3 research outputs found

    Disease monitoring by the tumour maskers Cyfra 21.1 and TPA in patients with non-small cell lung cancer

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    We evaluated the use of two tumour markers Cyfra 21.1 and tissue polypeptide antigen (TPA) for disease monitoring. Assessment of response to WHO criteria was compared to response assessment according to changes in the tumour marker levels. The criteria defined for marker response were a 65% decrease for a partial response and a 40% increase for progressive disease. When response evaluations with a positive lead time were included, 72% of 115 evaluations for Cyfra 21.1 and 59% of 107 evaluations for TPA yielded the same result. Most discordant evaluations were caused by those evaluations whereby the patient achieved a partial response according to the WHO criteria and had normalisation of the marker. Less cases with a positive lead time, more negative lead times, and more patients with progressive disease without an increase of the marker were seen with TPA compared to Cyfra 21.1. In conclusion, Cyfra 21.1 follows the changes in the tumour load better than TPA. Rising levels of both markers nearly always indicate disease progression, and such knowledge easily obtained may prevent the continuation of ineffective treatment

    Anodic oxidations Excellent process durability and surface passivation for high efficiency silicon solar cells

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    We investigate the versatility of anodically grown silicon dioxide (SiO2) films in the context of process durability and exceptional surface passivation for high efficiency (>23%) silicon solar cell architectures. We show that a room temperature anodic oxidation can achieve a thickness of ~70 nm within ~30 min, comparable to the growth rate of a thermal oxide at 1000 °C. We demonstrate that anodic SiO2 films can mask against wet chemical silicon etching and high temperature phosphorus diffusions, thereby permitting a low thermal budget method to form patterned structures. We investigate the saturation current density J0 of anodic SiO2/silicon nitride stacks on phosphorus diffused and undiffused silicon and show that a J0 of −2 can be achieved in both cases. Finally, to showcase the anodic SiO2 films on a device level, we employed the anodic SiO2/silicon nitride stack to passivate the rear surface of an interdigitated back contact solar cell, achieving an efficiency of 23.8%
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