22 research outputs found
Cerenkov generation of high-frequency confined acoustic phonons in quantum wells
We analyze the Cerenkov emission of high-frequency confined acoustic phonons
by drifting electrons in a quantum well. We find that the electron drift can
cause strong phonon amplification (generation). A general formula for the gain
coefficient, alpha, is obtained as a function of the phonon frequency and the
structure parameters. The gain coefficient increases sharply in the short-wave
region. For the example of a Si/SiGe/Si device it is shown that the
amplification coefficients of the order of hundreds of 1/cm can be achieved in
the sub-THz frequency range.Comment: 4 pages, 2 figures. Submitted to AP
Electron-phonon relaxation and excited electron distribution in zinc oxide and anatase
We propose a first-principle method for evaluations of the time-dependent
electron distribution function of excited electrons in the conduction band of
semiconductors. The method takes into account the excitations of electrons by
external source and the relaxation to the bottom of conduction band via
electron-phonon coupling. The methods permits calculations of the
non-equilibrium electron distribution function, the quasi-stationary
distribution function with steady-in-time source of light, the time of setting
of the quasi-stationary distribution and the time of energy loss via relaxation
to the bottom of conduction band. The actual calculations have been performed
for titanium dioxide in the anatase structure and zinc oxide in the wurtzite
structure. We find that the quasi-stationary electron distribution function for
ZnO is a fermi-like curve that rises linearly with increasing excitation energy
whereas the analogous curve for anatase consists of a main peak and a shoulder.
The calculations demonstrate that the relaxation of excited electrons and the
setting of the quasi-stationary distribution occur within the time no more than
500 fsec for ZnO and 100 fsec for anatase.
We also discuss the applicability of the effective phonon model with
energy-independent electron-phonon transition probability. We find that the
model only reproduces the trends in changing of the characteristic times
whereas the precision of such calculations is not high. The rate of energy
transfer to phonons at the quasi-stationary electron distribution also have
been evaluated and the effect of this transfer on the photocatalyses has been
discussed. We found that for ZnO this rate is about 5 times less than in
anatase.Comment: 21 p., 9 figure
Observation of optical phonon instability induced by drifting electrons in semiconductor nanostructures
We have experimentally proven the Cerenkov generation of optical phonons by drifting electrons in a semiconductor. We observe an instability of the polar optical phonons in nanoscale semiconductors that occurs when electrons are accelerated to very high velocities by intense electric fields. The instability is observed when the electron drift velocity is larger than the phase velocity of optical phonons and rather resembles a “sonic boom” for optical phonons. The effect is demonstrated in p–i–nsemiconductor nanostructures by using subpicosecond Raman spectroscopy