Electron energy relaxation under terahertz excitation in (Cd1−xZnx)3As2 Dirac semimetals

We demonstrate that measurements of the photo-electromagnetic effect using terahertz laser radiation provide an argument for the existence of highly conductive surface electron states with a spin texture in Dirac semimetals (Cd₁-xZnx)₃As

Синтез и магнетосопротивление кристаллов (Cd1−x Znx)3As2 (x = 0,007)

The vapor phase growth of Cd3As2—Zn3As2 (in the following (Cd1−x Znx)3As2 solid solutions process is described. The (Cd0,993 Zn0,007)3As2 solid solution single crystals were synthesized. Scanning electron microscopy and electron diffraction data suggest high crystalline quality of studied sample. Its structure and surface morphology, indicating the presence of growth nuclei and cleavage planes, were investigated. Giant anisotropic magnetoresistance and Shubnikov — de Haas oscillations were observed at low temperatures. Obtained results suggests that peculiarities of Dirac semimetal phase persist in (Cd1−x Znx)3As2 solid solution at low zinc content. At the same time, there are indications of some differences with initial Cd3As2 properties.Описана процедура синтеза твердых растворов Cd3As2—Zn3As2 (в дальнейшем, (Cd1−x Znx)3As2 из паровой фазы. Синтезированы монокристаллы твердого раствора (Cd0,993 Zn0,007)3As2. Результаты сканирующей электронной микроскопии и дифракции электронов свидетельствуют о высоком кристаллическом совершенстве изученного образца. Исследована его структура и морфология поверхности, содержащей ростовые зародыши и плоскости скола. В области низких температур выявлены гигантское анизотропное магнетосопротивление, а также осцилляции Шубникова—де Гааза. Полученные результаты указывают на сохранение особенностей фазы дираковского полуметалла для твердого раствора (Cd1−x Znx)3As2 с низким содержанием цинка. В то же время присутствуют указания на возможные отличия от свойств исходного материала Cd3As2

Electron energy relaxation under terahertz excitation in (Cd1−xZnx)3As2 Dirac semimetals

We demonstrate that measurements of the photo-electromagnetic effect using terahertz laser radiation provide an argument for the existence of highly conductive surface electron states with a spin texture in Dirac semimetals (Cd₁-xZnx)₃As

Electron energy relaxation in (Cd₁-xZnx)₃As₂ Dirac semimetals studied by terahertz laser pulses

We performed a study of a range of (Cd₁-xZnx)₃As₂ mixed crystals undergoing a transition from the Dirac semimetal phase to trivial semiconductor at variation of the composition x. We show that for the Dirac semimetal phase, the photoelectromagnetic effect amplitude is defined by the number of incident radiation quanta, whereas for the trivial semiconductor phase, it depends on the power in a laser pulse irrespective of its wavelengt

Electron energy relaxation in (Cd₁-xZnx)₃As₂ Dirac semimetals studied by terahertz laser pulses

We performed a study of a range of (Cd₁-xZnx)₃As₂ mixed crystals undergoing a transition from the Dirac semimetal phase to trivial semiconductor at variation of the composition x. We show that for the Dirac semimetal phase, the photoelectromagnetic effect amplitude is defined by the number of incident radiation quanta, whereas for the trivial semiconductor phase, it depends on the power in a laser pulse irrespective of its wavelengt

Electron energy relaxation under terahertz excitation in (Cd1− x Zn x )3As2 Dirac semimetals

We demonstrate that measurements of the photo-electromagnetic effect using terahertz laser radiation provide an argument for the existence of highly conductive surface electron states with a spin texture in Dirac semimetals (Cd1-xZnx)(3)As-2. We performed a study on a range of (Cd1-xZnx)(3)As-2 mixed crystals undergoing a transition from the Dirac semimetal phase with an inverse electron energy spectrum to trivial a semiconductor with a direct spectrum in the crystal bulk by varying the composition x. We show that for the Dirac semimetal phase, the photo-electromagnetic effect amplitude is defined by the number of incident radiation quanta, whereas for the trivial semiconductor phase, it depends on the laser pulse power, irrespective of wavelength. We assume that such behavior is attributed to a strong damping of the interelectron interaction in the Dirac semimetal phase compared to the trivial semiconductor, which may be due to the formation of surface electron states with a spin texture in Dirac semimetals

Spanish Anticausative Inherent Reciprocals and Syntactic Reciprocals with Se*

Este artículo explora la anticausatividad en español centrándose en un tipo de construcciones poco abordadas en este sentido. A pesar de la aparente homogeneidad formal de las construcciones recíprocas con se, este trabajo demuestra que hay dos tipos de estructuras bien diferenciadas y dependientes de propiedades semánticas asociadas con sus respectivas estructuras eventivas, dentro del heterogéneo marco de análisis de la inacusatividad. Este trabajo muestra que el clítico es una marca morfológica de concordancia en todas ellas, pero manifiesta diferentes funciones en cada una de las construcciones recíprocas: núcleo expletivo de Voz con casarse, núcleo causativo con mezclarse y una anáfora en posición de objeto con el resto de recíprocos sintácticos transitivos.Within the debate about the heterogeneity of unaccusative structures, the aim of this paper is to distinguish two types of Spanish marked anticausative inherent reciprocals (AIRs) from other syntactic reciprocals (SRs) with se. Several diagnostics show that AIRs such as mezclarse ‘get mixed’ are symmetric, unaccusative, telic, and show causative alternations, while SRs are transitive and vary in their aspectual properties and do not show causative alternations. The en/durante ‘in/for’ adverbials test reveals that there are two types of AIRs: achievements such as casarse ‘get married’, and degree achievements such as mezclarse ‘get mixed’. Although the clitic is an agreement marker in these reciprocal constructions, it is an expletive voice head with casarse, a causative head with mezclarse, and an anaphor merged in the internal argument position in SRs. Differences between AIRs and SRs depend on semantic properties associated to their respective event structures.Funding for open access charge: Universidad de Huelva/CBUA