9,687 research outputs found

    Effects of microstructure architecture on the fracture of fibrous materials

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    Fibrous materials is one of the potential scaffolds used for tissue engineered constructs. One of prerequisite properties for tissue engineered construct is fracture property. The work here study the relationship between microstructure architecture and fracture behavior of fibrous networks by using finite element analysis. The result shows that fibrous networks are toughened by either reducing the fiber density or cross-link percentage of networks. Such implementation increases the degree of non-affine deformation and produces a more compliant response at the crack-tip region. The non-affine deformation in fibrous networks involves fiber movement like fiber rearrangement and reorientation, where such mechanisms allow stress delocalization to occur at the crack-tip region and results in a better fracture toughness of fibrous networks. The findings form this work provide the design guideline of fibrous materials with enhanced toughness for multiple applications

    Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures

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    To extract the room-temperature drift mobility and sheet carrier density of two-dimensional hole gas (2DHG) that form in Ge strained channels of various thicknesses in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures, the magnetic field dependences of the magnetoresistance and Hall resistance at temperature of 295 K were measured and the technique of maximum entropy mobility spectrum analysis was applied. This technique allows a unique determination of mobility and sheet carrier density of each group of carriers present in parallel conducting multilayers semiconductor heterostructures. Extremely high room-temperature drift mobility (at sheet carrier density) of 2DHG 2940 cm2 V–1 s–1 (5.11×1011 cm–2) was obtained in a sample with a 20 nm thick Ge strained channel

    Toughening in electrospun fibrous scaffolds

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    Electrospun scaffolds mimic the microstructure of structural collagenous tissues and have been widely used in tissue engineering applications. Both brittle cracking and ductile failure have been observed in scaffolds with similarly random fibrous morphology. Finite element analysis can be used to qualitatively examine the mechanics of these differing failure mechanisms. The finite element modeling demonstrates that the noncontinuum deformation of the network structure results in fiber bundle formation and material toughening. Such toughening is accommodated by varying fiber properties, including allowing large failure strains and progressive damage of the fibers.The authors acknowledge the support from the Ministry of Higher Education Malaysia, Khaow Tonsomboon, Daniel Strange, and Anne Bahnweg.This is the final published version. It first appeared at http://scitation.aip.org/content/aip/journal/aplmater/3/1/10.1063/1.4901450

    Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures

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    We performed systematic low-temperature (T = 350 mK–15 K) magnetotransport measurements on the two-dimensional hole gas with various sheet carrier densities Ps = (0.57–2.1)×1012 cm–2 formed in the strained Ge channel modulation-doped (MOD) SiGe heterostructures grown on Si substrates. It was found that the effective hole mass deduced by temperature dependent Shubnikov–de Hass oscillations increased monotonically from (0.087±0.05)m0 to (0.19±0.01)m0 with the increase of Ps, showing large band nonparabolicity in strained Ge. In contrast to this result, the increase of the mobility with increasing Ps (up to 29 000 cm2/V s) was observed, suggesting that Coulomb scattering played a dominant role in the transport of the Ge channel at low temperatures. In addition, the Dingle ratio of the transport time to the quantum lifetime was found to increase with increasing Ps, which was attributed to the increase of remote impurity scattering with the increase of the doping concentration in MOD SiGe layers

    Parts verification for multi-level-dependent demand manufacturing systems: a recognition and classification structure

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    This research has developed and implemented a part recognition and classification structure to execute parts verification in a multi-level dependent demand manufacturing system. The part recognition algorithm enables the parent and child relationship between parts to be recognised in a finite-capacitated manufacturing system. This algorithm was developed using SIMAN simulation language and implemented in a multi-level dependent demand manufacturing simulation model. The part classification structure enables the modelling of a multi-level dependent demand manufacturing between parts to be carried out effectively. The part classification structure was programmed using Visual Basic Application (VBA) and was integrated to the work-to-list generated from a simulated MRP model. This part classification structure was then implemented in the multi-level dependent demand manufacturing simulation model. Two stages of implementation, namely parameterisation and execution, of the part recognition and classification structure were carried out. A real case study was used and five detail steps of execution were processed. Simulation experiments and MRP were run to verify and validate the part recognition and classification structure. The results led to the conclusion that implementation of the recognition and classification structure has effectively verified the correct parts and sub-assemblies used for the correct product and order. No parts and sub-assemblies shortages were found, and the quantity required was produced. The scheduled release for some orders was delayed due to overload of the required resources. When the loading is normal, all scheduled release timing is adhered to. The recognition and classification structure has a robust design; hence it can be easily adapted to new systems parameter to study a different or more complex case

    Developing and applying a user-centered model for the design and implementation of information visualization tools

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    The objective of this paper is to show how approaches for user-centered information visualization design and development are being applied in the context of healthcare where users are not familiar with information visualization techniques. We base our design methods on user-centered frameworks in which 'prototyping' plays an important role in the process. We modify existing approaches to involve prototyping at an early stage of the process as the problem domain is assessed. We believe this to be essential, as it increases users' awareness of what information visualization techniques can offer them and that it enables users to participate more effectively in later stages of the design and development process. This also acts as a stimulus for engagement. The problem domain analysis stage of a pilot study using this approach is presented, in which techniques are being collaboratively developed with domain users from a healthcare institution. Our results suggest that this approach has engaged users, who are subsequently able to apply generic information visualization concepts to their domains and as a result are better equipped to take part in the subsequent collaborative design and development process

    Space-charge-limited flows in the quantum regime

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    This paper reviews the recent developments of space-charge-limited (SCL) flow or Child-Langmuir (CL) law in the quantum regime. According to the classical CL law for planar diodes, the current density scales as 3/23∕2’s power of gap voltage and to the inverse squared power of gap spacing. When the electron de Broglie wavelength is comparable or larger than the gap spacing, the classical SCL current density is enhanced by a large factor due to electron tunneling and exchange-correlation effects, and there is a new quantum scaling for the current density, which is proportional to the 1/21∕2’s power of gap voltage, and to the inverse fourth-power of gap spacing. It is also found that the classical concepts of the SCL flow such as bipolar flow, transit time, beam-loaded capacitance, emitted charge density, and magnetic insulation are no longer valid in quantum regime. In the quantum regime, there exists a minimum transit time of the SCL flows, in contrast to the classical solution. By including the surface properties of the emitting surface, there is a threshold voltage that is required to obtain the quantum CL law. The implications of the Fowler-Nordheim-like field emission in the presence of intense space charge over the nanometer scale is discussed.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/87757/2/056701_1.pd

    Electronic Structure of Electron-doped Sm1.86Ce0.14CuO4: Strong `Pseudo-Gap' Effects, Nodeless Gap and Signatures of Short Range Order

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    Angle resolved photoemission (ARPES) data from the electron doped cuprate superconductor Sm1.86_{1.86}Ce0.14_{0.14}CuO4_4 shows a much stronger pseudo-gap or "hot-spot" effect than that observed in other optimally doped nn-type cuprates. Importantly, these effects are strong enough to drive the zone-diagonal states below the chemical potential, implying that d-wave superconductivity in this compound would be of a novel "nodeless" gap variety. The gross features of the Fermi surface topology and low energy electronic structure are found to be well described by reconstruction of bands by a 2×2\sqrt{2}\times\sqrt{2} order. Comparison of the ARPES and optical data from the samesame sample shows that the pseudo-gap energy observed in optical data is consistent with the inter-band transition energy of the model, allowing us to have a unified picture of pseudo-gap effects. However, the high energy electronic structure is found to be inconsistent with such a scenario. We show that a number of these model inconsistencies can be resolved by considering a short range ordering or inhomogeneous state.Comment: 5 pages, 4 figure
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