Visualization of defects in single-crystal and thin-film PdCoO2 using aberration-corrected scanning transmission electron microscopy

Funding: This work was primarily supported by the U.S. Department of Energy, Office of Basic Sciences, Division of Materials Sciences and Engineering, under Award No. DE-SC0002334.Single-crystal delafossite PdCoO2 is known to have an extremely low intrinsic impurity concentration of ~0.001%, demonstrating extraordinarily high conductivity with a mean free path of ~20 microns at low temperatures. However, when grown as thin films, the resistivity at room temperature increases by a factor of 3 to 80 times, depending on the film thickness. Using scanning transmission electron microscopy, we identify different classes of defects for the single crystal vs epitaxial thin film. The dominant defect for single-crystal PdCoO2 is found to be ribbon-like defects. For the thin films, we identify different types of defects arising in epitaxial thin films mainly due to substrate termination that disrupt the lateral connectivity of the conducting planes. Our results are consistent with the high conductivity of single crystals and increased electrical resistivity of the thin films compared to that of single crystals, suggesting that selecting a proper substrate, improving surface quality, and reducing the step density are the keys to enhance the film quality for utilizing PdCoO2 as a platform for future applications.PostprintPeer reviewe

Wheat Yield Trend and Soil Fertility Status in Long Term Rice-Rice-Wheat Cropping System

A long-term soil fertility experiment under rice-rice-wheat system was performed to evaluate the long term effects of inorganic fertilizer and manure applications on soil properties and grain yield of wheat. The experiment began since 1978 was laid out in randomized complete block design with 9 treatments replicated 3 times. From 1990 onwards, periodic modifications have been made in all the treatments splitting the plots in two equal halves of 4 x 3 m2 leaving one half as original. In the original treatments, recent data revealed that the use of Farm Yard Manure (FYM) @10 t ha-1 gave significantly (P≤0.05) higher yield of 2.3 t ha-1 in wheat, whereas control plot gave the lowest grain yield of 277 kg ha-1. Similarly, in the modified treatments, the use of FYM @10 t ha-1 along with inorganic Nitrogen (N) and Potassium oxide (K2O) @ 50 kg ha-1 produced significantly (P≤0.05) the highest yield of 2.4 t/ha in wheat. The control plot with an indigenous nutrient supply only produced wheat yield of 277 kg ha-1 after 35th year completion of rice-rice-wheat system. A sharp decline in wheat yields was noted in minus N, phosphorus (P), Potassium (K) treatments during recent years. Yields were consistently higher in the N:P2O5:K2O and FYM treatments than in treatments, where one or more nutrients were lacking. The application of P2O5 and K2O caused a partial recovery of yield in P and K deficient plots. There was significant (P≤0.05) effect of use of chemical fertilizers and manure on soil properties. The soil analysis data showed an improvement in soil pH (7.8), soil organic matter (4.1%), total N content (0.16%), available P (503.5 kg P2O5 ha-1) and exchangeable K (137.5 kg K2O ha-1) in FYM applied treatments over all other treatments. The findings showed that the productivity of the wheat can be increased and sustained by improving nutrient through the integrated use of organic and inorganic manures in long term.Journal of Nepal Agricultural Research Council Vol.1 2015 pp.21-2

Synergistic High Charge-Storage Capacity for Multi-level Flexible Organic Flash Memory

Electret and organic floating-gate memories are next-generation flash storage mediums for printed organic complementary circuits. While each flash memory can be easily fabricated using solution processes on flexible plastic substrates, promising their potential for on-chip memory organization is limited by unreliable bit operation and high write loads. We here report that new architecture could improve the overall performance of organic memory, and especially meet high storage for multi-level operation. Our concept depends on synergistic effect of electrical characterization in combination with a polymer electret (poly(2-vinyl naphthalene) (PVN)) and metal nanoparticles (Copper). It is distinguished from mostly organic nano-floating-gate memories by using the electret dielectric instead of general tunneling dielectric for additional charge storage. The uniform stacking of organic layers including various dielectrics and poly(3-hexylthiophene) (P3HT) as an organic semiconductor, followed by thin-film coating using orthogonal solvents, greatly improve device precision despite easy and fast manufacture. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as high-k blocking dielectric also allows reduction of programming voltage. The reported synergistic organic memory devices represent low power consumption, high cycle endurance, high thermal stability and suitable retention time, compared to electret and organic nano-floating-gate memory devices

Field-induced instability of the quantum-spin-liquid ground state in the Jeff=12J_{\rm eff}=\frac{1}{2} triangular-lattice compound NaYbO2_2

Polycrystalline samples of NaYbO$_2$ are investigated by bulk magnetization and specific-heat measurements, as well as by nuclear magnetic resonance (NMR) and electron spin resonance (ESR) as local probes. No signatures of long-range magnetic order are found down to 0.3~K, evidencing a highly frustrated spin-liquid-like ground state in zero field. Above 2\,T, signatures of magnetic order are observed in thermodynamic measurements, suggesting the possibility of a field-induced quantum phase transition. The $^{23}$Na NMR relaxation rates reveal the absence of magnetic order and persistent fluctuations down to 0.3~K at very low fields and confirm the bulk magnetic order above 2~T. The $H$-$T$ phase diagram is obtained and discussed along with the existing theoretical concepts for layered spin-$\frac{1}{2}$ triangular-lattice antiferromagnetsComment: 4 figure

Evidence of metallic clustering in annealed Ga1-xMnxAs from atypical scaling behavior of the anomalous Hall coefficient

We report on the anomalous Hall coefficient and longitudinal resistivity scaling relationships on a series of annealed Ga1-xMnxAs epilayers (x~0.055). As-grown samples exhibit scaling parameter n of ~ 1. Near the optimal annealing temperature, we find n ~ 2 to be consistent with recent theories on the intrinsic origins of anomalous Hall Effect in Ga1-xMnxAs. For annealing temperatures far above the optimum, we note n > 3, similar behavior to certain inhomogeneous systems. This observation of atypical behavior agrees well with characteristic features attributable to spherical resonance from metallic inclusions from optical spectroscopy measurements.Comment: 3 pages, 3 figure

Interplay between carrier and impurity concentrations in annealed Ga1−x_{1-x}Mnx_{x}As intrinsic anomalous Hall Effect

Investigating the scaling behavior of annealed Ga$_{1-x}$Mn$_{x}$As anomalous Hall coefficients, we note a universal crossover regime where the scaling behavior changes from quadratic to linear, attributed to the anomalous Hall Effect intrinsic and extrinsic origins, respectively. Furthermore, measured anomalous Hall conductivities when properly scaled by carrier concentration remain constant, equal to theoretically predicated values, spanning nearly a decade in conductivity as well as over 100 K in T$_{C}$. Both the qualitative and quantitative agreement confirms the validity of new equations of motion including the Berry phase contributions as well as tunablility of the intrinsic anomalous Hall Effect.Comment: 4 pages, 5 figure

Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C

Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted under the same conditions, transport and magnetic properties show marked differences. Transport measurements show anomalies, consistent with observed magnetic properties and with epi- LT-(Ga,Mn)As, as well as the extraordinary Hall Effect up to the observed magnetic ordering temperature (T_C). Mn ion-implanted p+GaAs:C with as-grown carrier concentrations > 10^20 cm^-3 show remanent magnetization up to 280 K