A theoretical investigation into the microwave spectroscopy of a phosphorus-donor charge-qubit in silicon: Coherent control in the Si:P quantum computer architecture

We present a theoretical analysis of a microwave spectroscopy experiment on a charge qubit defined by a P$_2^+$ donor pair in silicon, for which we calculate Hamiltonian parameters using the effective-mass theory of shallow donors. We solve the master equation of the driven system in a dissipative environment to predict experimental outcomes. We describe how to calculate physical parameters of the system from such experimental results, including the dephasing time, $T_2$, and the ratio of the resonant Rabi frequency to the relaxation rate. Finally we calculate probability distributions for experimentally relevant system parameters for a particular fabrication regime

Voltage Control of Exchange Coupling in Phosphorus Doped Silicon

Motivated by applications to quantum computer architectures we study the change in the exchange interaction between neighbouring phosphorus donor electrons in silicon due to the application of voltage biases to surface control electrodes. These voltage biases create electro-static fields within the crystal substrate, perturbing the states of the donor electrons and thus altering the strength of the exchange interaction between them. We find that control gates of this kind can be used to either enhance, or reduce the strength of the interaction, by an amount that depends both on the magnitude and orientation of the donor separation.Comment: 5 Pages, 5 Figure

Lentiviral vectors with amplified beta cell-specific gene expression.

An important goal of gene therapy is to be able to deliver genes, so that they express in a pattern that recapitulates the expression of an endogenous cellular gene. Although tissue-specific promoters confer selectivity, in a vector-based system, their activity may be too weak to mediate detectable levels in gene-expression studies. We have used a two-step transcriptional amplification system to amplify gene expression from lentiviral vectors using the human insulin promoter. In this system, the human insulin promoter drives expression of a potent synthetic transcription activator (the yeast GAL4 DNA-binding domain fused to the activation domain of the Herpes simplex virus-1 VP16 activator), which in turn activates a GAL4-responsive promoter, driving the enhanced green fluorescent protein reporter gene. Vectors carrying the human insulin promoter did not express in non-beta-cell lines, but expressed in murine insulinoma cell lines, indicating that the human insulin promoter was capable of conferring cell specificity of expression. The insulin-amplifiable vector was able to amplify gene expression five to nine times over a standard insulin-promoter vector. In primary human islets, gene expression from the insulin-promoted vectors was coincident with insulin staining. These vectors will be useful in gene-expression studies that require a detectable signal and tissue specificity

Total energy global optimizations using non orthogonal localized orbitals

An energy functional for orbital based $O(N)$ calculations is proposed, which depends on a number of non orthogonal, localized orbitals larger than the number of occupied states in the system, and on a parameter, the electronic chemical potential, determining the number of electrons. We show that the minimization of the functional with respect to overlapping localized orbitals can be performed so as to attain directly the ground state energy, without being trapped at local minima. The present approach overcomes the multiple minima problem present within the original formulation of orbital based $O(N)$ methods; it therefore makes it possible to perform $O(N)$ calculations for an arbitrary system, without including any information about the system bonding properties in the construction of the input wavefunctions. Furthermore, while retaining the same computational cost as the original approach, our formulation allows one to improve the variational estimate of the ground state energy, and the energy conservation during a molecular dynamics run. Several numerical examples for surfaces, bulk systems and clusters are presented and discussed.Comment: 24 pages, RevTex file, 5 figures available upon reques

Strain in epitaxial MnSi films on Si(111) in the thick film limit studied by polarization-dependent extended x-ray absorption fine structure

We report a study of the strain state of epitaxial MnSi films on Si(111) substrates in the thick film limit (100-500~\AA) as a function of film thickness using polarization-dependent extended x-ray absorption fine structure (EXAFS). All films investigated are phase-pure and of high quality with a sharp interface between MnSi and Si. The investigated MnSi films are in a thickness regime where the magnetic transition temperature $T_\mathrm{c}$ assumes a thickness-independent enhanced value of $\geq$43~K as compared with that of bulk MnSi, where $T_\mathrm{c} \approx 29~{\rm K}$. A detailed refinement of the EXAFS data reveals that the Mn positions are unchanged, whereas the Si positions vary along the out-of-plane [111]-direction, alternating in orientation from unit cell to unit cell. Thus, for thick MnSi films, the unit cell volume is essentially that of bulk MnSi --- except in the vicinity of the interface with the Si substrate (thin film limit). In view of the enhanced magnetic transition temperature we conclude that the mere presence of the interface, and its specific characteristics, strongly affects the magnetic properties of the entire MnSi film, even far from the interface. Our analysis provides invaluable information about the local strain at the MnSi/Si(111) interface. The presented methodology of polarization dependent EXAFS can also be employed to investigate the local structure of other interesting interfaces.Comment: 11 pages, 10 figure

Low energy excitations of double quantum dots in the lowest Landau level regime

We study the spectrum and magnetic properties of double quantum dots in the lowest Landau level for different values of the hopping and Zeeman parameters by means of exact diagonalization techniques in systems of N=6 and N=7 electrons and filling factor close to 2. We compare our results with those obtained in double quantum layers and single quantum dots. The Kohn theorem is also discussed.Comment: 23 pages, 4 figures, 1 table; references added; journal versio

Deformation of the Fermi surface in the extended Hubbard model

The deformation of the Fermi surface induced by Coulomb interactions is investigated in the t-t'-Hubbard model. The interplay of the local U and extended V interactions is analyzed. It is found that exchange interactions V enhance small anisotropies producing deformations of the Fermi surface which break the point group symmetry of the square lattice at the Van Hove filling. This Pomeranchuck instability competes with ferromagnetism and is suppressed at a critical value of U(V). The interaction V renormalizes the t' parameter to smaller values what favours nesting. It also induces changes on the topology of the Fermi surface which can go from hole to electron-like what may explain recent ARPES experiments.Comment: 5 pages, 4 ps figure

Ab Initio Calculation of Impurity Effects in Copper Oxide Materials

We describe a method for calculating, within density functional theory, the electronic structure associated with typical defects which substitute for Cu in the CuO2 planes of high-Tc superconducting materials. The focus is primarily on Bi2Sr2CaCu2O8, the material on which most STM measurements of impurity resonances in the superconducting state have been performed. The magnitudes of the effective potentials found for Zn, Ni and vacancies on the in-plane Cu sites in this host material are remarkably consistent with phenomenological fits of potential scattering models to STM resonance energies. The effective potential ranges are quite short, of order 1 A with weak long range tails, in contrast to some current models of extended potentials which attempt to fit STM data. For the case of Zn and Cu vacancies, the effective potentials are strongly repulsive, and states on the impurity site near the Fermi level are simply removed. The local density of states (LDOS) just above the impurity is nevertheless found to be a maximum in the case of Zn and a local minimum in case of the vacancy, in agreement with experiment. The Zn and Cu vacancy patterns are explained as due to the long-range tails of the effective impurity potential at the sample surface. The case of Ni is richer due to the Ni atom's strong hybridization with states near the Fermi level; in particular, the short range part of the potential is attractive, and the LDOS is found to vary rapidly with distance from the surface and from the impurity site. We propose that the current controversy surrounding the observed STM patterns can be resolved by properly accounting for the effective impurity potentials and wave-functions near the cuprate surface. Other aspects of the impurity states for all three species are discussed.Comment: 37 pp. pdf including figures, submitted to Phys. Rev.

Charge Distributions in Metallic Alloys: a Charge Excess Functional theory approach

Charge Distributions in Metallic Alloys: a Charge Excess Functional theory approachComment: 13 pages, 5 figure