Worrying and rumination are both associated with reduced cognitive control

Persistent negative thought is a hallmark feature of both major depressive disorder and generalized anxiety disorder. Despite its clinical significance, little is known about the underlying mechanisms of persistent negative thought. Recent studies suggest that reduced cognitive control might be an explanatory factor. We investigated the association between persistent negative thought and switching between internal representations in working memory, using the internal shift task (IST). The IST was administered to a group of undergraduates, classified as high-ruminators versus low-ruminators, or high-worriers versus low-worriers. Results showed that high-ruminators and high-worriers have more difficulties to switch between internal representations in working memory as opposed to low-ruminators and low-worriers. Importantly, results were only significant when the negative stimuli used in the IST reflected personally relevant worry themes for the participants. The results of this study indicate that rumination and worrying are both associated with reduced cognitive control for verbal information that is personally relevant

Predicted band structures of III-V semiconductors in wurtzite phase

While non-nitride III-V semiconductors typically have a zincblende structure, they may also form wurtzite crystals under pressure or when grown as nanowhiskers. This makes electronic structure calculation difficult since the band structures of wurtzite III-V semiconductors are poorly characterized. We have calculated the electronic band structure for nine III-V semiconductors in the wurtzite phase using transferable empirical pseudopotentials including spin-orbit coupling. We find that all the materials have direct gaps. Our results differ significantly from earlier {\it ab initio} calculations, and where experimental results are available (InP, InAs and GaAs) our calculated band gaps are in good agreement. We tabulate energies, effective masses, and linear and cubic Dresselhaus zero-field spin-splitting coefficients for the zone-center states. The large zero-field spin-splitting coefficients we find may lead to new functionalities for designing devices that manipulate spin degrees of freedom

Spin properties of single electron states in coupled quantum dots

Spin properties of single electron states in laterally coupled quantum dots in the presence of a perpendicular magnetic field are studied by exact numerical diagonalization. Dresselhaus (linear and cubic) and Bychkov-Rashba spin-orbit couplings are included in a realistic model of confined dots based on GaAs. Group theoretical classification of quantum states with and without spin orbit coupling is provided. Spin-orbit effects on the g-factor are rather weak. It is shown that the frequency of coherent oscillations (tunneling amplitude) in coupled dots is largely unaffected by spin-orbit effects due to symmetry requirements. The leading contributions to the frequency involves the cubic term of the Dresselhaus coupling. Spin-orbit coupling in the presence of magnetic field leads to a spin-dependent tunneling amplitude, and thus to the possibility of spin to charge conversion, namely spatial separation of spin by coherent oscillations in a uniform magnetic field. It is also shown that spin hot spots exist in coupled GaAs dots already at moderate magnetic fields, and that spin hot spots at zero magnetic field are due to the cubic Dresselhaus term only.Comment: 16 pages, 12 figure

Quantum Spectra of Triangular Billiards on the Sphere

We study the quantal energy spectrum of triangular billiards on a spherical surface. Group theory yields analytical results for tiling billiards while the generic case is treated numerically. We find that the statistical properties of the spectra do not follow the standard random matrix results and their peculiar behaviour can be related to the corresponding classical phase space structure.Comment: 18 pages, 5 eps figure

Generation of spin currents and spin densities in systems with reduced symmetry

We show that the spin-current response of a semiconductor crystal to an external electric field is considerably more complex than previously assumed. While in systems of high symmetry only the spin-Hall components are allowed, in systems of lower symmetry other non-spin-Hall components may be present. We argue that, when spin-orbit interactions are present only in the band structure, the distinction between intrinsic and extrinsic contributions to the spin current is not useful. We show that the generation of spin currents and that of spin densities in an electric field are closely related, and that our general theory provides a systematic way to distinguish between them in experiment. We discuss also the meaning of vertex corrections in systems with spin-orbit interactions.Comment: 4 page

Heterovalent interlayers and interface states: an ab initio study of GaAs/Si/GaAs (110) and (100) heterostructures

We have investigated ab initio the existence of localized states and resonances in abrupt GaAs/Si/GaAs (110)- and (100)-oriented heterostructures incorporating 1 or 2 monolayers (MLs) of Si, as well as in the fully developed Si/GaAs (110) heterojunction. In (100)-oriented structures, we find both valence- and conduction-band related near-band edge states localized at the Si/GaAs interface. In the (110) systems, instead, interface states occur deeper in the valence band; the highest valence-related resonances being about 1 eV below the GaAs valence-band maximum. Using their characteristic bonding properties and atomic character, we are able to follow the evolution of the localized states and resonances from the fully developed Si/GaAs binary junction to the ternary GaAs/Si/GaAs (110) systems incorporating 2 or 1 ML of Si. This approach also allows us to show the link between the interface states of the (110) and (100) systems. Finally, the conditions for the existence of localized states at the Si/GaAs (110) interface are discussed based on a Koster-Slater model developed for the interface-state problem.Comment: REVTeX 4, 14 pages, 15 EPS figure

Scientific Expertise in Child Protection Policies and Juvenile Justice Practices in Twentieth-Century Belgium

Modern society cannot function without experts and yet we increasingly question the authority of those who advise us. The essays in this collection explore our reliance on experts within a historical context and across a wide range of fields, including agriculture, engineering, health sciences and labour management. Contributors argue that experts were highly aware of their audiences and used performance to gain both scientific and popular support

The Effects of Rumination Induction on Attentional Breadth for Self-Related Information

The attentional scope model of rumination describes the links between rumination and attentional breadth. The model postulates that a more narrow attentional scope, caused by negative mood, increases the likelihood that thoughts become repetitive on the same topic, which in turn could exacerbate negative mood and lead to more attentional narrowing. We experimentally tested this model by examining the attentional effects of rumination using a newly developed rumination- versus problem-solving induction. In the first experiment we found that only at high levels of trait rumination, induction of rumination compared to a problem-solving approach was associated with more attentional narrowing for self-related information relative to other-related information. A second experiment on the relationship between trait rumination and attentional breadth in the absence of induced rumination, revealed that especially trait brooding was related to more narrowed attention for self-related information relative to other-related information

In-situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects

Combined in-situ x-ray photoemission spectroscopy, scanning tunnelling spectroscopy and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi2Te3 on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without a contribution from the bulk bands at the Fermi energy. The absence of bulk states at the Fermi energy is achieved without counter doping. We observe that the surface morphology and electronic band structure of Bi2Te3 are not affected by in-vacuo storage and exposure to oxygen, whereas major changes are observed when exposed to ambient conditions. These films help define a pathway towards intrinsic topological devices.Comment: 8 pages, 5 figure