“I told you this last time, right?”: Re-visiting narratives of STEM education

The stories we tell ourselves and others - both as individuals and as a community - reflect how we make sense of our lives. Our work using narrative methods has explored how university graduates make sense of their learning experiences and how these fit within their wider learning trajectories. In this paper, we discuss work we conducted with a group of a dozen students who, when first interviewed, were in the second half of their undergraduate education at Olin College of Engineering. All twelve participants were re-interviewed four years later, after they had graduated, using the same narrative protocol that asked them to describe their learning 'life' as if it was a book, and to identify and describe individual chapters of their experience. The pairs of interviews were analysed with respect to their form and their content. In regard to form, a classification of these repeated stories is derived. Thematic analysis of the content examines a) how students come to study and practice computing and b) the continuing, and changing influence of a university education over time, as students construct an individual sense of coherence

Analysis of electroluminescence spectra of silicon and gallium arsenide p-n junction in avalanche breakdown

International audienceWe present a generalized study of light emission from reverse biased p–n junctions under avalanche breakdown conditions. A model is developed based on direct and indirect interband processes including self-absorption to describe measured electroluminescence spectra. This model was used to analyze experimental data for silicon ~Si! and gallium arsenide p–n junctions and can be extended to several types of semiconductors regardless of their band gaps. This model can be used as a noninvasive technique for the determination of the junction depth. It has also been used to explain the observed changes of the Si p–n junction electroluminescence spectra after fast neutron irradiation. In particular, it is demonstrated that the neutron irradiation affects both the semiconductor and the overlying passivation oxide layer