Photoluminescence-based measurements of the energy gap and diffusion length of Zn_3P_2

The steady-state photoluminescence spectra of zinc phosphide (Zn_3P_2) wafers have revealed a fundamental indirect band gap at 1.38 eV, in close proximity to the direct band gap at 1.50 eV. These values are consistent with the values for the indirect and direct band gaps obtained from analysis of the complex dielectric function deduced from spectroscopic ellipsometric measurements. Bulk minority carrier lifetimes of 20 ns were observed by time-resolved photoluminescence decay measurements, implying minority-carrier diffusion lengths of ≥ 7 µm

Conformal GaP layers on Si wire arrays for solar energy applications

We report conformal, epitaxial growth of GaP layers on arrays of Si microwires. Silicon wires grown using chlorosilane chemical vapor deposition were coated with GaP grown by metal-organic chemical vapor deposition. The crystalline quality of conformal, epitaxial GaP/Si wire arrays was assessed by transmission electron microscopy and x-ray diffraction. Hall measurements and photoluminescence show p- and n-type doping with high electron mobility and bright optical emission. GaP pn homojunction diodes on planar reference samples show photovoltaic response with an open circuit voltage of 660 mV

Synthesis and surface chemistry of Zn_3P_2

Zinc phosphide (Zn_3P_2) is a promising alternative to traditional materials (e.g. CIGS, CdTe, a-Si) for thin film photovoltaics. Open circuit voltage in Zn_3P_2 cells has been limited by Fermi-level pinning due to surfaces states and heterojunction interdiffusion, motivating the need to prepare interfaces that are electrically passive and chemically inert. We investigated the surface chemistry of Zn_3P_2 via etching with bromine in methanol and passivation with ammonium sulfide in t-butanol. The treatment decreases surface oxidation as determined by x-ray photoelectron spectroscopy and provides a stable, low-defect interface as monitored by steady-state photoluminescence. Magnesium Schottky diodes fabricated with sulfur-passivated interfaces show evidence of enhanced barrier heights in comparison to control devices

Mg doping and alloying in Zn_3P_2 heterojunction solar cells

Zinc phosphide (Zn_3P_2) is a promising and earth-abundant alternative to traditional materials (e.g. CdTe, CIGS, a-Si) for thin film photovoltaics. We report the fabrication of Mg/Zn_3P_2 Schottky diodes with V_(oc) values reaching 550 mV, J_(sc) values up to 21.8 mA/cm^2, and photovoltaic efficiency reaching 4.5%. Previous authors have suggested that Mg impurities behave as n-type dopants in Zn_3P_2, but combined Hall effect measurements and Secondary Ion Mass Spectrometry (SIMS) show that 10^(17) to 10^(19) cm^(-3) Mg impurities compensate p-type doping to form highly resistive Zn_3P_2. Further device work with modified ITO/Mg/Zn_3P_2 heterojunctions suggests that the ITO capping layer improves a passivation reaction between Mg and Zn_3P_2 to yield high voltages > 500 mV without degradation in the blue response of the solar cell. These results indicate that at least 8-10% efficiency cell is realizable by the optimization of Mg treatment in Zn_3P_2 solar cells

Band alignment of epitaxial ZnS/Zn_(3)P_2 heterojunctions

The energy-band alignment of epitaxial zb-ZnS(001)/α-Zn_(3)P_(2)(001) heterojunctions has been determined by measurement of shifts in the phosphorus 2p and sulfur 2p core-level binding energies for various thicknesses (0.6–2.2 nm) of ZnS grown by molecular beam epitaxy on Zn_(3)P_(2). In addition, the position of the valence-band maximum for bulk ZnS and Zn3P2 films was estimated using density functional theory calculations of the valence-band density-of-states. The heterojunction was observed to be type I, with a valence-band offset, ΔE_V, of −1.19 ± 0.07 eV, which is significantly different from the type II alignment based on electron affinities that is predicted by Anderson theory. n^(+)-ZnS/p-Zn_(3)P_(2) heterojunctions demonstrated open-circuit voltages of >750 mV, indicating passivation of the Zn_(3)P_(2) surface due to the introduction of the ZnS overlayer. Carrier transport across the heterojunction devices was inhibited by the large conduction-band offset, which resulted in short-circuit current densities of <0.1 mA cm^(−2) under 1 Sun simulated illumination. Hence, constraints on the current density will likely limit the direct application of the ZnS/Zn_(3)P_(2) heterojunction to photovoltaics, whereas metal-insulator-semiconductor structures that utilize an intrinsic ZnS insulating layer appear promising

820 mV open-circuit voltages from Cu_(2)O/CH_(3)CN junctions

P-Type cuprous oxide (Cu_(2)O) photoelectrodes prepared by the thermal oxidation of Cu foils exhibited open-circuit voltages in excess of 800 mV in nonaqueous regenerative photoelectrochemical cells. In contact with the decamethylcobaltocene^(+/0) (Me_(10)CoCp_(2)^(+/0)) redox couple, cuprous oxide yielded open-circuit voltage, V_(oc), values of 820 mV and short-circuit current density, J_(sc), values of 3.1 mA cm^(−2) under simulated air mass 1.5 illumination. The energy-conversion efficiency of 1.5% was limited by solution absorption and optical reflection losses that reduced the short-circuit photocurrent density. Spectral response measurements demonstrated that the internal quantum yield approached unity in the 400–500 nm spectral range, but poor red response, attributable to bulk recombination, lowered the overall efficiency of the cell. X-Ray photoelectron spectroscopy and Auger electron spectroscopy indicated that the photoelectrodes had a high-quality cuprous oxide surface, and revealed no observable photocorrosion during operation in the nonaqueous electrolyte. The semiconductor/liquid junctions thus provide a noninvasive method to investigate the energy-conversion properties of cuprous oxide without the confounding factors of deleterious surface reactions

Passivation of Zn_3P_2 substrates by aqueous chemical etching and air oxidation

Surface recombination velocities measured by time-resolved photoluminescence and compositions of Zn_(3)P_2 surfaces measured by x-ray photoelectron spectroscopy (XPS) have been correlated for a series of wet chemical etches of Zn_(3)P_2 substrates. Zn_(3)P_2 substrates that were etched with Br_2 in methanol exhibited surface recombination velocity values of 2.8 × 10^4 cm s^(−1), whereas substrates that were further treated by aqueous HF–H_(2)O_2 exhibited surface recombination velocity values of 1.0 × 10^4 cm s^(−1). Zn_(3)P_2 substrates that were etched with Br_2 in methanol and exposed to air for 1 week exhibited surface recombination velocity values of 1.8 × 10^3 cm s^(−1), as well as improved ideality in metal/insulator/semiconductor devices

A Large Sample of BL Lacs from SDSS and FIRST

We present a large sample of 501 radio-selected BL Lac candidates from the combination of the Sloan Digital Sky Survey (SDSS) Data Release 5 optical spectroscopy and from the Faint Images of the Radio Sky at Twenty-Centimeters (FIRST) radio survey; this is one of the largest BL Lac samples yet assembled, and each object emerges with homogeneous data coverage. Each candidate is detected in the radio from FIRST and confirmed in SDSS optical spectroscopy to have: (1) no emission feature with measured rest equivalent width larger than 5 Angstroms; and (2) no measured Ca II H/K depression larger than 40%. We subdivide our sample into 426 higher confidence candidates and 75 lower confidence candidates. We argue that contamination from other classes of objects that formally pass our selection criteria is small, and we identify a few very rare radio AGN with unusual spectra that are probably related to broad absorption line quasars. About one-fifth of our sample were known BL Lacs prior to the SDSS. A preliminary analysis of the sample generally supports the standard beaming paradigm. While we recover sizable numbers of low-energy and intermediate-energy cutoff BL Lacs (LBLs and IBLs, respectively), there are indications of a potential bias toward recovering high-energy cutoff BL Lacs (HBLs) from SDSS spectroscopy. Such a large sample may eventually provide new constraints on BL Lac unification models and their potentially peculiar cosmic evolution; in particular, our sample contains a significant number of higher redshift objects, a sub-population for which the standard paradigm has yet to be rigorously constrained.Comment: 16 pages, 13 figures, 6 tables. Accepted for Publication in the Astronomical Journa

The optical variability of flat-spectrum radio quasars in the SDSS stripe 82 region

Context. Although a bluer-when-brighter trend is commonly observed in blazars, the opposite trend of redder-when-brighter has also been found in some blazars. Aims. We investigate the frequency of the redder-when-brighter trend in flat-spectrum radio quasars (FSRQs). Methods. We investigate the optical variability of 29 FSRQs in the SDSS Stripe 82 region using SDSS DR7 released multi-epoch data covering about nine years. We determined the spectral index by fitting a powerlaw to SDSS ugriz photometric data, and explored the relationship between the spectral index and source brightness. Results. For all FSRQs studied, we detect variations in r band flux of overall amplitude between 0.24 mag and 3.46 mag in different sources. Fourteen of 29 FSRQs display a bluer-when-brighter trend. However, only one source exhibits a redder-when-brighter trend, which implies that this behavior is rare in our FSRQ sample. In this source, the thermal emission from the accretion disk may be responsible for the redder-when-brighter trend.Comment: 9 pages, 7 figures, Astronomy and Astrophysics accepted, title revised, the version after language editin

What Causes Banking Crises? An Empirical Investigation for the World Economy

We add the Bernanke-Gertler-Gilchrist model to a world model consisting of the US, the Euro-zone and the Rest of the World in order to explore the causes of the banking crisis. We test the model against linear-detrended data and reestimate it by indirect inference; the resulting model passes the Wald test only on outputs in the two countries. We then extract the model's implied residuals on unfiltered data to replicate how the model predicts the crisis. Banking shocks worsen the crisis but 'traditional' shocks explain the bulk of the crisis; the non-stationarity of the productivity shocks plays a key role. Crises occur when there is a 'run' of bad shocks; based on this sample Great Recessions occur on average once every quarter century. Financial shocks on their own, even when extreme, do not cause crises - provided the government acts swiftly to counteract such a shock as happened in this sample