Full coherent control of nuclear spins in an optically pumped single quantum dot

Highly polarized nuclear spins within a semiconductor quantum dot (QD) induce effective magnetic (Overhauser) fields of up to several Tesla acting on the electron spin or up to a few hundred mT for the hole spin. Recently this has been recognized as a resource for intrinsic control of QD-based spin quantum bits. However, only static long-lived Overhauser fields could be used. Here we demonstrate fast redirection on the microsecond time-scale of Overhauser fields of the order of 0.5 T experienced by a single electron spin in an optically pumped GaAs quantum dot. This has been achieved using full coherent control of an ensemble of 10^3-10^4 optically polarized nuclear spins by sequences of short radio-frequency (rf) pulses. These results open the way to a new class of experiments using rf techniques to achieve highly-correlated nuclear spins in quantum dots, such as adiabatic demagnetization in the rotating frame leading to sub-micro K nuclear spin temperatures, rapid adiabatic passage, and spin squeezing

Circuit Quantum Electrodynamics with a Spin Qubit

Circuit quantum electrodynamics allows spatially separated superconducting qubits to interact via a "quantum bus", enabling two-qubit entanglement and the implementation of simple quantum algorithms. We combine the circuit quantum electrodynamics architecture with spin qubits by coupling an InAs nanowire double quantum dot to a superconducting cavity. We drive single spin rotations using electric dipole spin resonance and demonstrate that photons trapped in the cavity are sensitive to single spin dynamics. The hybrid quantum system allows measurements of the spin lifetime and the observation of coherent spin rotations. Our results demonstrate that a spin-cavity coupling strength of 1 MHz is feasible.Comment: Related papers at http://pettagroup.princeton.edu

Electrical control over single hole spins in nanowire quantum dots

Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising alternative. Holes in III-V semiconductors have unique properties, such as strong spin-orbit interaction and weak coupling to nuclear spins, and therefore have potential for enhanced spin control and longer coherence times. Weaker hyperfine interaction has already been reported in self-assembled quantum dots using quantum optics techniques. However, challenging fabrication has so far kept the promise of hole-spin-based electronic devices out of reach in conventional III-V heterostructures. Here, we report gate-tuneable hole quantum dots formed in InSb nanowires. Using these devices we demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tuneable between hole and electron QDs, enabling direct comparison between the hyperfine interaction strengths, g-factors and spin blockade anisotropies in the two regimes

Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices

In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-type GaAs-AlGaAs resonant tunneling diodes (RTDs) containing a layer of InGaAs self-assembled quantum rings (QRs) in the quantum well (QW). All measurements were performed under applied voltage, magnetic fields up to 15 T and using linearly polarized laser excitation. It was observed that the QRs’ PL intensity and the circular polarization degree (CPD) oscillate periodically with applied voltage under high magnetic fields at 2 K. Our results demonstrate an effective voltage control of the optical and spin properties of InGaAs QRs inserted into RTDs

Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits

Controlling decoherence is the most challenging task in realizing quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among solid- state implementations, however strong coupling to nuclear spins in the substrate hinders this approach. To realize spin qubits in a nuclear-spin-free system, intensive studies based on group-IV semiconductor are being pursued. In this case, the challenge is primarily control of materials and interfaces, and device nanofabrication. We report important steps toward implementing spin qubits in a predominantly nuclear-spin-free system by demonstrating state preparation, pulsed gate control, and charge-sensing spin readout of confined hole spins in a one-dimensional Ge/Si nanowire. With fast gating, we measure T1 spin relaxation times in coupled quantum dots approaching 1 ms, increasing with lower magnetic field, consistent with a spin-orbit mechanism that is usually masked by hyperfine contributions

Controlling the Interaction of Electron and Nuclear Spins in a Tunnel-Coupled Quantum Dot

We present a technique for manipulating the nuclear spins and the emission polarization from a single optically active quantum dot. When the quantum dot is tunnel coupled to a Fermi sea, we have discovered a natural cycle in which an electron spin is repeatedly created with resonant optical excitation. The spontaneous emission polarization and the nuclear spin polarization exhibit a bistability. For a sigma(+) pump, the emission switches from sigma(+) to sigma(-) at a particular detuning of the laser. Simultaneously, the nuclear spin polarization switches from positive to negative. Away from the bistability, the nuclear spin polarization can be changed continuously from negative to positive, allowing precise control via the laser wavelength.Comment: 4 pages main article + 7 pages supplement, 4 + 2 figure