Kinetics of epitaxial formation of nanostructures by Frank-van der Merwe, Volmer-Weber and Stranski-Krastanow growth modes

Nowadays, two-dimensional crystals (2D materials) and structures with quantum dots (0D materials) are considere

Accumulation and annealing of radiation donor defects in arsenic-implanted Hg0.7Cd0.3Te films

Processes of accumulation and annealing of radiation-induced donor defects in arsenic-implanted Hg0.7Cd0.3Te films were studied with the use of the Hall-effect measurements with processing the data with mobility spectrum analysis. A substantial difference in the effects of arsenic implantation and post-implantation activation annealing on the properties of implanted layers and photodiode ‘base’ layers in Hg0.7Cd0.3Te and Hg0.8Cd0.2Te films was established and tentatively explained

Localization and nature of radiation donor defects in the arsenic implanted CdHgTe films grown by MBE

By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular bea

Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition

In this work the experimental results of investigations of the dynamics of accumulation and spatial distribution of electrically active radiation defects when irradiating epitaxial films of Hg1-xCdxTe (MCT) with different material composition (x). The films, grown by molecular beam epitaxy (MBE) were irradiated by B ions at room temperature in the radiation dose range 1012 -1015 ions/cm2 and with ion energy 100 keV. The results give the differences in implantation profiles, damage accumulation and electrical properties as a function of the material composition of the film

Properties of arsenic-implanted Hg1-xCdxTe MBE films

Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation with more energetic arsenic ions (350 keV vs 190 keV). 100%-activation of implanted ions as a result of post-implantation annealing was achieved, as well as the effective removal of radiation-induced donor defects. In some samples, however, activation of acceptor-like defects not related to mercury vacancies as a result of annealing was observed, possibly related to the effect of the substrate

Fluence dependence of nanosize defect layers in arsenic implanted HgCdTe epitaxial films studied with TEM/HRTEM

We report on the results of comparative study of fluence dependence of defect layers in molecular-beam epitaxy-grown epitaxial film of p-Hg1-х CdхTe (х=0.22) implanted with arsenic ions with 190 keV energy and fluence 1012, 1013, and 1014 cm-2

Discrete mobility-spectrum analysis and its application to transport studies in HgCdTe

A detailed consideration of the discrete mobility-spectrum analysis (DMSA) method and its application to transport studies in HgCdTe is given. First, a brief review of the methods of the analysis of field dependences of the Hall coefficient and conductivity in HgCdTe-based structures with a multi-carrier mobility spectrum is presented. The advantages and drawbacks of these methods, which include original mobility-spectrum analysis by Beck and Anderson, multi-carrier fitting and iterative approach by Dziuba and Górska, and the later developments of these techniques, are considered. The properties of the envelope of the mobility spectrum are analyzed, and the specifics of DMSA are presented. Analysis of some magnetic-field B dependences of conductivity tensor components σxx(B) and σxy(B) presented in the literature is performed with DMSA, and the results are compared to those obtained with other methods

Determination of the parameters of multi-carrier spectrum in CdHgTe. II. Discrete mobility spectrum analysis

The paper, which consists of two parts, considers in detail the method of discrete mobility spectrum analysis (DMSA) proposed by the authors as well as its application to determine the parameters of charge carriers in CdHgTe. The first part of the work was a brief review of the existing methods for analyzing the field dependences of the Hall coefficient and conductivity in structures with a multi-carrier spectrum of charge carriers. In the second part of the work, the physical properties of the mobility spectrum envelope in the mobility spectrum analysis (MSA) method are analyzed and the main idea, features, and algorithm of the DMSA method are presented. On the example of studying the electrical properties of numerous samples of CdHgTe epitaxial films, the high sensitivity of the DMSA was confirmed. Using DMSA, we analyzed a number of dependences of the conductivity tensor components σxx and σxy on the magnetic field B, available in the literature, and compared the results of the analysis with those obtained with other methods

Determination of the parameters of multi-carrier spectrum in CdHgTe. I. A review of mobility spectrum analysis methods

The paper consisting of two parts presents a detailed consideration of the proposed method of discrete mobility spectrum analysis and its application for studying the parameters of charge carriers in CdHgTe. The first part of the paper is a brief review of the existing methods of the analysis of the magnetic-field dependences of the Hall coefficient and conductivity in structures with a multi-carrier spectrum. The underlying principles of various methods are considered, including the original mobility spectrum analysis proposed by Beck and Anderson, the multi-carrier fitting, and the iterative method developed by Dziuba and Górska, as well as more recent developments. The advantages, drawbacks, and limits of applicability of these methods are iscussed