56 research outputs found

    Boundary Scattering in Ballistic Graphene

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    We report magnetotransport measurements in ballistic graphene/hexagonal boron nitride mesoscopic wires where the charge carrier mean free path is comparable to wire width WW. Magnetoresistance curves show characteristic peak structures where the peak field scales with the ratio of cyclotron radius RcR_\textrm{c} and wire width WW as W/Rc=0.9±0.1W/R_\textrm{c} = 0.9 \pm 0.1, due to diffusive boundary scattering. The obtained proportionality constant between RcR_\textrm{c} and WW differs from that of a classical semiconductor 2D electron system where W/Rc=0.55W/R_\textrm{c} = 0.55.Comment: 14 pages, 4 figure

    A memory-based programmable logic device using look-up table cascade with synchronous static random access memories

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    A large-scale memory-technology-based programmable logic device (PLD) using LUT (Look-Up Table) cascade is developed in 0.35um Standard CMOS logic process. Eight 64K-bit synchronous SRAMs are connected to form an LUT cascade with a few additional circuits. The features of the LUT cascade include: 1) flexible cascade connection structure, 2) multi-phase pseudo-asynchronous operations with synchronous SRAM cores, 3) LUT-bypass redundancy. This chip operates at 33MHz in 8-LUT cascades with 122mW. Benchmark results show that it achieves a comparable performance to FPGAs

    Programmable logic device with an 8-stage cascade of 64K-bit asynchronous SRAMs

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    The first implementation of a new programmable logic device using LUT(Look-Up Table) cascade architecture is developed in 0.35um CMOS logic process. Eight 64Kb asynchronous SRAMs are simply connected to form an LUT cascade with a few additional circuits. Benchmark results show that it has a competitive performance to FPGAs.IEEE Symposium on Low-Power and High-Speed Chips (Cool Chips VIII), April 22-25, 2005, Yokohama, Japa

    A memory-based programmable logic device using a look-up table cascade with synchronous SRAMs

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    2005 International Conference on Solid State Devices and Materials (SSDM 2005), September13-15, 2005, Kobe, Hyogo, Japa
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