Brian A. Korgel, professor d'Enginyeria Química a la Universitat de Texas

Durant el mes de juny, la Facultat de Ciències de la UAB ha acollit la primera edició del Nanotechnology Innovation, un curs que ha fusionat conceptes clau en nanotecnologia amb principis d'innovació, creativitat, creació de negoci, emprenedoria, propietat intel·lectual i en general, de l'entorn econòmic global. El programa ha estat organitzat conjuntament per la Universitat Autònoma de Barcelona i la Universitat de Texas, amb la col·laboració del Barcelona Nanotechnology Cluster Bellatera. El professor Brian A.Korgel de la Universitat de Texas i la Dra Gemma Garcia del departament de física i coordinadora adjunta del grau de nanociència i nanotecnologia han estat els encarregats de conduir el programa

Precision Synthesis of Silicon Nanowires with Crystalline Core and Amorphous Shell

A synthetic route to crystalline silicon (Si) nanowires with an amorphous Si shell is reported. Trisilane (Si3H8) and Sn(HMDS)(2) are decomposed in supercritical toluene at 450 degrees C. Sn(HMDS)(2) creates Sn nanoparticles that seed Si nanowire growth by the supercritical fluid-liquid-solid (SFLS) mechanism. The Si : Sn ratio in the reaction determines the growth of amorphous Si shell. No amorphous shell forms at relatively low Si : Sn ratios of 20 : 1, whereas higher Si : Sn ratio of 40 : 1 leads to significant amorphous shell. We propose that hydrogen evolved from trisilane decomposition etches away the Sn seed particles as nanowires grow, which promotes the amorphous Si shell deposition when the higher Si : Sn ratios are used.Robert A. Welch Foundation F-1464U.S. Department of Energy Office of Science, Office of Basic Energy Sciences DE-SC0001091National Defense Science and Engineering Graduate FellowshipChemistr

Colloidal Silicon-Germanium Nanorod Heterostructures

Colloidal nanorods with axial Si and Ge heterojunction segments were produced by solution-liquid-solid (SLS) growth using Sn as a seed metal and trisilane and diphenylgermane as Si and Ge reactants. The low solubility of Si and Ge in Sn helps to generate abrupt Si-Ge heterojunction interfaces. To control the composition of the nanorods, it was also necessary to limit an undesired side reaction between the Ge reaction byproduct tetraphenylgermane and trisilane. High-resolution transmission electron microscopy reveals that the Si-Ge interfaces are epitaxial, which gives rise to a significant amount of bond strain resulting in interfacial misfit dislocations that nucleate stacking faults in the nanorods

Tuning Multipolar Mie Scattering of Particles on a Dielectric-Covered Mirror

Optically resonant particles are key building blocks of many nanophotonic devices such as optical antennas and metasurfaces. Because the functionalities of such devices are largely determined by the optical properties of individual resonators, extending the attainable responses from a given particle is highly desirable. Practically, this is usually achieved by introducing an asymmetric dielectric environment. However, commonly used simple substrates have limited influences on the optical properties of the particles atop. Here, we show that the multipolar scattering of silicon microspheres can be effectively modified by placing the particles on a dielectric-covered mirror, which tunes the coupling between the Mie resonances of microspheres and the standing waves and waveguide modes in the dielectric spacer. This tunability allows selective excitation, enhancement, and suppression of the multipolar resonances and enables scattering at extended wavelengths, providing new opportunities in controlling light-matter interactions for various applications. We further demonstrate with experiments the detection of molecular fingerprints by single-particle mid-infrared spectroscopy, and, with simulations strong optical repulsive forces that could elevate the particles from a substrate.Comment: 16 pages, 4 figure

Enhanced Open-Circuit Voltage of Wide-Bandgap Perovskite Photovoltaics by Using Alloyed (FA1–xCsx)Pb(I1–xBrx)3 Quantum Dots

We report a detailed study on APbX3 (A=Formamidinium (FA+), Cs+; X=I-, Br-) perovskite quantum dots (PQDs) with combined A- and X-site alloying that exhibit, both, a wide bandgap and high open circuit voltage (Voc) for the application of a potential top cell in tandem junction photovoltaic (PV) devices. The nanocrystal alloying affords control over the optical bandgap and is readily achieved by solution-phase cation and anion exchange between previously synthesized FAPbI3 and CsPbBr3 PQDs. Increasing only the Br- content of the PQDs widens the bandgap but results in shorter carrier lifetimes and associated Voc losses in devices. These deleterious effects can be mitigated by replacing Cs+ with FA+, resulting in wide bandgap PQD absorbers with improved charge-carrier mobility and PVs with higher Voc. Although further device optimization is required, these results demonstrate the potential of FA1–xCsx)Pb(I1–xBrx)3 PQDs for wide bandgap perovskite PVs with high Voc

Compositional fluctuations mediated by excess of tellurium in bismuth antimony telluride nanocomposite yields high thermoelectric performance

A high thermoelectric figure of merit (ZT) in state-of-the-art bismuth antimony telluride (BST) composites was attained by an excess tellurium-assisted liquid-phase compaction approach. Herein, we report a maximum ZT of approximate to 1.4 at 500 K attained for BST bulk nanocomposites fabricated by spark plasma sintering of colloidally synthesized (Bi,Sb)(2)Te-3 platelets and Te-rich rods. The Terich nanodomains and antimony precipitation during sintering result in compositional fluctuations and atomic ordering within the BST-Te eutectic microstructure, which provides additional phonon scattering and hole contributions. The electrical transport measurement and theoretical calculations corroborate the altered free carrier density via lattice defects and atomic ordering under Te-rich conditions, resulting in a higher power factor. Microstructural studies suggest that reduction in lattice thermal conductivity is due to composite interfaces and defects in the closely packed (Bi,Sb)(2)Te-3 matrix with unevenly distributed Sband Te-rich nanodomains. This work provides an unconventional chemical synthesis route with large scalability for developing high-performance chalcogenide-based bulk nanocomposites for thermoelectric applications.- We thank the members of the Nanochemistry Research Group (http://nanochemgroup.org) at INL for insightful discussions and support. This work was supported by the Portuguese national funding agency for science, research, and technology (FCT) under the UT-BORN-PT project (UTAP-EXPL/CTE/0050/2017), strategic project UID/FIS/04650/2020, Project SATRAP (POCI-01-0145-FEDER-028108) and Advanced Computing Project CPCA/A2/4513/2020 for access to MACC-BOB HPC resources. B.A.K. acknowledges funding of this work by the Robert A. Welch Foundation (grant no. F1464). N.S.C. and T.M. acknowledge SERB, India (project no. SPO/SERB/MET/2018547) for financial support

Uniform selenization of crack-free films of Cu(In,Ga)Se2 nanocrystals

Crack-free films of Cu(In,Ga)Se2 (CIGS) nanocrystals were deposited with uniform thickness (>1 μm) on Mo-coated glass substrates using an ink-based, automated ultrasonic spray process, then selenized and incorporated into photovoltaic devices (PVs). The device performance depended strongly on the homogeneity of the selenized films. Cracks in the spray-deposited films resulted in uneven selenization rates and sintering by creating paths for rapid, uncontrollable selenium (Se) vapor penetration. To make crack-free films, the nanocrystals had to be completely coated with capping ligands in the ink. The selenization rate of crack-free films then depended on the thickness of the nanocrystal layer, the temperature, and duration of Se vapor exposure. Either inadequate or excessive Se exposure leads to poor device performance, generating films that were either partially sintered or exhibited significant accumulation of carbon and selenium. The deposition of uniform nanocrystal films is expected to be important for a variety of electronic and optoelectronic device applications.Fil: Harvey, Taylor B.. Texas A&M University; Estados UnidosFil: Bonafé, Franco Paúl. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Investigaciones en Físico-química de Córdoba. Universidad Nacional de Córdoba. Facultad de Ciencias Químicas. Instituto de Investigaciones en Físico-química de Córdoba; ArgentinaFil: Updegrave, Ty. University of Texas at Austin; Estados UnidosFil: Voggu, Vikas Reddy. University of Texas at Austin; Estados UnidosFil: Thomas, Cherrelle. University of Texas at Austin; Estados UnidosFil: Kamarajugadda, Sirish C.. University of Texas at Austin; Estados UnidosFil: Stolle, C. Jackson. University of Texas at Austin; Estados UnidosFil: Pernik, Douglas. University of Texas at Austin; Estados UnidosFil: Du, Jiang. University of Texas at Austin; Estados UnidosFil: Korgel, Brian A.. University of Texas at Austin; Estados Unido