AC Impedance Analysis of the Al/ZnO/p-Si/Al Schottky Diode: C-V Plots and Extraction of Parameters

In this research, we report on the measurement of the capacitance-voltage (C-V) characteristics Al / ZnO / p-Si / Al Schottky diode at room temperature and in dark condition fabricated by spray pyrolysis process. C-V characteristics, within the range of frequencies 5 kHz-5 MHz, are investigated and microelectronic parameters are extracted. Donor density and diffusion potential vary with frequency from 15 to 28 1014 cm – 3, 0.21 to 0.45 V. Besides, the interface state density of Al /ZnO /pSi/Al Schottky is determined and found to be 1012 (eV cm²) – 1. Calculated at 1 MHz, the interfacial layer thickness and depletion layer width are of 760 Å and 0.28 m

AC Impedance Analysis of the Al/ZnO/p-Si/Al Schottky Diode: C-V Plots and Extraction of Parameters

In this research, we report on the measurement of the capacitance-voltage (C-V) characteristics Al / ZnO / p-Si / Al Schottky diode at room temperature and in dark condition fabricated by spray pyrolysis process. C-V characteristics, within the range of frequencies 5 kHz-5 MHz, are investigated and microelectronic parameters are extracted. Donor density and diffusion potential vary with frequency from 15 to 28 1014 cm – 3, 0.21 to 0.45 V. Besides, the interface state density of Al /ZnO /pSi/Al Schottky is determined and found to be 1012 (eV cm²) – 1. Calculated at 1 MHz, the interfacial layer thickness and depletion layer width are of 760 Å and 0.28 m

The novel transparent sputtered p-type CuO thin films and Ag/p-CuO/n-Si Schottky diode applications

In the current paper, the physical properties and microelectronic parameters of direct current (DC) sputtered p-type CuO film and diode have been investigated. The film of CuO as oxide and p-type semiconductor is grown onto glass and n-Si substrates by reactive DC sputtering at 250 °C. After deposition, a post-annealing procedure is applied at various temperatures in ambient. Through this research, several parameters are determined such structural, optical and electrical magnitudes. The thickness of CuO thin films goes from 122 to 254 nm. A (111)-oriented cubic crystal structure is revealed by X-ray analysis. The grain size is roughly depending on the post-annealing temperature, it increases with temperature within the 144–285 nm range. The transmittance reaches 80% simultaneously in visible and infrared bands. The optical band gap is varied between 1.99 and 2.52 eV as a result of annealing temperature while the resistivity and the charge carrier mobility decrease with an increase in temperature from 135 to 14 Ω cm and 0.92 to 0.06 cm2/Vs, respectively. The surface of samples is homogenous, bright dots are visible when temperature reaches the highest value. As a diode, Ag/CuO/n-Si exhibits a non-ideal behavior and the ideality factor is about 3.5. By Norde method, the barrier height and the series resistance are extracted and found to be 0.96 V and 86.6 Ω respectively

Electrical properties of safranine T/p-Si organic/inorganic semiconductor devices

We investigated the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of identically prepared safranine T/p-Si organic/inorganic Schottky devices (total 26 diodes) formed by evaporation of organic compound solution on p-Si semiconductor substrate. It was seen that the safranine T organic thin film on the p-Si substrate showed a good rectifying behavior. The barrier heights and ideality factors of all devices were extracted from the electrical characteristics. The mean barrier height and mean ideality factor from I-V measurements were calculated as 0.59±0.02 eV and 1.80±0.20, respectively. Also, the mean barrier height and mean acceptor doping concentration from C-V measurements were calculated as 0.67±0.10 eV and (6.96±0.37)×1014 cm-3, respectively. The discrepancy in the barrier height values obtained from I-V and C-V characteristics has been attributed to different nature of the measurements. The discrepancy between these values can also be due to the existence of the interfacial native oxide and the organic safranine T thin layer between the semiconductor substrate and top contact metal

Adjuvant use of antiprolactin, antiestrogen, and cytotoxic chemotherapy for breast cancer

Between September 1, 1985 and September 1, 1989, 110 premenopausal patients with estrogen-receptor-positive, stage-II breast cancer were randomized to receive, as adjuvant treatment following radiotherapy, either cyclophosphamide, methotrexate, and 5-fluorouracil (CMF) + tamoxifen (T) + bromocriptine (B) bases or CMF + T only. Preoperative serum prolactin (PRL) levels or PRL-receptor status of the tumor were not available, but before the commencement of adjuvant therapy serum PRL levels were measured in all patients and found to be high in 28. The local (LR) and distant (DM) metastasis-recurrence rates were lower in patients given bromocriptine (CMF + T + B) (LR, 5.7%; DM, 10.9%) than in those not given bromocriptine (CMF + T) (LR, 10.9%; DM, 27.2%); these findings, however, were not significant (P > 0.05). In the 28 hyperprolactinemic patients the metastasis-recurrence rate (17/28) was higher (P = 0.0001) and disease-free survival was shorter (P = 0.001) than in the 80 normoprolactinemic patients. It was also demonstrated that the disease-free survival was longer (P = 0.009) and the metastasis-recurrence rate was lower (6/12) in hyperprolactinemic patients who received bromocriptine (CMF + T + B) than in hyperprolactinemic patients who did not (CMF + T) (11/16), while there was no difference in metastasis-recurrence rates and disease-free survival between the two treatment groups among normoprolactinemic patients. These results encourage further investigation of the action of bromocriptine adjuvant base. Baseline serum PRL measurement and tumor PRL-receptor determination could be valuable tools to identify the appropriate cases for antiprolactinemic treatment. © 1994 Excerpta Medica, Inc. All rights reserved

Anquilose intencional dos caninos decíduos como reforço de ancoragem para a tração reversa da maxila: estudo cefalométrico prospectivo Intentional ankylosis of the deciduous canines to enhance maxillary protraction: a prospective cephalometric analysis

OBJETIVO: o presente trabalho de pesquisa analisou os efeitos da tração reversa da maxila associada à anquilose intencional dos caninos decíduos superiores, mediante o emprego da cefalometria. METODOLOGIA: o protocolo de tratamento incluiu: 1) anquilose intencional dos caninos decíduos superiores; 2) expansão rápida da maxila e 3) tração reversa da maxila, imediatamente após o término da fase ativa da expansão. A amostra foi composta de 18 crianças nos estágios de dentadura decídua e dentadura mista, com idade média inicial de 7 anos e 1 mês. O intervalo médio de tratamento com a tração reversa da maxila foi de 1 ano e 1 mês. As telerradiografias laterais foram obtidas na documentação inicial e após a correção da Classe III. RESULTADOS E CONCLUSÕES: os resultados demonstram que os ângulos representativos da convexidade facial, NAP e ANB, aumentaram de 0º para 6,6º e 3,5º, respectivamente. Isso significa dizer que a face transformou-se de reta ou côncava, peculiar na Classe III, para uma face convexa, característica de normalidade no estágio avaliado. Essa melhora na convexidade facial é atribuída ao avanço da maxila, registrado tanto na região alveolar (ângulo SNA e as distâncias Co-A e NPerp-A) como na região basal (ângulo SN.ENA). A maxila deslocou-se para frente, enquanto a redução do ângulo SNB de 80,56º para 79,61º demonstrou um retroposicionamento mandibular. Além da mudança no sentido sagital, houve rotação da mandíbula no sentido horário, com aumento dos ângulos SN.GoGn e SN.Gn. Somado aos efeitos ortopédicos, houve inclinação vestibular dos incisivos superiores.<br>AIM: the current article analyses the effects of maxillary protraction associated to the intentional ankylosis of the deciduous canines on the basis of cephalometric measurements. METHODS: the treatment protocol included: 1) intentional ankylosis of the upper deciduous canines; 2) rapid palatal expansion and 3) maxillary protraction performed immediately after the end of the expansion. The sample was comprised of 18 patients equally divided according to gender, in the primary and mixed dentition. The mean treatment time with maxillary protraction was 1 year. The lateral radiographs were taken in the beginning of the treatment and after correction of the Class III malocclusion. RESULTS AND CONCLUSION: the results show that the facial convexity angles - NAP and ANB - increased from 0º to 6.6º and 3.5º, respectively. This means that the patients’ profile changed from straight or concave, which is typical in the Class III malocclusion, to convex, which is typical in normal occlusion. Such an improvement in the facial convexity is due to the maxillary advancement, evidenced both in the dentoalveolar (SNA angle and Nperp-A measurement) and in the basal areas (SN.ANS angle). The maxilla was anteriorly displaced while the reduction of the SNB angle from 80.56º to 79.61º demonstrated a mandibular retropositioning. Besides the sagittal alterations, the mandible presented a clockwise rotation, with increase in the SN.GoGn and SN.Gn angles. Dental compensation was also noticed, represented by the buccal inclination of the upper incisors