Switching processes in TGS crystals irradiated by high-current electron beam

Abstract

The relaxation processes study of the dielectric permittivity epsilon during commutation of the external electric field in triglycine sulphate (NH sub 2 CH sub 2 COOH) sub 3 centre dot H sub 2 SO sub 4 (TGS) single crystal plates before and after irradiation by a high-current pulsed electron beam with different doses at various temperatures is presented. The parameters of the electron beam produced by the accelerator facility as a source were: energy E = 250 keV, current density I = 1000 A/cm sup 2 , fluence F = 15 J/cm sup 2 , pulse duration tau = 300 ns, beam density 5 centre dot sup 1 5 electrons/cm sup 2 per pulse. It was shown that the dependences of epsilon (t) are described by the Kohlrausch law: epsilon (t) approx exp (-t/tau) supalpha, where alpha is the average relaxation time of the all volume samples, 0 < alpha <1. Besides, it was found that switching processes in the irradiated crystals were much more intensive than those in the non-irradiated ones. The relaxation times decrease with rising of temperature up to the phase transition during commutation of the small external electric field