The study of thermal silicon dioxide electrets formed by corona discharge and rapid-thermal annealing

A silicon dioxide (SiO₂) electret passivates the surface of crystalline silicon (Si) in two ways: (i) when annealed and hydrogenated, the SiO₂–Si interface has a low density of interface states, offering few energy levels through which electrons and holes can recombine; and (ii) the electret’s quasipermanent charge repels carriers of the same polarity, preventing most from reaching the SiO₂–Si interface and thereby limiting interface recombination. In this work, we engineer a charged thermal SiO₂electret on Si by depositing corona charge onto the surface of an oxide-coated Si wafer and subjecting the wafer to a rapid thermal anneal (RTA). We show that the surface-located corona charge is redistributed deeper into the oxide by the RTA. With 80 s of charging, and an RTA at 380 °C for 60 s, we measure an electretcharge density of 5 × 10¹² cm⁻², above which no further benefit to surface passivation is attained. The procedure leads to a surface recombination velocity of less than 20 cm/s on 1 Ω-cm n-type Si, which is commensurate with the best passivation schemes employed on high-efficiency Si solar cells. In this paper, we introduce the method of SiO₂electret formation, analyze the relationship between charge density and interface recombination, and assess the redistribution of charge by the RTA

Near-infrared free carrier absorption in heavily doped silicon

Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic devices such as solar cells. In this work, we fabricate 18 heavily doped regions by phosphorus and boron diffusion into planar polished silicon wafers; the simple sample structure facilitates accurate and precise measurement of the free carrier absorptance. We measure and model reflectance and transmittance dispersion to arrive at a parameterisation for the free carrier absorption coefficient that applies in the wavelength range between 1000 and 1500 nm, and the range of dopant densities between ∼10¹⁸ and 3 × 10²⁰ cm⁻³. Our measurements indicate that previously published parameterisations underestimate the free carrier absorptance in phosphorus diffusions. On the other hand, published parameterisations are generally consistent with our measurements and model for boron diffusions. Our new model is the first to be assigned uncertainty and is well-suited to routine device analysis

Discovery That Theonellasterol a Marine Sponge Sterol Is a Highly Selective FXR Antagonist That Protects against Liver Injury in Cholestasis

Background: The farnesoid-x-receptor (FXR) is a bile acid sensor expressed in the liver and gastrointestinal tract. Despite FXR ligands are under investigation for treatment of cholestasis, a biochemical condition occurring in a number of liver diseases for which available therapies are poorly effective, mice harboring a disrupted FXR are protected against liver injury caused by bile acid overload in rodent models of cholestasis. Theonellasterol is a 4-methylene-24-ethylsteroid isolated from the marine sponge Theonella swinhoei. Here, we have characterized the activity of this theonellasterol on FXR-regulated genes and biological functions. Principal Findings: Interrogation of HepG2 cells, a human hepatocyte cell line, by microarray analysis and transactivation assay shows that theonellasterol is a selective FXR antagonist, devoid of any agonistic or antagonistic activity on a number of human nuclear receptors including the vitamin D receptor, PPARs, PXR, LXRs, progesterone, estrogen, glucorticoid and thyroid receptors, among others. Exposure of HepG2 cells to theonellasterol antagonizes the effect of natural and synthetic FXR agonists on FXR-regulated genes, including SHP, OSTa, BSEP and MRP4. A proof-of-concept study carried out to investigate whether FXR antagonism rescues mice from liver injury caused by the ligation of the common bile duct, a model of obstructive cholestasis, demonstrated that theonellasterol attenuates injury caused by bile duct ligation as measured by assessing serum alanine aminostrasferase levels and extent of liver necrosis at histopathology. Analysis of genes involved in bile acid uptake and excretion by hepatocytes revealed that theonellasterol increases the liver expression of MRP4, a basolateral transporter that is negatively regulated by FXR. Administering bile duct ligated mice with an FXR agonist failed to rescue from liver injury and downregulated the expression of MRP4. Conclusions: FXR antagonism in vivo results in a positive modulation of MRP4 expression in the liver and is a feasible strategy to target obstructive cholestasis

The influence of orientation and morphology on the passivation of crystalline silicon surfaces by Al2O3

We compare the passivation provided by Al2O3 deposited on planar and , and textured , boron-diffused and undiffused crystalline silicon surfaces. The passivation of surfaces is found to be somewhat worse than that of surfaces for the as-deposited films, but improves to similar values after annealing. Higher recombination at textured surfaces compared to planar surfaces can be largely, though not entirely, attributed to the difference in surface area. The passivation of both as-deposited and annealed films is found to improve over time when stored under ambient conditions. This helps give context to the myriad of results reported on planar samples – we expect J0 values measured for Al2O3 layers on such surfaces to increase by a factor of ~2 to 3 on textured surfaces