Resistance noise in Bi_2Sr_2CaCu_2O8+δ_{8+\delta}

The resistance noise in a Bi_2Sr_2CaCu_2O$_{8+\delta}$ thin film is found to increase strongly in the underdoped regime. While the increase of the raw resistance noise with decreasing temperature appears to roughly track the previously reported pseudogap temperature for this material, standard noise analysis rather suggests that the additional noise contribution is driven by the proximity of the superconductor-insulator transition

First evidence for charge ordering in NaV2_2O5_5 from Raman spectroscopy

We argue on the basis of symmetry selection rules and Raman scattering spectra that NaV$_2$O$_5$ undergoes a charge ordering phase transition at T$_c$=34 K. Such a transition is characterized by the redistribution of the charges at the phase transition and corresponds to the change of the vanadium ions, from uniform V$^{4.5+}$ to two different V$^{4+}$ and V$^{5+}$ states. In the low temperature phase the V$^{4+}$ ions are forming a "zig-zag" ladder structure along the {\bf b}-axis, consistent with the symmetry of the P2/b space group.Comment: to be published in solid state communication

Hall effect in the normal state of high Tc cuprates

We propose a model for explaining the dependence in temperature of the Hall effect of high Tc cuprates in the normal state in various materials. They all show common features: a decrease of the Hall coefficient RH with temperature and a universal law, when plotting RH(T)/RH(T0) versus T/T0, where T0 is defined from experimental results. This behaviour is explained by using the well known electronic band structure of the CuO2 plane, showing saddle points at the energies ES in the directions (0,+/-pi) and (+/-pi,0). We remark that in a magnetic field, for energies E>ES the carrier orbits are hole-like and for E<ES they are electron-like, giving opposite contributions to RH. We are abble to fit the experimental results for a wide range of hole doping, and to fit the universal curve. For us kb*T0 is simply EF-ES, where EF is the Fermi level varying with the doping.Comment: 7 pages, 11 figure

Optical properties of NaxV2O5

The optical properties of sodium-deficient NaxV2O5 (0.85 < x <1) single crystals are analyzed in the wide energy range, from 0.012 to 4.5 eV, using ellipsometry, infrared reflectivity, and Raman scattering techniques. The material remains insulating up to the maximal achieved hole concentration of about 15%. In sodium deficient samples the optical absorption peak associated to the fundamental electronic gap develops at about 0.44 eV. It corresponds to the transition between vanadium dxy and the impurity band, which forms in the middle of the pure NaV2O5 gap. Raman spectra measured with incident photon energy larger then 2 eV show strong resonant behavior, due to the presence of the hole-doping activated optical transitions, peaked at 2.8 eV.Comment: 7 pages, 4 fugures, to be published in PR

The in-plane electrodynamics of the superconductivity in Bi2Sr2CaCu2O8+d: energy scales and spectral weight distribution

The in-plane infrared and visible (3 meV-3 eV) reflectivity of Bi2Sr2CaCu2O8+d (Bi-2212) thin films is measured between 300 K and 10 K for different doping levels with unprecedented accuracy. The optical conductivity is derived through an accurate fitting procedure. We study the transfer of spectral weight from finite energy into the superfluid as the system becomes superconducting. In the over-doped regime, the superfluid develops at the expense of states lying below 60 meV, a conventional energy of the order of a few times the superconducting gap. In the underdoped regime, spectral weight is removed from up to 2 eV, far beyond any conventional scale. The intraband spectral weight change between the normal and superconducting state, if analyzed in terms of a change of kinetic energy is ~1 meV. Compared to the condensation energy, this figure addresses the issue of a kinetic energy driven mechanism.Comment: 13 pages with 9 figures include