9,731 research outputs found
A theoretical investigation into the microwave spectroscopy of a phosphorus-donor charge-qubit in silicon: Coherent control in the Si:P quantum computer architecture
We present a theoretical analysis of a microwave spectroscopy experiment on a
charge qubit defined by a P donor pair in silicon, for which we calculate
Hamiltonian parameters using the effective-mass theory of shallow donors. We
solve the master equation of the driven system in a dissipative environment to
predict experimental outcomes. We describe how to calculate physical parameters
of the system from such experimental results, including the dephasing time,
, and the ratio of the resonant Rabi frequency to the relaxation rate.
Finally we calculate probability distributions for experimentally relevant
system parameters for a particular fabrication regime
Voltage Control of Exchange Coupling in Phosphorus Doped Silicon
Motivated by applications to quantum computer architectures we study the
change in the exchange interaction between neighbouring phosphorus donor
electrons in silicon due to the application of voltage biases to surface
control electrodes. These voltage biases create electro-static fields within
the crystal substrate, perturbing the states of the donor electrons and thus
altering the strength of the exchange interaction between them. We find that
control gates of this kind can be used to either enhance, or reduce the
strength of the interaction, by an amount that depends both on the magnitude
and orientation of the donor separation.Comment: 5 Pages, 5 Figure
Lentiviral vectors with amplified beta cell-specific gene expression.
An important goal of gene therapy is to be able to deliver genes, so that they express in a pattern that recapitulates the expression of an endogenous cellular gene. Although tissue-specific promoters confer selectivity, in a vector-based system, their activity may be too weak to mediate detectable levels in gene-expression studies. We have used a two-step transcriptional amplification system to amplify gene expression from lentiviral vectors using the human insulin promoter. In this system, the human insulin promoter drives expression of a potent synthetic transcription activator (the yeast GAL4 DNA-binding domain fused to the activation domain of the Herpes simplex virus-1 VP16 activator), which in turn activates a GAL4-responsive promoter, driving the enhanced green fluorescent protein reporter gene. Vectors carrying the human insulin promoter did not express in non-beta-cell lines, but expressed in murine insulinoma cell lines, indicating that the human insulin promoter was capable of conferring cell specificity of expression. The insulin-amplifiable vector was able to amplify gene expression five to nine times over a standard insulin-promoter vector. In primary human islets, gene expression from the insulin-promoted vectors was coincident with insulin staining. These vectors will be useful in gene-expression studies that require a detectable signal and tissue specificity
Total energy global optimizations using non orthogonal localized orbitals
An energy functional for orbital based calculations is proposed, which
depends on a number of non orthogonal, localized orbitals larger than the
number of occupied states in the system, and on a parameter, the electronic
chemical potential, determining the number of electrons. We show that the
minimization of the functional with respect to overlapping localized orbitals
can be performed so as to attain directly the ground state energy, without
being trapped at local minima. The present approach overcomes the multiple
minima problem present within the original formulation of orbital based
methods; it therefore makes it possible to perform calculations for an
arbitrary system, without including any information about the system bonding
properties in the construction of the input wavefunctions. Furthermore, while
retaining the same computational cost as the original approach, our formulation
allows one to improve the variational estimate of the ground state energy, and
the energy conservation during a molecular dynamics run. Several numerical
examples for surfaces, bulk systems and clusters are presented and discussed.Comment: 24 pages, RevTex file, 5 figures available upon reques
Strain in epitaxial MnSi films on Si(111) in the thick film limit studied by polarization-dependent extended x-ray absorption fine structure
We report a study of the strain state of epitaxial MnSi films on Si(111)
substrates in the thick film limit (100-500~\AA) as a function of film
thickness using polarization-dependent extended x-ray absorption fine structure
(EXAFS). All films investigated are phase-pure and of high quality with a sharp
interface between MnSi and Si. The investigated MnSi films are in a thickness
regime where the magnetic transition temperature assumes a
thickness-independent enhanced value of 43~K as compared with that of
bulk MnSi, where . A detailed refinement of
the EXAFS data reveals that the Mn positions are unchanged, whereas the Si
positions vary along the out-of-plane [111]-direction, alternating in
orientation from unit cell to unit cell. Thus, for thick MnSi films, the unit
cell volume is essentially that of bulk MnSi --- except in the vicinity of the
interface with the Si substrate (thin film limit). In view of the enhanced
magnetic transition temperature we conclude that the mere presence of the
interface, and its specific characteristics, strongly affects the magnetic
properties of the entire MnSi film, even far from the interface. Our analysis
provides invaluable information about the local strain at the MnSi/Si(111)
interface. The presented methodology of polarization dependent EXAFS can also
be employed to investigate the local structure of other interesting interfaces.Comment: 11 pages, 10 figure
Low energy excitations of double quantum dots in the lowest Landau level regime
We study the spectrum and magnetic properties of double quantum dots in the
lowest Landau level for different values of the hopping and Zeeman parameters
by means of exact diagonalization techniques in systems of N=6 and N=7
electrons and filling factor close to 2. We compare our results with those
obtained in double quantum layers and single quantum dots. The Kohn theorem is
also discussed.Comment: 23 pages, 4 figures, 1 table; references added; journal versio
Deformation of the Fermi surface in the extended Hubbard model
The deformation of the Fermi surface induced by Coulomb interactions is
investigated in the t-t'-Hubbard model. The interplay of the local U and
extended V interactions is analyzed. It is found that exchange interactions V
enhance small anisotropies producing deformations of the Fermi surface which
break the point group symmetry of the square lattice at the Van Hove filling.
This Pomeranchuck instability competes with ferromagnetism and is suppressed at
a critical value of U(V). The interaction V renormalizes the t' parameter to
smaller values what favours nesting. It also induces changes on the topology of
the Fermi surface which can go from hole to electron-like what may explain
recent ARPES experiments.Comment: 5 pages, 4 ps figure
Ab Initio Calculation of Impurity Effects in Copper Oxide Materials
We describe a method for calculating, within density functional theory, the
electronic structure associated with typical defects which substitute for Cu in
the CuO2 planes of high-Tc superconducting materials. The focus is primarily on
Bi2Sr2CaCu2O8, the material on which most STM measurements of impurity
resonances in the superconducting state have been performed. The magnitudes of
the effective potentials found for Zn, Ni and vacancies on the in-plane Cu
sites in this host material are remarkably consistent with phenomenological
fits of potential scattering models to STM resonance energies. The effective
potential ranges are quite short, of order 1 A with weak long range tails, in
contrast to some current models of extended potentials which attempt to fit STM
data. For the case of Zn and Cu vacancies, the effective potentials are
strongly repulsive, and states on the impurity site near the Fermi level are
simply removed. The local density of states (LDOS) just above the impurity is
nevertheless found to be a maximum in the case of Zn and a local minimum in
case of the vacancy, in agreement with experiment. The Zn and Cu vacancy
patterns are explained as due to the long-range tails of the effective impurity
potential at the sample surface. The case of Ni is richer due to the Ni atom's
strong hybridization with states near the Fermi level; in particular, the short
range part of the potential is attractive, and the LDOS is found to vary
rapidly with distance from the surface and from the impurity site. We propose
that the current controversy surrounding the observed STM patterns can be
resolved by properly accounting for the effective impurity potentials and
wave-functions near the cuprate surface. Other aspects of the impurity states
for all three species are discussed.Comment: 37 pp. pdf including figures, submitted to Phys. Rev.
Charge Distributions in Metallic Alloys: a Charge Excess Functional theory approach
Charge Distributions in Metallic Alloys: a Charge Excess Functional theory
approachComment: 13 pages, 5 figure
- …