Variation of the character of spin-orbit interaction by Pt intercalation underneath graphene on Ir(111)

Under the terms of the Creative Commons Attribution License 3.0 (CC-BY).-- et al.The modification of the graphene spin structure is of interest for novel possibilities of application of graphene in spintronics. The most exciting of them demand not only high value of spin-orbit splitting of the graphene states, but non-Rashba behavior of the splitting and spatial modulation of the spin-orbit interaction. In this work we study the spin and electronic structure of graphene on Ir(111) with intercalated Pt monolayer. Pt interlayer does not change the 9.3×9.3 superlattice of graphene, while the spin structure of the Dirac cone becomes modified. It is shown that the Rashba splitting of the π state is reduced, while hybridization of the graphene and substrate states leads to a spin-dependent avoided-crossing effect near the Fermi level. Such a variation of spin-orbit interaction combined with the superlattice effects can induce a topological phase in graphene.The work was partially supported by grants of Saint Petersburg State University for scientific investigations (Grants No. 11.38.271.2014, No. 15.61.202.2015 and No. 11.37.634.2013) and Russian Foundation for Basic Research (RFBR) projects (No. 13-02-91327). We acknowledge the financial support of the University of Basque Country UPV/EHU (Grant No. GIC07-IT-756-13), the Departamento de Educacion del Gobierno Vasco, and the Spanish Ministerio de Ciencia e Innovacion (Grant No. FIS2010-19609-C02-01), the Spanish Ministry of Economy and Competitiveness MINECO (Grant No. FIS2013-48286-C2-1-P), and the Tomsk State University Competitiveness Improvement Program.Peer Reviewe

Variation of the character of spin-orbit interaction by Pt intercalation underneath graphene on Ir(111)

The modification of the graphene spin structure is of interest for novel possibilities of application of graphene in spintronics. The most exciting of them demand not only high value of spin-orbit splitting of the graphene states, but non-Rashba behavior of the splitting and spatial modulation of the spin-orbit interaction. In this work we study the spin and electronic structure of graphene on Ir(111) with intercalated Pt monolayer. Pt interlayer does not change the 9.3×9.3 superlattice of graphene, while the spin structure of the Dirac cone becomes modified. It is shown that the Rashba splitting of the π state is reduced, while hybridization of the graphene and substrate states leads to a spin-dependent avoided-crossing effect near the Fermi level. Such a variation of spin-orbit interaction combined with the superlattice effects can induce a topological phase in graphene

Giant magnetic band gap in the rashba-split surface state of vanadium-doped BiTeI: A combined photoemission and Ab initio study

One of the most promising platforms for spintronics and topological quantum computation is the two-dimensional electron gas (2DEG) with strong spin-orbit interaction and out-of-plane ferromagnetism. In proximity to an s-wave superconductor, such 2DEG may be driven into a topologically non-Trivial superconducting phase, predicted to support zero-energy Majorana fermion modes. Using angle-resolved photoemission spectroscopy and ab initio calculations, we study the 2DEG at the surface of the vanadium-doped polar semiconductor with a giant Rashba-Type splitting, BiTeI. We show that the vanadium-induced magnetization in the 2DEG breaks time-reversal symmetry, lifting Kramers degeneracy of the Rashba-split surface state at the Brillouin zone center via formation of a huge gap of about 90 meV. As a result, the constant energy contour inside the gap consists of only one circle with spin-momentum locking. These findings reveal a great potential of the magnetically-doped semiconductors with a giant Rashba-Type splitting for realization of novel states of matter.The work was partially supported by grant of Saint Petersburg State University for scientific investigations (N. 15.61.202.2015). This study was supported by the Russian Science Foundation (project N. 17-12-01047, in part of crystal growth, structural characterization and ARPES measurements (Figs 1, 2)). The funding by the University of the Basque Country (Grant Nos GIC07IT36607 and IT-756-13), the Spanish Ministry of Science and Innovation (Grant Nos FIS2013-48286-C02-02-P, FIS2013-48286-C02-01-P, and FIS2016-75862-P) and Tomsk State University Academic D.I. Mendeleev Fund Program in 2015 (research grant N 8.1.05.2015) are also gratefully acknowledged. The authors also acknowledge support from the Russian-German laboratory at BESSY II, the “German-Russian Interdisciplinary Science Center”(G-RISC) program and the Impuls- und Vernetzungsfonds der Helmholtz-Gemeinschaft (Grant No. HRJRG-408).Peer Reviewe

Magnetic Dirac semimetal state of (Mn,Ge)Bi2_2Te4_4

For quantum electronics, the possibility to finely tune the properties of magnetic topological insulators (TIs) is a key issue. We studied solid solutions between two isostructural Z$_2$ TIs, magnetic MnBi$_2$Te$_4$ and nonmagnetic GeBi$_2$Te$_4$, with Z$_2$ invariants of 1;000 and 1;001, respectively. For high-quality, large mixed crystals of Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$, we observed linear x-dependent magnetic properties, composition-independent pairwise exchange interactions along with an easy magnetization axis. The bulk band gap gradually decreases to zero for $x$ from 0 to 0.4, before reopening for $x>0.6$, evidencing topological phase transitions (TPTs) between topologically nontrivial phases and the semimetal state. The TPTs are driven purely by the variation of orbital contributions. By tracing the x-dependent $6p$ contribution to the states near the fundamental gap, the effective spin-orbit coupling variation is extracted. As $x$ varies, the maximum of this contribution switches from the valence to the conduction band, thereby driving two TPTs. The gapless state observed at $x=0.42$ closely resembles a Dirac semimetal above the Neel temperature and shows a magnetic gap below, which is clearly visible in raw photoemission data. The observed behavior of the Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$ system thereby demonstrates an ability to precisely control topological and magnetic properties of TIs

Specific features of the electronic, spin, and atomic structures of a topological insulator Bi2Te2.4Se0.6

The specific features of the electronic and spin structures of a triple topological insulator Bi2Te2.4Se0.6, which is characterized by high-efficiency thermoelectric properties, have been studied with the use of angular- and spin-resolved photoelectron spectroscopy and compared with theoretical calculations in the framework of the density functional theory. It has been shown that the Fermi level for Bi2Te2.4Se0.6 falls outside the band gap and traverses the topological surface state (the Dirac cone). Theoretical calculations of the electronic structure of the surface have demonstrated that the character of distribution of Se atoms on the Te–Se sublattice practically does not influence the dispersion of the surface topological electronic state. The spin structure of this state is characterized by helical spin polarization. Analysis of the Bi2Te2.4Se0.6 surface by scanning tunnel microscopy has revealed atomic smoothness of the surface of a sample cleaved in an ultrahigh vacuum, with a lattice constant of ~4.23 Å. Stability of the Dirac cone of the Bi2Te2.4Se0.6 compound to deposition of a Pt monolayer on the surface is shown.This study was supported by the Ministry of Education and Science of the Russian Federation, the St. Petersburg State University (project nos. 11.38.271.2014 and 15.61.202.2015), and the Russian Foundation for Basic Research (project nos. 12-02-00226, 13-02-91327, 14-08-31110, and 13-02-12110). The research was also performed at the Resource Center “Physical Methods of Surface Investigation” at St. Petersburg State University. We are also grateful to collaborators of the Helmholtz-Zentrum (Berlin) for financial and technical support.Peer reviewe

Impact of Co atoms on the electronic structure of Bi2Te3 and MnBi2Te4 topological insulators

This work is devoted to an experimental investigation of the electronic structure of the surface of topological insulators of various stoichiometry during the adsorption of Co atoms. Changes in the surface electronic structure of Bi2Te3 and MnBi2Te4 systems upon deposition of Co atoms at various temperatures have been studied using the methods of angle-resolved photoemission spectroscopy, as well as X-ray photoelectron spectroscopy. It is suggested that binding of the adsorbed Co atoms to the substrate surface modifies Dirac point position. The observed changes are associated with the possible formation of magnetic Co-containing ordered surface alloys.This work was supported by the St. Petersburg State University, grant no. 73028629, the Russian Science Foundation, grant no. 18-12-00062, the Russian Foundation for Basic Research, grant nos. 20-32-70127, 21-52-12024, and 18-29-12094, the Science Development Foundation of the President of Azerbaijan, grant no. EIF-BGM-4-RFTF-1/2017-21/04/1-M-02, and in the framework of the state assignment of Sobolev Institute of Geology and Mineralogy, Siberian Branch of the Russian Academy of Sciences, and the Rzhanov Institute of Semiconductors Physics, Siberian Branch of the Russian Academy of Sciences.Peer reviewe

Sample-dependent Dirac-point gap in MnBi2Te4 and its response to applied surface charge: A combined photoemission and ab initio study

Recently discovered intrinsic antiferromagnetic topological insulator MnBi2Te4 presents an exciting platform for realization of the quantum anomalous Hall effect and a number of related phenomena at elevated temperatures. An important characteristic making this material attractive for applications is its predicted large magnetic gap at the Dirac point (DP). However, while the early experimental measurements reported on large DP gaps, a number of recent studies claimed to observe a gapless dispersion of the MnBi2Te4 Dirac cone. Here, using micro(μ)-laser angle-resolved photoemission spectroscopy, we study the electronic structure of 15 different MnBi2Te4 samples, grown by two different chemists groups. Based on the careful energy distribution curves analysis, the DP gaps between 15 and 65 meV are observed, as measured below the Néel temperature at about 10–16 K. At that, roughly half of the studied samples show the DP gap of about 30 meV, while for a quarter of the samples the gaps are in the 50 to 60 meV range. Summarizing the results of both our and other groups, in the currently available MnBi2Te4 samples the DP gap can acquire an arbitrary value between a few and several tens of meV. Furthermore, based on the density functional theory, we discuss a possible factor that might contribute to the reduction of the DP gap size, which is the excess surface charge that can appear due to various defects in surface region. We demonstrate that the DP gap is influenced by the applied surface charge and even can be closed, which can be taken advantage of to tune the MnBi2Te4 DP gap size.The authors acknowledge support by the Saint Petersburg State University Grant No. ID 73028629, Russian Science Foundation Grant No. 18-12-00062 in part of the photoemission measurements and total analysis of the results, Grant No. 18-12-00169-p in part of the electronic band structure calculations and Grant No. 20-42-08002 in part of analysis of magnetic properties and Science Development Foundation under the President of the Republic of Azerbaijan Grant No. EI F-BGM-4-RFTF1/2017-21/04/1-M-02. M.M.O. acknowledges the support by Spanish Ministerio de Ciencia e Innovación (Grant No. PID2019-103910GB-I00). K.K. and O.E.T. acknowledge the support from state assignment of IGM SB RAS and ISP SB RAS.Peer reviewe

Nontrivial spin structure of graphene on Pt(111) at the Fermi level due to spin-dependent hybridization

The electronic and spin structure of a graphene monolayer synthesized on Pt(111) has been investigated experimentally by angle- and spin-resolved photoemission with different polarizations of incident synchrotron radiation and using density functional theory calculations. It is shown that despite the observed total quasifreestanding character of the dispersion of the graphene π state remarkable local distortions and breaks in the dispersions take place due to hybridization between the graphene π and Pt d states. Corresponding spin-dependent avoided-crossing effects lead to significant modification of the spin structure and cause an enhanced induced spin-orbit splitting of the graphene π states near the Fermi level in the region of the K¯ point of the graphene Brillouin zone (BZ) with a magnitude of 80-200 meV depending on the direction in the BZ. Using p, s, and elliptical polarizations of the synchrotron radiation, the contributions of the graphene π and Pt d states were separated and their intersection at the Fermi level, which is important for effective spin injection between these states, was shown. Moreover, analysis of the data allows us to conclude that in the region of the Dirac point the spin structure of the system cannot be described by a Rashba splitting, and even a spin-orbit gap between lower and upper Dirac cones is observed.The work was partially supported by a grant of Saint Petersburg State University for scientific investigations (Grant No. 11.38.271.2014) and Russian Foundation for Basic Research (RFBR) projects (Project No. 13-02-91327) and performed within the framework of collaboration between the Deutsche Forschungsgemeinschaft and Russian Foundation for Basic Research (Grant No. RA 1041/3-1). We acknowledge the financial support of the University of Basque Country UPV/EHU (Grant No. GIC07-IT-756-13), the Departamento de Educacion del Gobierno Vasco and the Spanish Ministerio de Ciencia e Innovacion (Grant No. FIS2010-19609-C02-01), Project FIS2013-48286-C2-1-P of the Spanish Ministry of Economy and Competitiveness MINECO, and the Tomsk State University Competitiveness Improvement Program.Peer Reviewe