On peculiar features of speech development in children with auditory perceptual disorders

The article is devoted to the issue of one of the most severe speech disorders in children commonly known as alalia.Статья посвящена проблеме наиболее грубых нарушений развития речи у детей, а именно алалиям

Rigid and flexible brain regions responsible for development of speech

Статья посвящена особенностям речевого развития детей, и в первую очередь его грубым нарушениям. Авторами обсуждаются разные формы алалии. Особое внимание уделяется слуховым агнозиям и артикуляционным апраксиям.The paper deals with the peculiarities of speech development of children and, first of all, dwells in detail on its severe disorders. The authors discuss different forms of alalia, the classification of which is based on the difference between their causal brain mechanisms

Specific features of written speech acquisition by children with non-standard profile of hemispheric asymmetry of the brain

This article describes rare variants of dyslexia and dysgraphia in primary school children.В настоящей статье описаны редкие варианты дислексий и дисграфий у детей младшего школьного возраста

From the Experience of Observation of Children with Severe Speech Development Disorders

В статье представлены результаты психолого-педагогической диагностики детей дошкольного возраста с тяжелыми нарушениями развития речи.This paper touches upon the problem of speechless children, which does not become less relevant despite the fact that a large number of studies have been devoted to it. The author attributes this to the fact that the causes of muteness have not been sufficiently revealed yet. Some of them are caused by auditory agnosias, while others are due to articulatory apraxias

Switching processes in TGS crystals irradiated by high-current electron beam

The relaxation processes study of the dielectric permittivity epsilon during commutation of the external electric field in triglycine sulphate (NH sub 2 CH sub 2 COOH) sub 3 centre dot H sub 2 SO sub 4 (TGS) single crystal plates before and after irradiation by a high-current pulsed electron beam with different doses at various temperatures is presented. The parameters of the electron beam produced by the accelerator facility as a source were: energy E = 250 keV, current density I = 1000 A/cm sup 2 , fluence F = 15 J/cm sup 2 , pulse duration tau = 300 ns, beam density 5 centre dot sup 1 5 electrons/cm sup 2 per pulse. It was shown that the dependences of epsilon (t) are described by the Kohlrausch law: epsilon (t) approx exp (-t/tau) supalpha, where alpha is the average relaxation time of the all volume samples, 0 < alpha <1. Besides, it was found that switching processes in the irradiated crystals were much more intensive than those in the non-irradiated ones. The relaxation times decrease with rising of temperature up to the phase transition during commutation of the small external electric field

Switching processes in TGS crystals irradiated by high-current electron beam

The relaxation processes study of the dielectric permittivity epsilon during commutation of the external electric field in triglycine sulphate (NH sub 2 CH sub 2 COOH) sub 3 centre dot H sub 2 SO sub 4 (TGS) single crystal plates before and after irradiation by a high-current pulsed electron beam with different doses at various temperatures is presented. The parameters of the electron beam produced by the accelerator facility as a source were: energy E = 250 keV, current density I = 1000 A/cm sup 2 , fluence F = 15 J/cm sup 2 , pulse duration tau = 300 ns, beam density 5 centre dot sup 1 5 electrons/cm sup 2 per pulse. It was shown that the dependences of epsilon (t) are described by the Kohlrausch law: epsilon (t) approx exp (-t/tau) supalpha, where alpha is the average relaxation time of the all volume samples, 0 < alpha < 1. Besides, it was found that switching processes in the irradiated crystals were much more intensive than those in the non-irradiated ones. The relaxation times decrease with rising of temperature up to the phase transition during commutation of the small external electric field