116 research outputs found
Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors
We investigate transport in phosphorus-doped buried-channel
metal-oxide-semiconductor field-effect transistors at temperatures between 10
and 295 K. In a range of doping concentration between around 2.1 and 8.7 x 1017
cm-3, we find that a clear peak emerges in the conductance versus gate-voltage
curves at low temperature. In addition, temperature dependence measurements
reveal that the conductance obeys a variable-range-hopping law up to an
unexpectedly high temperature of over 100 K. The symmetric dual-gate
configuration of the silicon-on-insulator we use allows us to fully
characterize the vertical-bias dependence of the conductance. Comparison to
computer simulation of the phosphorus impurity band depth-profile reveals how
the spatial variation of the impurity-band energy determines the hopping
conduction in transistor structures. We conclude that the emergence of the
conductance peak and the high-temperature variable-range hopping originate from
the band bending and its change by the gate bias. Moreover, the peak structure
is found to be strongly related to the density of states (DOS) of the
phosphorus impurity band, suggesting the possibility of performing a novel
spectroscopy for the DOS of phosphorus, the dopant of paramount importance in
Si technology, through transport experiments.Comment: 9 figure
Development of an Autonomous Vehicle Equipped with a Broadband Ultrasonic Sensor (Thermophone) for Engineering Verification of the Bats Jamming Avoidance Behavior
The 11th International Symposium on Adaptive Motion of Animals and Machines. Kobe University, Japan. 2023-06-06/09. Adaptive Motion of Animals and Machines Organizing Committee.Poster Session P3
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