all these parameters at once is elaborated, and its software implementation is constructed. The criteria for the choice of such anigram’s parameters as the resolution, number of channels, and angle distances between them are elaborated. In order to check them, the results of tests are summarized. The investigation of the optimal parameters of halftone images’ encoding finding is implemented, and the results obtained for the tough and flexible linkings of a channel to the subregion of an elemental unit for hatching images are compared

Is there any future of optical discs?

Considered in this paper are causes for cutting compact discs out of information technology market. It has been shown a search of new technological solutions for efficient use of CDs in archive data storage

Визначення рівня ендогенного еритропоетину сироватки для диференційної діагностики справжньої поліцитемії та симптоматичних еритроцитозів

The article deals with determining possibility of the assessmentof the level of endogenous serum erythropoietin (EPO) for differential diagnosis of polycythemia vera (PV) andsecondary erythrocytosis (SE). The determination of subnormal level of this cytokine for the diagnosis of PV has beendetected. The relation between the level of endogenous erythropoietin and iron metabolism also has been analyzed. Thestudy involved 88 patients with PV and 119 patients with SE. Statistically significant decrease in EPO concentrationlevel has been detected in PV patients. The mean EPO level was equal to 6.38 ± 0.84 mIU/mL and 17.98 ±2.48 mIU/mLin PV and SE patients respectively. In control group of individuals EPO concentration was equal to 9,81 ±0,58mIU/mL, the significant difference was found between all studied groups (р<0.01). According to our data, EPO wasincreased in 28 SE patients (23.53%), it was not observed in control group and in group of PV patients(φ*emp = 4.355, р<0.01). The decrease of EPO level in PV patients has been detected more often than in SE patients(84.09% versus 11.76% , φ*emp = 5.218, р<0.01), it has not been observed in control group. Only 14 (15.91%) PV patients had normal EPO level, in contrast 77 (64.71%) SE patients demonstrated normal EPO level (φ*emp = 4.578,р<0.01). The average level of ferritin was equal to 57.41 ± 9.74 ng/mL in PV patients and 199.77 ± 14.32 ng/mL in SEpatients (р<0.01). Significantly more patients with PV demonstrated decrease of ferritin level (31.81% versus 7.56%,φ*emp = 4.438, р<0.01). Patients with SE more often had raised level of EPO than PV patients (15.12% versus 4.54%,φ*emp = 2.453, р<0.01). The sensitivity of test with detecting of the reduced level of EPO for the diagnosis of PV was84.1%, specificity - 87.4%, positive predictive value - 83.1%, negative predictive value - 88.1%. Normal range of EPOsignificantly (rs = 0,5494) correlated with decreased levels of serum ferritin in patients with polycythemia vera, whichwas caused by iron deficiency in a certain number of patients with PV.Впредставленной работе оценена возможность использования теста по определению уровня эндогенногоэритропоэтина сыворотки (ЭПО) для дифференциальной диагностики истинной полицитемии (ИП) и вто-ричных симптоматических эритроцитозов (СЭ), определена чувствительность и специфичность определениясубнормального уровня данного цитокина в качестве маркера истинной полицитемии ИП. Такжепроанализирована связь уровня эндогенного эритропоэтина ЭПО и показателей обмена железа. Обследовано88 больных с истинной полицитемией ИП и 119 пациентов с симптоматическими эритроцитозами СЭ. Вы-явлено достоверное снижение концентрации ЭПО в группе больных с ИП, средний уровень которогосоставлял: 6,38 ± 0,84 мМо/мл, против 17,98 ± 2,48 мМО/мл у пациентов с СЭ (р<0,01) и 9,81 ± 0,58 мМО/мл улиц контрольной группы (р<0,01). Повышение уровня ЭПО выше нормы зафиксировано у 28 (23,53%) па-циентов с СЭ (23,53%), в группе больных с ИП и среди лиц контрольной группы – не наблюдалось(φ*эмп = 4,355, р<0,01). Снижение уровня ЭПО достоверно чаще наблюдалось при ИП (у 84,09% больных)нежели при СЭ (11,76% пациентов) при СЭ (φ*эмп = 5,218, р<0,01). В контрольной группе уменьшениеконцентрации ЭПО ниже референтных значений не наблюдалось зафиксировано. Нормальный уровень ЭПОвыявлен только у 14 (15,91%) пациентов с ИП (15,91%) против 77 (64,71%) с СЭ (φ*эмп = 4,578, р<0,01). Убольных с ИП средний уровень ферритина соответствовал 57,41 ± 9,74 нг/мл, в группе пациентов при ИПпротив СЕ – 199,77 ± 14,32 нг/мл при СЭ (р<0,01). У больных с ИП достоверно чаще у большего числа больныхс ИП, чем у пациентов с СЕ, отмечено снижение уровня ферритина сыворотки (31,81% против 7,56%,φ*эмп = 4,438, р<0,01). Повышение уровня ферритина чаще наблюдалось у пациентов с СЭ (15,12%) нежели убольных с ИП (4,54%) (при ИП φ*эмп =2,453, р<0,01). Чувствительность теста с определением сниженногоуровня ЭПО для диагностики ИП составила 84,1%, специфичность – 87,4%, прогностическая ценностьположительного результата – 83,1%, прогностическая ценность отрицательного результата – 88,1%. Убольных с ИП нормальный уровень ЭПО статистически значимо (rs = 0,5494) коррелировал со сниженнымуровнем ферритина сыворотки, что обусловлено дефицитом железа у определенного количества пациентов сполицитемией.The article deals with determining possibility of the assessmentof the level of endogenous serum erythropoietin (EPO) for differential diagnosis of polycythemia vera (PV) andsecondary erythrocytosis (SE). The determination of subnormal level of this cytokine for the diagnosis of PV has beendetected. The relation between the level of endogenous erythropoietin and iron metabolism also has been analyzed. Thestudy involved 88 patients with PV and 119 patients with SE. Statistically significant decrease in EPO concentrationlevel has been detected in PV patients. The mean EPO level was equal to 6.38 ± 0.84 mIU/mL and 17.98 ±2.48 mIU/mLin PV and SE patients respectively. In control group of individuals EPO concentration was equal to 9,81 ±0,58mIU/mL, the significant difference was found between all studied groups (р<0.01). According to our data, EPO wasincreased in 28 SE patients (23.53%), it was not observed in control group and in group of PV patients(φ*emp = 4.355, р<0.01). The decrease of EPO level in PV patients has been detected more often than in SE patients(84.09% versus 11.76% , φ*emp = 5.218, р<0.01), it has not been observed in control group. Only 14 (15.91%) PV patients had normal EPO level, in contrast 77 (64.71%) SE patients demonstrated normal EPO level (φ*emp = 4.578,р<0.01). The average level of ferritin was equal to 57.41 ± 9.74 ng/mL in PV patients and 199.77 ± 14.32 ng/mL in SEpatients (р<0.01). Significantly more patients with PV demonstrated decrease of ferritin level (31.81% versus 7.56%,φ*emp = 4.438, р<0.01). Patients with SE more often had raised level of EPO than PV patients (15.12% versus 4.54%,φ*emp = 2.453, р<0.01). The sensitivity of test with detecting of the reduced level of EPO for the diagnosis of PV was84.1%, specificity - 87.4%, positive predictive value - 83.1%, negative predictive value - 88.1%. Normal range of EPOsignificantly (rs = 0,5494) correlated with decreased levels of serum ferritin in patients with polycythemia vera, whichwas caused by iron deficiency in a certain number of patients with PV

High-speed optical recording in vitreous chalcogenide thin films

Thin films of glassy chalcogenide semiconductor are widely used as recording media in optical data storage. To obtain relief micro- and nanoscale structures on the surface of optical master discs inorganic photoresists based on chalcogenide glassy semiconductors can be used. They have high resolution and allow for exposure by short laser pulses. Implementation of such exposure is promoted by increasing the speed of photostructural transformations at high powers of exposing radiation. This increase in the sensitivity is associated with both local heating by illumination and a high density of excited electron-hole pairs. The exposure mode of the inorganic photoresists based on glassy chalcogenide semiconductor pulses of 10⁻⁸-10⁻⁹ s is close to the threshold of local photothermal destruction. Significant impact on the value of the threshold of photothermal destruction effects the choice of the substrate material which determines the rate of heat removal from the irradiation area. Moreover, one also needs to consider the effect of pulsed annealing of the inorganic photoresist material on the process of selective etching. We have established an inversion of the selective etching of the inorganic negative photoresist based on As₂S₃ in the center of the irradiated zone. The diameter of this zone is about 20% of the diameter of exposing beam. After the selective etching in alkaline solution in the center of protrusions being formed on the substrate, there observed are some dimples with the depth of 30-50 nm. Prior to the processing of irradiated inorganic photoresist by the selective etching these dimples were absent and their appearance is not due to possible local material evaporation of the inorganic photoresist. A possible reason for the inversion of solubility of the inorganic photoresist could be pulsed annealing in the recording process

Modeling of information recording and selective etching processes in inorganic resists

Theoretical consideration and computer modeling of information pit recording and etching processes in chalcogenide vitreous semiconductors are proposed, namely we demonstrate how to record and develop information pits with the necessary shape and sizes in the inorganic resist using focused Gaussian laser beam and selective etching. It has been shown that phototransformed region cross-section could be almost trapezoidal or parabolic depending on the resist material optical absorption, recording beam power, exposure, etchant selectivity and etching time. Namely, during the laser illumination and thermal heating caused by it, photosensitive material is the quasi-equilibrium microscopic mixture of the transformed and nontransformed phases with different optical absorption coefficients: temperature dependent near the absorption edge «transformed» coefficient бe and almost independent coefficient α0 . If αe ≤ α0 e after thermal heating, the photo-transformed region «bleaches» and the pit depth increases more rapidly under the following laser power increasing. If αe > α0 , the phototransformed region «darkens» and the pit depth increases sub-linearly or even saturates under the following laser power increasing. Thus, almost parabolic or flattened pits appear when αe ≥ α0, whereas the pits with elongated tops appear when αe << α0. After illumination, the spatial distribution of photo-transformed material fraction was calculated using the Kolmogorov-Awrami equation. Analyzing obtained results, we derived a rather simple approximate analytical expression for the dependence of the phototransformed region width and depth on the recording Gaussian beam power, radius and exposure time. Then the selective etching process was simulated numerically. The obtained results quantitatively describe the characteristics of pits recorded by the Gaussian laser beam in thin layers of As₄₀S₆₀ chalcogenide semiconductor. Our model open possibilities how to select the necessary recording procedure and etching conditions in order to obtain pits with the optimum shape and sizes.Запропоновано теоретичний розгляд та комп’ютерне моделювання процесів запису інформації та селективного травлення в халькогенідних напівпровідниках. Змодульовано процес одержання інформаційних питів необхідної форми та розміру у неорганічному резисті, використовуючи сфокусований гаусівський лазерний пучок та селективне травлення. Показано, що переріз фототрансформованої області змінюється від майже трапецієвидного до параболічного в залежності від коефіцієнта оптичного поглинання, потужності лазерного пучка, експозиції, селективності травника та часу травлення. Просторовий розподіл долі фототрансформованого матеріалу розраховано з рівняння Колмогорова-Аврами. Проаналізовано одержані результати й виведено досить простий наближений аналітичний вираз для залежності ширини та висоти фототрансформованої області від потужності лазерного пучка, його радіусу, часу експонування та селективності травника. Одержані результати добре описують характеристики пітів, записаних у тонких шарах халькогеніду As₄₀S₆₀. Модель відкриває реальну можливість добору умов запису та травлення резисту, необхідних для одержання пітів з оптимальними розмірами.Предложено теоретическое рассмотрение и компьютерное моделирование процессов записи информации и селективного травления в халькогенидных полупроводниках. Смоделирован процесс получения информационных питов необходимой формы и размеров в неорганическом резисте, используя сфокусированный гауссовский лазерный пучок и селективное травление. Показано, что сечение фототрансформированной области может изменяться от практически трапециевидного до параболического в зависимости от коэффициента оптического поглощения, мощности лазерного пучка, экспозиции, селективности травителя и времени травления. Пространственное распределение доли фототрансформированного материала рассчитано из уравнения Колмогорова-Аврами. Проанализированы полученные результаты и выведено достаточно простое приближенное аналитическое выражение для зависимости ширины и высоты фототрансформированной области от мощности лазерного пучка, его радиуса, времени экспонирования и селективности травителя. Полученные результаты хорошо описывают характеристики питов, записанных в тонких слоях халькогенида As₄₀S₆₀. Модель открывает реальную возможность выбора условий записи и травления резиста, необходимых для получения питов с оптимальными размерами

The new approach to identification of film reflecting holographic marks

The new approach for creation of film reflecting holographic marks for optical security is proposed. Such marks are replicas of a reflecting master hologram recorded on a chalcogenide glass layer. To receive the master hologram, the joint power spectrum of a reference phase mask and an input phase mask or a transformed phase mask is produced at the plane of the hologram writing and is modulated by an inclined laser beam. If an inclined laser beam illuminates the replica recorded on a flexible substrate, phase noise including speckle noise is eliminated because the hologram carrier frequency exceeds greatly the limiting frequency of the phase noise power spectrum. Experimental results have shown the principal possibility to produce the high performance film reflecting holographic marks for security applications. The proposed approach can be combined with technologies for fabrication of rainbow holograms. In this case, the received rainbow holograms are the reflecting holographic marks simultaneously. Therefore, they can be verified not only visually, but also by means of automatic identification